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Martin Bivour
Martin Bivour
在 ise.fraunhofer.de 的电子邮件经过验证
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Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
F Feldmann, M Bivour, C Reichel, M Hermle, SW Glunz
Solar energy materials and solar cells 120, 270-274, 2014
7692014
Tunnel oxide passivated contacts as an alternative to partial rear contacts
F Feldmann, M Bivour, C Reichel, H Steinkemper, M Hermle, SW Glunz
Solar Energy Materials and Solar Cells 131, 46-50, 2014
3862014
Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells
M Bivour, J Temmler, H Steinkemper, M Hermle
Solar Energy Materials and Solar Cells 142, 34-41, 2015
3602015
Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses
A Richter, R Müller, J Benick, F Feldmann, B Steinhauser, C Reichel, ...
Nature Energy 6 (4), 429-438, 2021
3562021
Efficient carrier-selective p-and n-contacts for Si solar cells
F Feldmann, M Simon, M Bivour, C Reichel, M Hermle, SW Glunz
Solar Energy Materials and Solar Cells 131, 100-104, 2014
2502014
Carrier-selective contacts for Si solar cells
F Feldmann, M Simon, M Bivour, C Reichel, M Hermle, SW Glunz
Applied Physics Letters 104 (18), 2014
2452014
The irresistible charm of a simple current flow pattern–25% with a solar cell featuring a full-area back contact
SW Glunz, F Feldmann, A Richter, M Bivour, C Reichel, H Steinkemper, ...
Proceedings of the 31st European Photovoltaic Solar Energy Conference and …, 2015
2302015
Passivating contacts and tandem concepts: Approaches for the highest silicon-based solar cell efficiencies
M Hermle, F Feldmann, M Bivour, JC Goldschmidt, SW Glunz
Applied Physics Reviews 7 (2), 2020
2152020
Improving the a-Si: H (p) rear emitter contact of n-type silicon solar cells
M Bivour, C Reichel, M Hermle, SW Glunz
Solar Energy Materials and solar cells 106, 11-16, 2012
1492012
Numerical simulation of carrier-selective electron contacts featuring tunnel oxides
H Steinkemper, F Feldmann, M Bivour, M Hermle
IEEE Journal of Photovoltaics 5 (5), 1348-1356, 2015
1262015
A passivated rear contact for high-efficiency n-type silicon solar cells enabling high Vocs and FF> 82%
F Feldmann, M Bivour, C Reichel, M Hermle, SW Glunz
28th European PV solar energy conference and exhibition 30, 2013
1182013
Numerical analysis of electrical TCO/a-Si: H (p) contact properties for silicon heterojunction solar cells
M Bivour, S Schröer, M Hermle
Energy Procedia 38, 658-669, 2013
1162013
25.1% high‐efficiency monolithic perovskite silicon tandem solar cell with a high bandgap perovskite absorber
PSC Schulze, AJ Bett, M Bivour, P Caprioglio, FM Gerspacher, ...
Solar RRL 4 (7), 2000152, 2020
1112020
Silicon heterojunction rear emitter solar cells: Less restrictions on the optoelectrical properties of front side TCOs
M Bivour, S Schröer, M Hermle, SW Glunz
Solar energy materials and solar cells 122, 120-129, 2014
1112014
Numerical simulation of silicon heterojunction solar cells featuring metal oxides as carrier-selective contacts
C Messmer, M Bivour, J Schön, SW Glunz, M Hermle
IEEE Journal of Photovoltaics 8 (2), 456-464, 2018
1032018
Semi-transparent perovskite solar cells with ITO directly sputtered on spiro-OMeTAD for tandem applications
AJ Bett, KM Winkler, M Bivour, L Cojocaru, OS Kabakli, PSC Schulze, ...
ACS applied materials & interfaces 11 (49), 45796-45804, 2019
952019
Two‐terminal Perovskite silicon tandem solar cells with a high‐Bandgap Perovskite absorber enabling voltages over 1.8 V
AJ Bett, PSC Schulze, KM Winkler, ÖS Kabakli, I Ketterer, LE Mundt, ...
Progress in photovoltaics: research and applications 28 (2), 99-110, 2020
942020
The race for the best silicon bottom cell: Efficiency and cost evaluation of perovskite–silicon tandem solar cells
C Messmer, BS Goraya, S Nold, PSC Schulze, V Sittinger, J Schön, ...
Progress in Photovoltaics: Research and Applications 29 (7), 744-759, 2021
922021
Selectivity issues of MoOx based hole contacts
L Neusel, M Bivour, M Hermle
Energy Procedia 124, 425-434, 2017
872017
Doped layer optimization for silicon heterojunctions by injection-level-dependent open-circuit voltage measurements
M Bivour, M Reusch, S Schröer, F Feldmann, J Temmler, H Steinkemper, ...
IEEE Journal of Photovoltaics 4 (2), 566-574, 2014
852014
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