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Changhyun Kim
Changhyun Kim
SAIT (Samsung Advanced Institute of Technology)
在 samsung.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Realization of continuous Zachariasen carbon monolayer
WJ Joo, JH Lee, Y Jang, SG Kang, YN Kwon, J Chung, S Lee, C Kim, ...
Science advances 3 (2), e1601821, 2017
592017
In-sensor optoelectronic computing using electrostatically doped silicon
H Jang, H Hinton, WB Jung, MH Lee, C Kim, M Park, SK Lee, S Park, ...
Nature Electronics 5 (8), 519-525, 2022
532022
Two-dimensional materials inserted at the metal/semiconductor interface: Attractive candidates for semiconductor device contacts
MH Lee, Y Cho, KE Byun, KW Shin, SG Nam, C Kim, H Kim, SA Han, ...
Nano letters 18 (8), 4878-4884, 2018
412018
Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide
C Kim, J Hyun Moon, J Hyuk Yim, H Do Lee, J Ho Lee, H Hee Lee, ...
Applied Physics Letters 100 (8), 2012
362012
Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase‐Transition‐Induced Growth
A Sohn, C Kim, JH Jung, JH Kim, KE Byun, Y Cho, P Zhao, SW Kim, ...
Advanced Materials 34 (48), 2103286, 2022
252022
Fabrication of metal/graphene hybrid interconnects by direct graphene growth and their integration properties
CS Lee, KW Shin, HJ Song, H Park, Y Cho, DH Im, H Lee, JH Lee, ...
Advanced Electronic Materials 4 (6), 1700624, 2018
212018
Improving the barrier height uniformity of 4H—SiC Schottky barrier diodes by nitric oxide post-oxidation annealing
D Lee, C Kim, H Lee, S Lee, H Kang, H Kim, HK Park, J Heo, HJ Kim
IEEE electron device letters 35 (8), 868-870, 2014
212014
Barrier height control in metal/silicon contacts with atomically thin MoS2 and WS2 interfacial layers
SG Nam, Y Cho, MH Lee, KW Shin, C Kim, K Yang, M Jeong, HJ Shin, ...
2D Materials 5 (4), 041004, 2018
112018
Short-channel effect in 4H-SiC ion-implanted planar MESFETs
J Yim, HS Seo, CH Kim, HJ Kim
Journal of the Korean Physical Society 59 (3), 2368-2371, 2011
102011
Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC
JH Moon, JH Yim, HS Seo, DH Lee, CH Kim, HJ Kim, KY Cheong, ...
Applied Physics Letters 96 (12), 2010
102010
The effect of reduced oxidation process using ammonia annealing and deposited oxides on 4H-SiC metal-oxide-semiconductor structure
C Kim, S Lee, JH Moon, JR Kim, H Lee, H Kang, H Kim, J Heo, HJ Kim
ECS Solid State Letters 4 (9), N9, 2015
82015
Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing
S Lee, JM Kim, C Kim, H Kim, HJ Kang, MW Ha, HJ Kim
Ceramics International 44 (12), 13565-13571, 2018
72018
Comparative Study of 4H-SiC Epitaxial Layers Grown on 4 Off-Axis Si-and C-Face Substrates Using Bistrimethylsilylmethane Precursor
H Lee, H Kim, HS Seo, D Lee, C Kim, S Lee, H Kang, J Heo, HJ Kim
ECS Journal of Solid State Science and Technology 4 (8), N89, 2015
52015
Improved 4H-SiC MOS interface produced by oxidized-SiN gate oxide
JH Moon, JH Yim, HS Seo, CH Kim, DH Lee, KY Cheong, W Bahng, ...
Materials Science Forum 645, 511-514, 2010
22010
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