Quantum dot nanostructures and molecular beam epitaxy S Franchi, G Trevisi, L Seravalli, P Frigeri Progress in Crystal Growth and Characterization of Materials 47 (2-3), 166-195, 2003 | 124 | 2003 |
Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates L Seravalli, G Trevisi, P Frigeri, D Rivas, G Munoz-Matutano, I Suárez, ... Applied Physics Letters 98 (17), 2011 | 65 | 2011 |
1.59 μm room temperature emission from metamorphic InAs∕ InGaAs quantum dots grown on GaAs substrates L Seravalli, P Frigeri, G Trevisi, S Franchi Applied Physics Letters 92 (21), 2008 | 63 | 2008 |
Molecular beam epitaxy: an overview P Frigeri, L Seravalli, G Trevisi, S Franchi Elsevier, 2016 | 49 | 2016 |
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures L Seravalli, G Trevisi, P Frigeri, S Franchi, M Geddo, G Guizzetti Nanotechnology 20 (27), 275703, 2009 | 48 | 2009 |
Effects of the quantum dot ripening in high-coverage InAs∕ GaAs nanostructures P Frigeri, L Nasi, M Prezioso, L Seravalli, G Trevisi, E Gombia, R Mosca, ... Journal of Applied Physics 102 (8), 2007 | 47 | 2007 |
Full Dynamic Control of In-plane Elastic Stress Tensor in Nanomembranes J Martín-Sánchez, R Trotta, G Piredda, C Schimpf, G Trevisi, L Seravalli, ... arXiv preprint arXiv:1511.08192, 2015 | 46 | 2015 |
Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping J Gomis-Bresco, G Muñoz-Matutano, J Martínez-Pastor, B Alén, ... New Journal of physics 13 (2), 023022, 2011 | 44 | 2011 |
Metamorphic quantum dots: quite different nanostructures L Seravalli, P Frigeri, L Nasi, G Trevisi, C Bocchi Journal of Applied Physics 108 (6), 2010 | 41 | 2010 |
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs V Bellani, C Bocchi, T Ciabattoni, S Franchi, P Frigeri, P Galinetto, ... The European Physical Journal B 56, 217-222, 2007 | 39 | 2007 |
Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 μm: effects of InGaAs capping L Seravalli, C Bocchi, G Trevisi, P Frigeri Journal of Applied Physics 108 (11), 2010 | 38 | 2010 |
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer D Colombo, S Sanguinetti, E Grilli, M Guzzi, L Martinelli, M Gurioli, ... Journal of applied physics 94 (10), 6513-6517, 2003 | 36 | 2003 |
All-optical fiber Hanbury Brown & Twiss interferometer to study 1300 nm single photon emission of a metamorphic InAs quantum dot G Muñoz-Matutano, D Barrera, CR Fernández-Pousa, R Chulia-Jordan, ... Scientific reports 6 (1), 27214, 2016 | 35 | 2016 |
Low density InAs/(In) GaAs quantum dots emitting at long wavelengths G Trevisi, L Seravalli, P Frigeri, S Franchi Nanotechnology 20 (41), 415607, 2009 | 33 | 2009 |
Osteoblasts preferentially adhere to peaks on micro-structured titanium P Lagonegro, G Trevisi, L Nasi, L Parisi, E Manfredi, S Lumetti, F Rossi, ... Dental Materials Journal 37 (2), 278-285, 2018 | 31 | 2018 |
2D–3D growth transition in metamorphic InAs/InGaAs quantum dots L Seravalli, G Trevisi, P Frigeri CrystEngComm 14 (3), 1155-1160, 2012 | 31 | 2012 |
Design and growth of metamorphic InAs/InGaAs quantum dots for single photon emission in the telecom window L Seravalli, G Trevisi, P Frigeri CrystEngComm 14 (20), 6833-6838, 2012 | 31 | 2012 |
Low-temperature growth of single-crystal Cu (In, Ga) Se2 films by pulsed electron deposition technique S Rampino, M Bronzoni, L Colace, P Frigeri, E Gombia, C Maragliano, ... Solar Energy Materials and Solar Cells 133, 82-86, 2015 | 29 | 2015 |
Comparison of different bonding techniques for efficient strain transfer using piezoelectric actuators D Ziss, J Martín-Sánchez, T Lettner, A Halilovic, G Trevisi, R Trotta, ... Journal of applied physics 121 (13), 2017 | 25 | 2017 |
Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots G Muñoz-Matutano, I Suárez, J Canet-Ferrer, B Alén, D Rivas, L Seravalli, ... Journal of Applied Physics 111 (12), 2012 | 24 | 2012 |