| High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping Y Chen, H Wu, E Han, G Yue, Z Chen, Z Wu, G Wang, H Jiang Applied physics letters 106 (16), 2015 | 116 | 2015 |
| High-quality AlN film grown on sputtered AlN/sapphire via growth-mode modification C He, W Zhao, H Wu, S Zhang, K Zhang, L He, N Liu, Z Chen, B Shen Crystal Growth & Design 18 (11), 6816-6823, 2018 | 54 | 2018 |
| All AlGaN epitaxial structure solar-blind avalanche photodiodes with high efficiency and high gain H Wu, W Wu, H Zhang, Y Chen, Z Wu, G Wang, H Jiang Applied Physics Express 9 (5), 052103, 2016 | 46 | 2016 |
| High-quality GaN epilayers achieved by facet-controlled epitaxial lateral overgrowth on sputtered AlN/PSS templates C He, W Zhao, K Zhang, L He, H Wu, N Liu, S Zhang, X Liu, Z Chen ACS applied materials & interfaces 9 (49), 43386-43392, 2017 | 39 | 2017 |
| Performance enhancement of AlGaN-based 365 nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier L He, W Zhao, K Zhang, C He, H Wu, N Liu, W Song, Z Chen, S Li Optics Letters 43 (3), 515-518, 2018 | 34 | 2018 |
| Enhanced Mg doping efficiency in p-type GaN by indium-surfactant-assisted delta doping method Y Chen, H Wu, G Yue, Z Chen, Z Zheng, Z Wu, G Wang, H Jiang Applied Physics Express 6 (4), 041001, 2013 | 34 | 2013 |
| Demonstration of solar-blind AlxGa1− xN-based heterojunction phototransistors L Zhang, S Tang, C Liu, B Li, H Wu, H Wang, Z Wu, H Jiang Applied Physics Letters 107 (23), 2015 | 27 | 2015 |
| Recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate H Wu, K Zhang, C He, L He, Q Wang, W Zhao, Z Chen Crystals 12 (1), 38, 2021 | 25 | 2021 |
| Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a AlxGa1-xN carrier reservoir layer L He, W Zhao, K Zhang, C He, H Wu, X Liu, X Luo, S Li, Z Chen Applied Physics Express 12 (6), 062013, 2019 | 24 | 2019 |
| Improved carrier injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple-quantum-well structure and hole-blocking barriers Z Zheng, Z Chen, Y Chen, H Wu, S Huang, B Fan, Z Wu, G Wang, H Jiang Applied Physics Letters 102 (24), 2013 | 24 | 2013 |
| Efficient carrier transport for 368 nm ultraviolet LEDs with a p-AlInGaN/AlGaN short-period superlattice electron blocking layer L He, K Zhang, H Wu, C He, W Zhao, Q Wang, S Li, Z Chen Journal of Materials Chemistry C 9 (25), 7893-7899, 2021 | 18 | 2021 |
| GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure L Zhang, S Tang, H Wu, H Wang, Z Wu, H Jiang physica status solidi (a) 214 (8), 1600821, 2017 | 14 | 2017 |
| Low-defect-density aluminum nitride (AlN) thin films realized by zigzag macrostep-induced dislocation redirection C He, H Wu, C Jia, K Zhang, L He, Q Wang, J Li, N Liu, S Zhang, W Zhao, ... Crystal Growth & Design 21 (6), 3394-3400, 2021 | 12 | 2021 |
| Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids C He, W Zhao, H Wu, N Liu, S Zhang, J Li, C Jia, K Zhang, L He, Z Chen, ... Journal of Physics D: Applied Physics 53 (40), 405303, 2020 | 12 | 2020 |
| Analysis on the enhanced hole concentration in p‐type GaN grown by indium‐surfactant‐assisted Mg delta doping Y Chen, H Wu, G Yue, Z Chen, Z Zheng, Z Wu, G Wang, H Jiang physica status solidi (b) 252 (5), 1109-1115, 2015 | 11 | 2015 |
| Improved performance of ultraviolet AlGaN/GaN npn HPTs by a thin lightly-doped n-AlGaN insertion layer S Tang, L Zhang, H Wu, C Liu, H Jiang AIP Advances 9 (12), 2019 | 10 | 2019 |
| Growth of high quality AlN/sapphire templates with high growth rate using a medium-temperature layer H Wu, W Zhao, C He, K Zhang, L He, Z Chen Superlattices and Microstructures 125, 343-347, 2019 | 10 | 2019 |
| Threading edge dislocation arrays in epitaxial GaN: Formation, model and thermodynamics ZM Chen, ZY Zheng, YD Chen, HL Wu, CS Tong, G Wang, ZS Wu, ... Journal of crystal growth 387, 48-51, 2014 | 9 | 2014 |
| Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage H Wu, H Wang, Y Chen, L Zhang, Z Chen, Z Wu, G Wang, H Jiang Journal of Crystal Growth 490, 56-60, 2018 | 8 | 2018 |
| Modulating carrier distribution for efficient algan-based deep ultraviolet light-emitting diodes by introducing an asymmetric quantum well Q Wang, K Zhang, C Li, X Liang, H Wu, L He, Q Li, D Lin, W Zhao, Z Chen, ... Journal of Electronic Materials 50, 2643-2648, 2021 | 6 | 2021 |
Chenguang He (何晨光)Guangdong Institute of Semiconductor Industrial Technology (Engineer); Peking University (Ph. D)在 pku.edu.cn 的电子邮件经过验证
