| Realization of continuous Zachariasen carbon monolayer WJ Joo, JH Lee, Y Jang, SG Kang, YN Kwon, J Chung, S Lee, C Kim, ... Science advances 3 (2), e1601821, 2017 | 59 | 2017 |
| In-sensor optoelectronic computing using electrostatically doped silicon H Jang, H Hinton, WB Jung, MH Lee, C Kim, M Park, SK Lee, S Park, ... Nature Electronics 5 (8), 519-525, 2022 | 53 | 2022 |
| Two-dimensional materials inserted at the metal/semiconductor interface: Attractive candidates for semiconductor device contacts MH Lee, Y Cho, KE Byun, KW Shin, SG Nam, C Kim, H Kim, SA Han, ... Nano letters 18 (8), 4878-4884, 2018 | 41 | 2018 |
| Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide C Kim, J Hyun Moon, J Hyuk Yim, H Do Lee, J Ho Lee, H Hee Lee, ... Applied Physics Letters 100 (8), 2012 | 36 | 2012 |
| Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase‐Transition‐Induced Growth A Sohn, C Kim, JH Jung, JH Kim, KE Byun, Y Cho, P Zhao, SW Kim, ... Advanced Materials 34 (48), 2103286, 2022 | 25 | 2022 |
| Fabrication of metal/graphene hybrid interconnects by direct graphene growth and their integration properties CS Lee, KW Shin, HJ Song, H Park, Y Cho, DH Im, H Lee, JH Lee, ... Advanced Electronic Materials 4 (6), 1700624, 2018 | 21 | 2018 |
| Improving the barrier height uniformity of 4H—SiC Schottky barrier diodes by nitric oxide post-oxidation annealing D Lee, C Kim, H Lee, S Lee, H Kang, H Kim, HK Park, J Heo, HJ Kim IEEE electron device letters 35 (8), 868-870, 2014 | 21 | 2014 |
| Barrier height control in metal/silicon contacts with atomically thin MoS2 and WS2 interfacial layers SG Nam, Y Cho, MH Lee, KW Shin, C Kim, K Yang, M Jeong, HJ Shin, ... 2D Materials 5 (4), 041004, 2018 | 11 | 2018 |
| Short-channel effect in 4H-SiC ion-implanted planar MESFETs J Yim, HS Seo, CH Kim, HJ Kim Journal of the Korean Physical Society 59 (3), 2368-2371, 2011 | 10 | 2011 |
| Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC JH Moon, JH Yim, HS Seo, DH Lee, CH Kim, HJ Kim, KY Cheong, ... Applied Physics Letters 96 (12), 2010 | 10 | 2010 |
| The effect of reduced oxidation process using ammonia annealing and deposited oxides on 4H-SiC metal-oxide-semiconductor structure C Kim, S Lee, JH Moon, JR Kim, H Lee, H Kang, H Kim, J Heo, HJ Kim ECS Solid State Letters 4 (9), N9, 2015 | 8 | 2015 |
| Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing S Lee, JM Kim, C Kim, H Kim, HJ Kang, MW Ha, HJ Kim Ceramics International 44 (12), 13565-13571, 2018 | 7 | 2018 |
| Comparative Study of 4H-SiC Epitaxial Layers Grown on 4 Off-Axis Si-and C-Face Substrates Using Bistrimethylsilylmethane Precursor H Lee, H Kim, HS Seo, D Lee, C Kim, S Lee, H Kang, J Heo, HJ Kim ECS Journal of Solid State Science and Technology 4 (8), N89, 2015 | 5 | 2015 |
| Improved 4H-SiC MOS interface produced by oxidized-SiN gate oxide JH Moon, JH Yim, HS Seo, CH Kim, DH Lee, KY Cheong, W Bahng, ... Materials Science Forum 645, 511-514, 2010 | 2 | 2010 |
