| Characterization and modeling of native MOSFETs down to 4.2 K Y Zhang, T Lu, W Wang, Y Zhang, J Xu, C Luo, G Guo IEEE Transactions on Electron Devices 68 (9), 4267-4273, 2021 | 29 | 2021 |
| Hot carrier degradation in MOSFETs at cryogenic temperatures down to 4.2 K Y Zhang, J Xu, TT Lu, Y Zhang, C Luo, G Guo IEEE Transactions on Device and Materials Reliability 21 (4), 620-626, 2021 | 16 | 2021 |
| DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures B Zeng, H Zhang, C Luo, Z Xiang, Y Zhang, M Wen, Q Xue, S Hu, Y Sun, ... Journal of Physics D: Applied Physics 55 (43), 434003, 2022 | 15 | 2022 |
| Characterization and compact modeling of short channel MOSFETs at cryogenic temperatures J Huang, Y Zhang, Y Chen, J Xu, C Luo, G Guo Solid-State Electronics 204, 108637, 2023 | 6 | 2023 |
| Cryo-CMOS modeling and a 600 MHz cryogenic clock generator for quantum computing applications Q Xue*, Y Zhang*, M Wen, X Zhai, Y Chen, T Lu, C Luo, G Guo Chip, 100065, 2023 | 5 | 2023 |
| Cryogenic hysteresis in 110 nm bulk silicon MOSFETs for capacitorless memory applications Y Zhang, Y Chen, J Huang, S Sun, J Xu, C Luo, G Guo IEEE Electron Device Letters, 2023 | 3 | 2023 |
| Characterization of GaN-based HEMTs down to 4.2 K for cryogenic applications B Zeng, H Zhang, Z Xiang, C Luo, Y Zhang, M Weng, Q Xue, S Hu, Y Sun, ... arXiv preprint arXiv:2204.09216, 2022 | 2 | 2022 |
| A cryogenic low power CMOS analog buffer at 4.2 K Y Huang, C Luo, T Lu, Y Zhang, J Xu, G Guo IEICE Electronics Express 18 (12), 20210183-20210183, 2021 | 2 | 2021 |
| Cryogenic modeling of MOSFET device based on BSIM and EKV models T Lu, Y Zhang, Y Zhang, J Xu, G Guo, C Luo arXiv preprint arXiv:2104.08467, 2021 | 1 | 2021 |
| Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature Y Zhang, Y Chen, Y Zhang, L Qiu, J Xu, C Luo, G Guo IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Compact Modeling of Quantum Transport in 55-nm MOSFETs at Cryogenic Temperatures Y Chen, Y Zhang, J Huang, J Xu, C Luo, G Guo IEEE Electron Device Letters, 2023 | | 2023 |
| 低温 LBJT 性能表征 张玉镜， 陈越峰， 张元可， 雒超 低温物理学报 1, 26-32, 2021 | | 2021 |
