| Comprehensive Short Circuit Behavior and Failure Analysis of 1.2 kV SiC MOSFETs Across Multiple Vendors and Generations S Makhdoom, N Ren, C Wang, C Lin, Y Wu, K Sheng IEEE Access, 2024 | | 2024 |
| The impact of the Island Layout on the Performance of the 4H-SiC Floating Island Device C Wang, H Wang, H Cheng, J Wan, C Zhang, Y Li, S Makhdoom, N Ren, ... Journal of Physics: Conference Series 2809 (1), 012051, 2024 | | 2024 |
| Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2 kV SiC MOSFETs S Makhdoom, N Ren, C Wang, Y Wu, H Wang, K Sheng Journal of Physics: Conference Series 2809 (1), 012002, 2024 | | 2024 |
| High Performance AlGaN/GaN Hemts on GaN Substrates L Lei, S Yang, K Yu, Y Zhang, S Makhdoom, X Wang, T Zhou, X Lu, ... Electrochemical Society Meeting Abstracts 229, 1225-1225, 2016 | | 2016 |
| GaN Based Vertical Transistors on GaN Substrates A Zhang, X Lu, L Lei, Y Zhang, S Yang, K Yu, S Makhdoom, X Wang, ... Electrochemical Society Meeting Abstracts 229, 1224-1224, 2016 | | 2016 |
Ce WangZhejiang University在 zju.edu.cn 的电子邮件经过验证
Ce WangZhejiang University在 zju.edu.cn 的电子邮件经过验证