| Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs H Zhang, L Yuan, X Tang, J Hu, J Sun, Y Zhang, Y Zhang, R Jia IEEE Transactions on Power Electronics 35 (5), 5157-5179, 2019 | 153 | 2019 |
| Honeycomb-inspired design of ultrafine SnO2@ C nanospheres embedded in carbon film as anode materials for high performance lithium-and sodium-ion battery X Ao, J Jiang, Y Ruan, Z Li, Y Zhang, J Sun, C Wang Journal of Power Sources 359, 340-348, 2017 | 136 | 2017 |
| Local chemical states and thermal stabilities of nitrogen dopants in ZnO film studied by temperature-dependent x-ray photoelectron spectroscopy XH Li, HY Xu, XT Zhang, YC Liu, JW Sun, YM Lu Applied Physics Letters 95 (19), 2009 | 93 | 2009 |
| Self-powered MSM deep-ultraviolet β-Ga2O3 photodetector realized by an asymmetrical pair of Schottky contacts L Dong, J Yu, R Jia, J Hu, Y Zhang, J Sun Optical Materials Express 9 (3), 1191-1199, 2019 | 85 | 2019 |
| Advances in wide bandgap SiC for optoelectronics H Ou, Y Ou, A Argyraki, S Schimmel, M Kaiser, P Wellmann, ... The European Physical Journal B 87, 1-16, 2014 | 85 | 2014 |
| Nitrogen-related recombination mechanisms in p-type ZnO films grown by plasma-assisted molecular beam epitaxy JW Sun, YM Lu, YC Liu, DZ Shen, ZZ Zhang, B Yao, BH Li, JY Zhang, ... Journal of Applied Physics 102 (4), 2007 | 83 | 2007 |
| A review of recent progress on silicon carbide for photoelectrochemical water splitting J Jian, J Sun Solar RRL 4 (7), 2000111, 2020 | 72 | 2020 |
| Cubic silicon carbide as a potential photovoltaic material M Syväjärvi, Q Ma, V Jokubavicius, A Galeckas, J Sun, X Liu, M Jansson, ... Solar Energy Materials and Solar Cells 145, 104-108, 2016 | 61 | 2016 |
| A nanostructured NiO/cubic SiC p–n heterojunction photoanode for enhanced solar water splitting J Jian, Y Shi, S Ekeroth, J Keraudy, M Syväjärvi, R Yakimova, ... Journal of Materials Chemistry A 7 (9), 4721-4728, 2019 | 58 | 2019 |
| Single domain 3C-SiC growth on off-oriented 4H-SiC substrates V Jokubavicius, GR Yazdi, R Liljedahl, IG Ivanov, J Sun, X Liu, P Schuh, ... Crystal Growth & Design 15 (6), 2940-2947, 2015 | 54 | 2015 |
| Photocatalytic removal of NO by intercalated carbon nitride: The effect of group IIA element ions M Zhou, G Dong, J Ma, F Dong, C Wang, J Sun Applied Catalysis B: Environmental 273, 119007, 2020 | 53 | 2020 |
| 15nm-WFINhigh-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process J Mitard, L Witters, R Loo, SH Lee, JW Sun, J Franco, LÅ Ragnarsson, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 51 | 2014 |
| Cu2O/ZnO p–n Junction Decorated with NiOx as a Protective Layer and Cocatalyst for Enhanced Photoelectrochemical Water Splitting J Jian, R Kumar, J Sun ACS Applied Energy Materials 3 (11), 10408-10414, 2020 | 50 | 2020 |
| Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap N Collaert, A Alian, H Arimura, G Boccardi, G Eneman, J Franco, T Ivanov, ... Microelectronic Engineering 132, 218-225, 2015 | 50 | 2015 |
| Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect L Witters, J Mitard, R Loo, S Demuynck, SA Chew, T Schram, Z Tao, ... 2015 Symposium on VLSI Technology (VLSI Technology), T56-T57, 2015 | 49 | 2015 |
| Excitonic electroluminescence from ZnO-based heterojunction light emitting diodes JW Sun, YM Lu, YC Liu, DZ Shen, ZZ Zhang, BH Li, JY Zhang, B Yao, ... Journal of Physics D: Applied Physics 41 (15), 155103, 2008 | 49 | 2008 |
| Fluorescent SiC as a new material for white LEDs M Syväjärvi, J Müller, JW Sun, V Grivickas, Y Ou, V Jokubavicius, P Hens, ... Physica Scripta 2012 (T148), 014002, 2012 | 48 | 2012 |
| Enhancing Photocatalytic Activity of NO Removal through an In Situ Control of Oxygen Vacancies in Growth of TiO2 X Shen, G Dong, L Wang, L Ye, J Sun Advanced Materials Interfaces 6 (19), 1901032, 2019 | 45 | 2019 |
| Considerably long carrier lifetimes in high-quality 3C-SiC (111) JW Sun, IG Ivanov, R Liljedahl, R Yakimova, M Syväjärvi Applied Physics Letters 100 (25), 2012 | 42 | 2012 |
| Atomic-scale tuning of graphene/cubic SiC Schottky junction for stable low-bias photoelectrochemical solar-to-fuel conversion H Li, Y Shi, H Shang, W Wang, J Lu, AA Zakharov, L Hultman, ... ACS nano 14 (4), 4905-4915, 2020 | 39 | 2020 |
