High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range NN Ledentsov, AR Kovsh, AE Zhukov, NA Maleev, SS Mikhrin, ... Electronics Letters 39 (15), 1126-1128, 2003 | 213 | 2003 |
Highly efficient injection microdisk lasers based on quantum well-dots E Moiseev, N Kryzhanovskaya, M Maximov, F Zubov, A Nadtochiy, ... Optics Letters 43 (19), 4554-4557, 2018 | 76 | 2018 |
InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy VM Ustinov, AY Egorov, VA Odnoblyudov, NV Kryzhanovskaya, ... Journal of crystal growth 251 (1-4), 388-391, 2003 | 61 | 2003 |
Light emitting devices based on quantum well-dots MV Maximov, AM Nadtochiy, SA Mintairov, NA Kalyuzhnyy, ... Applied Sciences 10 (3), 1038, 2020 | 59 | 2020 |
A 1.33 µm InAs/GaAs quantum dot laser with a 46 cm− 1 modal gain MV Maximov, VM Ustinov, AE Zhukov, NV Kryzhanovskaya, AS Payusov, ... Semiconductor science and technology 23 (10), 105004, 2008 | 53 | 2008 |
Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3 μm N Kryzhanovskaya, E Moiseev, Y Polubavkina, M Maximov, M Kulagina, ... Optics Letters 42 (17), 3319-3322, 2017 | 50 | 2017 |
Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots MV Maximov, NV Kryzhanovskaya, AM Nadtochiy, EI Moiseev, II Shostak, ... Nanoscale research letters 9, 1-7, 2014 | 50 | 2014 |
Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers AE Zhukov, NV Kryzhanovskaya, FI Zubov, YM Shernyakov, MV Maximov, ... Applied Physics Letters 100 (2), 2012 | 48 | 2012 |
Metamorphic 1.5 µm-range quantum dot lasers on a GaAs substrate LY Karachinsky, T Kettler, II Novikov, YM Shernyakov, NY Gordeev, ... Semiconductor science and technology 21 (5), 691, 2006 | 47 | 2006 |
Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates ES Semenova, AE Zhukov, SS Mikhrin, AY Egorov, VA Odnoblyudov, ... Nanotechnology 15 (4), S283, 2004 | 47 | 2004 |
Continuous‐wave lasing at 100° C in 1.3 µm quantum dot microdisk diode laser NV Kryzhanovskaya, EI Moiseev, YV Kudashova, FI Zubov, AA Lipovskii, ... Electronics Letters 51 (17), 1354-1355, 2015 | 46 | 2015 |
Light outcoupling from quantum dot-based microdisk laser via plasmonic nanoantenna EI Moiseev, N Kryzhanovskaya, YS Polubavkina, MV Maximov, ... Acs Photonics 4 (2), 275-281, 2017 | 45 | 2017 |
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice WV Lundin, AE Nikolaev, AV Sakharov, EE Zavarin, GA Valkovskiy, ... Journal of Crystal Growth 315 (1), 267-271, 2011 | 44 | 2011 |
Growth and characterization of GaP/GaPAs nanowire heterostructures with controllable composition AD Bolshakov, VV Fedorov, NV Sibirev, MV Fetisova, EI Moiseev, ... physica status solidi (RRL)–Rapid Research Letters 13 (11), 1900350, 2019 | 42 | 2019 |
High-power singlemode CW operation of 1.5 µm-range quantum dot GaAs-based laser LY Karachinsky, T Kettler, NY Gordeev, II Novikov, MV Maximov, ... Electronics Letters 41 (8), 1, 2005 | 41 | 2005 |
Bandedge-engineered quantum well laser LV Asryan, NV Kryzhanovskaya, MV Maximov, AY Egorov, AE Zhukov Semiconductor science and technology 26 (5), 055025, 2011 | 38 | 2011 |
Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE AE Zhukov, AR Kovsh, SS Mikhrin, ES Semenova, NA Maleev, ... Semiconductors 37, 1119-1122, 2003 | 37 | 2003 |
High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates MV Maksimov, YM Shernyakov, NV Kryzhanovskaya, AG Gladyshev, ... Semiconductors 38, 732-735, 2004 | 36 | 2004 |
High speed data transmission using directly modulated microdisk lasers based on InGaAs/GaAs quantum well-dots F Zubov, M Maximov, N Kryzhanovskaya, E Moiseev, M Muretova, ... Optics Letters 44 (22), 5442-5445, 2019 | 35 | 2019 |
Room temperature lasing in 1-μm microdisk quantum dot lasers NV Kryzhanovskaya, AE Zhukov, MV Maximov, EI Moiseev, II Shostak, ... IEEE Journal of Selected Topics in Quantum Electronics 21 (6), 709-713, 2015 | 33 | 2015 |