| Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2 G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ... Journal of Applied Physics 120 (12), 2016 | 175 | 2016 |
| Wide spectral photoresponse of layered platinum diselenide-based photodiodes C Yim, N McEvoy, S Riazimehr, DS Schneider, F Gity, S Monaghan, ... Nano Letters 18 (3), 1794-1800, 2018 | 174 | 2018 |
| A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ... Journal of Applied Physics 109 (2), 2011 | 171 | 2011 |
| Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk Solid-State Electronics 53 (4), 438-444, 2009 | 157 | 2009 |
| Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ... Applied Physics Letters 94 (10), 2009 | 132 | 2009 |
| Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ... Journal of Applied Physics 104 (6), 2008 | 83 | 2008 |
| Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C L Ansari, S Monaghan, N McEvoy, CÓ Coileáin, CP Cullen, J Lin, R Siris, ... npj 2D Materials and Applications 3 (1), 33, 2019 | 80 | 2019 |
| An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ... Journal of Applied Physics 114 (14), 2013 | 67 | 2013 |
| Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment É O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley Applied Physics Letters 99 (21), 2011 | 65 | 2011 |
| Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0. 53Ga0. 47As capacitors with and without an Al2O3 interface control layer A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ... Applied Physics Letters 97 (5), 2010 | 64 | 2010 |
| Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, I Povey, ... Institute of Electrical and Electronics Engineers (IEEE), 2012 | 63 | 2012 |
| The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ... IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013 | 56 | 2013 |
| Rhenium-doped MoS2 films T Hallam, S Monaghan, F Gity, L Ansari, M Schmidt, C Downing, ... Applied Physics Letters 111 (20), 2017 | 52 | 2017 |
| Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors RD Long, B Shin, S Monaghan, K Cherkaoui, J Cagnon, S Stemmer, ... Journal of The Electrochemical Society 158 (5), G103, 2011 | 41 | 2011 |
| Atomic scale model interfaces between high-k hafnium silicates and silicon S Monaghan, JC Greer, SD Elliott Physical Review B 75 (24), 245304, 2007 | 38 | 2007 |
| Electrical analysis of three-stage passivated In0. 53Ga0. 47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer S Monaghan, A O’Mahony, K Cherkaoui, É O’Connor, IM Povey, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 36 | 2011 |
| /Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited for DRAM Applications S Monaghan, K Cherkaoui, É O'Connor, V Djara, PK Hurley, L Oberbeck, ... IEEE electron device letters 30 (3), 219-221, 2009 | 34 | 2009 |
| Back-gated Nb-doped MoS2 junctionless field-effect-transistors G Mirabelli, M Schmidt, B Sheehan, K Cherkaoui, S Monaghan, I Povey, ... AIP Advances 6 (2), 2016 | 33 | 2016 |
| Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0. 53Ga0. 47As surfaces by atomic layer deposition RD Long, É O’Connor, SB Newcomb, S Monaghan, K Cherkaoui, ... Journal of Applied Physics 106 (8), 2009 | 33 | 2009 |
| Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53) PK Hurley, E O'Connor, S Monaghan, R Long, A O'Mahony, IM Povey, ... ECS transactions 25 (6), 113, 2009 | 33 | 2009 |
