| Unipolar barrier photodetectors based on van der Waals heterostructures Y Chen, Y Wang, Z Wang, Y Gu, Y Ye, X Chai, J Ye, Y Chen, R Xie, ... Nature Electronics 4 (5), 357-363, 2021 | 384 | 2021 |
| Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi2O2Se Nanosheets T Tong, Y Chen, S Qin, W Li, J Zhang, C Zhu, C Zhang, X Yuan, X Chen, ... Advanced Functional Materials 29 (50), 1905806, 2019 | 123 | 2019 |
| Broadband Bi2O2Se Photodetectors from Infrared to Terahertz Y Chen, W Ma, C Tan, M Luo, W Zhou, N Yao, H Wang, L Zhang, T Xu, ... Advanced Functional Materials 31 (14), 2009554, 2021 | 102 | 2021 |
| A noble metal dichalcogenide for high‐performance field‐effect transistors and broadband photodetectors Z Wang, P Wang, F Wang, J Ye, T He, F Wu, M Peng, P Wu, Y Chen, ... Advanced Functional Materials 30 (5), 1907945, 2020 | 99 | 2020 |
| Air‐stable low‐symmetry narrow‐bandgap 2D sulfide niobium for polarization photodetection Y Wang, P Wu, Z Wang, M Luo, F Zhong, X Ge, K Zhang, M Peng, Y Ye, ... Advanced Materials 32 (45), 2005037, 2020 | 90 | 2020 |
| WSe2 Photovoltaic Device Based on Intramolecular p–n Junction Y Tang, Z Wang, P Wang, F Wu, Y Wang, Y Chen, H Wang, M Peng, ... Small 15 (12), 1805545, 2019 | 89 | 2019 |
| Controllable doping in 2D layered materials Z Wang, H Xia, P Wang, X Zhou, C Liu, Q Zhang, F Wang, M Huang, ... Advanced Materials 33 (48), 2104942, 2021 | 77 | 2021 |
| Ternary 2D Layered Material FePSe3 and Near‐Infrared Photodetector T Xu, M Luo, N Shen, Y Yu, Z Wang, Z Cui, J Qin, F Liang, Y Chen, Y Zhou, ... Advanced Electronic Materials 7 (8), 2100207, 2021 | 31 | 2021 |
| Non-layered ZnSb nanoplates for room temperature infrared polarized photodetectors R Chai, Y Chen, M Zhong, H Yang, F Yan, M Peng, Y Sun, K Wang, Z Wei, ... Journal of Materials Chemistry C 8 (19), 6388-6395, 2020 | 31 | 2020 |
| High-performance MoSe2 homojunction infrared photodetector Z Wang, Y Chen, P Wu, J Ye, M Peng, Y Yan, F Zhong, T He, Y Wang, ... Infrared Physics & Technology 106, 103272, 2020 | 29 | 2020 |
| Gate-tunable ReS2/MoTe2 heterojunction with high-performance photodetection M Luo, X Chen, P Wu, H Wang, Y Chen, F Chen, L Zhang, X Chen Optical and Quantum Electronics 51, 1-10, 2019 | 22 | 2019 |
| Photogating-controlled ZnO photodetector response for visible to near-infrared light Y Wang, F Zhong, H Wang, H Huang, Q Li, J Ye, M Peng, T He, Y Chen, ... Nanotechnology 31 (33), 335204, 2020 | 17 | 2020 |
| Skin effect photon-trapping enhancement in infrared photodiodes H Ge, R Xie, Y Chen, P Wang, Q Li, Y Gu, J Guo, J He, F Wang, W Hu Optics Express 29 (15), 22823-22837, 2021 | 13 | 2021 |
| Narrowing Bandgap of HfS2 by Te Substitution for Short‐Wavelength Infrared Photodetection J Ye, K Liao, X Ge, Z Wang, Y Wang, M Peng, T He, P Wu, H Wang, ... Advanced Optical Materials 9 (11), 2002248, 2021 | 9 | 2021 |
| Bi2O2Se/Au-Based Schottky Phototransistor With Fast Response and Ultrahigh Responsivity T Tong, W Li, S Qin, X Yuan, Y Chen, C Zhang, W Liu, P Wang, W Hu, ... IEEE Electron Device Letters 41 (10), 1464-1467, 2020 | 8 | 2020 |
