| A high-performance tunable LED-compatible current regulator using an integrated voltage nanosensor Z Wang, S Wang, Z Zhang, C Wang, D Yang, X Chen, Z Wang, J Cao, ... IEEE Transactions on Electron Devices 66 (4), 1917-1923, 2019 | 19 | 2019 |
| Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation R Sun, X Chen, C Liu, W Chen, B Zhang Applied Physics Letters 119 (13), 2021 | 11 | 2021 |
| Degradation behavior and mechanism of GaN HEMTs with P-type gate in the third quadrant under repetitive surge current stress X Wang, W Chen, R Sun, C Liu, Y Xia, Y Xin, X Xu, F Wang, X Chen, ... IEEE Transactions on Electron Devices 69 (10), 5733-5741, 2022 | 6 | 2022 |
| A novel high performance lateral AlGaN/GaN Schottky barrier diode using highly effective field plate with polarization enhanced channel Z Wang, X Feng, D Yang, C Chen, Z Wang, X Chen, C Wang, S Wang, ... 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 377-379, 2019 | 3 | 2019 |
| Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation X Chen, Z He, Y Shi, Z Wang, F Wang, R Sun, Y Chen, Y Chen, L He, ... Applied Physics Letters 124 (17), 2024 | 1 | 2024 |
| Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications C Li, X Chen, Z Wang Micromachines 15 (3), 330, 2024 | 1 | 2024 |
| On the Abnormal Reduction and Recovery of Dynamic RON Under UIS Stress in Schottky p-GaN Gate HEMTs C Liu, X Chen, R Sun, J Lai, W Chen, Y Xin, F Wang, X Wang, Z Li, ... IEEE Transactions on Power Electronics 38 (8), 9347-9350, 2023 | 1 | 2023 |
| Modelling on GaN power HEMT with condideration of subthreshold swing using artificial intelligence technology Y Yao, Z Wang, L Li, D Yang, S Wang, X Chen 2019 International Conference on IC Design and Technology (ICICDT), 1-3, 2019 | 1 | 2019 |
| Effect of Hydrogen Poisoning on p-gate AlGaN/GaN HEMTs Z He, L He, K Jiang, X Duan, Y Shi, X Chen, Y Chen, H Wu, G Lu, Y Ni Journal of Physics D: Applied Physics, 2024 | | 2024 |
| Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress X Wang, W Chen, R Sun, C Liu, X Chen, Y Xia, X Xu, Z Wang, P Luo, ... IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel X Chen, F Wang, Z Wang, JK Huang Micromachines 14 (11), 2041, 2023 | | 2023 |
Zeheng WangCERC Fellow, CSIRO在 csiro.au 的电子邮件经过验证
