| Direct observation of a two-dimensional hole gas at oxide interfaces H Lee, N Campbell, J Lee, TJ Asel, TR Paudel, H Zhou, JW Lee, ... Nature materials 17 (3), 231-236, 2018 | 206 | 2018 |
| Optical signatures of deep level defects in Ga2O3 H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ... Applied Physics Letters 112 (24), 2018 | 162 | 2018 |
| Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ... Semiconductor Science and Technology 35 (1), 013002, 2019 | 141 | 2019 |
| Tailoring the electronic structure of covalently functionalized germanane via the interplay of ligand strain and electronegativity S Jiang, K Krymowski, T Asel, MQ Arguilla, ND Cultrara, E Yanchenko, ... Chemistry of Materials 28 (21), 8071-8077, 2016 | 87 | 2016 |
| Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ... IEEE Electron Device Letters 41 (7), 989-992, 2020 | 45 | 2020 |
| Toward high voltage radio frequency devices in β-Ga2O3 N Moser, K Liddy, A Islam, N Miller, K Leedy, T Asel, S Mou, A Green, ... Applied Physics Letters 117 (24), 2020 | 39 | 2020 |
| γ-phase inclusions as common structural defects in alloyed β-(AlxGa1− x) 2O3 and doped β-Ga2O3 films CS Chang, N Tanen, V Protasenko, TJ Asel, S Mou, HG Xing, D Jena, ... APL Materials 9 (5), 2021 | 36 | 2021 |
| Native point defect formation in flash sintered ZnO studied by depth-resolved cathodoluminescence spectroscopy H Gao, TJ Asel, JW Cox, Y Zhang, J Luo, LJ Brillson Journal of Applied Physics 120 (10), 2016 | 34 | 2016 |
| Controlled Si doping of β-Ga2O3 by molecular beam epitaxy JP McCandless, V Protasenko, BW Morell, E Steinbrunner, AT Neal, ... Applied Physics Letters 121 (7), 2022 | 32 | 2022 |
| Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy TJ Asel, E Steinbrunner, J Hendricks, AT Neal, S Mou Journal of Vacuum Science & Technology A 38 (4), 2020 | 29 | 2020 |
| Identification of a functional point defect in D Lee, H Wang, BA Noesges, TJ Asel, J Pan, JW Lee, Q Yan, LJ Brillson, ... Physical Review Materials 2 (6), 060403, 2018 | 23 | 2018 |
| Near-nanoscale-resolved energy band structure of LaNiO3/La2/3Sr1/3MnO3/SrTiO3 heterostructures and their interfaces TJ Asel, H Gao, TJ Heinl, D Adkins, PM Woodward, J Hoffman, ... Journal of Vacuum Science & Technology B 33 (4), 2015 | 16 | 2015 |
| Uniform large-area growth of nanotemplated high-quality monolayer MoS2 JR Young, M Chilcote, M Barone, J Xu, J Katoch, YK Luo, S Mueller, ... Applied Physics Letters 110 (26), 2017 | 13 | 2017 |
| Influence of surface chemistry on water absorption in functionalized germanane TJ Asel, WLB Huey, B Noesges, E Molotokaite, SC Chien, Y Wang, ... Chemistry of Materials 32 (4), 1537-1544, 2020 | 11 | 2020 |
| High conductivity β-Ga2O3 formed by hot Si ion implantation A Sardar, T Isaacs-Smith, J Lawson, T Asel, RB Comes, JN Merrett, ... Applied Physics Letters 121 (26), 2022 | 10 | 2022 |
| Identification of Ge vacancies as electronic defects in methyl-and hydrogen-terminated germanane TJ Asel, E Yanchenko, X Yang, S Jiang, K Krymowski, Y Wang, A Trout, ... Applied Physics Letters 113 (6), 2018 | 10 | 2018 |
| Surface relaxation and rumpling of Sn-doped A Pancotti, TC Back, W Hamouda, M Lachheb, C Lubin, P Soukiassian, ... Physical Review B 102 (24), 245306, 2020 | 9 | 2020 |
| Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba, Sr) TiO3 ZQ Zeng, A Podpirka, SW Kirchoefer, TJ Asel, LJ Brillson Applied Physics Letters 106 (18), 2015 | 7 | 2015 |
| Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time KR Gann, N Pieczulewski, CA Gorsak, K Heinselman, TJ Asel, ... Journal of Applied Physics 135 (1), 2024 | 6 | 2024 |
| Influence of nitride buffer layers on superconducting properties of niobium nitride JH Goldsmith, R Gibson, T Cooper, TJ Asel, S Mou, DC Look, JS Derov, ... Journal of Vacuum Science & Technology A 36 (6), 2018 | 5 | 2018 |
