| Chemical synthesis of PEDOT nanotubes X Zhang, JS Lee, GS Lee, DK Cha, MJ Kim, DJ Yang, SK Manohar Macromolecules 39 (2), 470-472, 2006 | 245 | 2006 |
| Isolation method for semiconductor device J Yoo, M Park, D Ahn, S Hong, KW Park, JS Lee US Patent App. 10/147,326, 2002 | 226 | 2002 |
| FinFET process refinements for improved mobility and gate work function engineering YK Choi, L Chang, P Ranade, JS Lee, D Ha, S Balasubramanian, ... Digest. International Electron Devices Meeting,, 259-262, 2002 | 193 | 2002 |
| Silicon nanowire biosensors for detection of cardiac troponin I (cTnI) with high sensitivity K Kim, C Park, D Kwon, D Kim, M Meyyappan, S Jeon, JS Lee Biosensors and Bioelectronics 77, 695-701, 2016 | 192 | 2016 |
| Electrical characteristics of 20-nm junctionless Si nanowire transistors CH Park, MD Ko, KH Kim, RH Baek, CW Sohn, CK Baek, S Park, MJ Deen, ... Solid-State Electronics 73, 7-10, 2012 | 168 | 2012 |
| Nanoscale memory devices A Chung, J Deen, JS Lee, M Meyyappan Nanotechnology 21 (41), 412001, 2010 | 147 | 2010 |
| U-health smart home N Agoulmine, MJ Deen, JS Lee, M Meyyappan IEEE Nanotechnology Magazine 5 (3), 6-11, 2011 | 112 | 2011 |
| Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics S Kim, T Rim, K Kim, U Lee, E Baek, H Lee, CK Baek, M Meyyappan, ... Analyst 136 (23), 5012-5016, 2011 | 106 | 2011 |
| Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs JS Lee, YK Choi, D Ha, S Balasubramanian, TJ King, J Bokor IEEE Electron Device Letters 24 (3), 186-188, 2003 | 88 | 2003 |
| Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector M Shaygan, K Davami, N Kheirabi, CK Baek, G Cuniberti, M Meyyappan, ... Physical Chemistry Chemical Physics 16 (41), 22687-22693, 2014 | 69 | 2014 |
| Enabling communication and cooperation in bio-nanosensor networks: toward innovative healthcare solutions N Agoulmine, K Kim, S Kim, T Rim, JS Lee, M Meyyappan IEEE Wireless Communications 19 (5), 42-51, 2012 | 64 | 2012 |
| Single-event transient in FinFETs and nanosheet FETs J Kim, JS Lee, JW Han, M Meyyappan IEEE Electron Device Letters 39 (12), 1840-1843, 2018 | 55 | 2018 |
| Junction design strategy for Si bulk FinFETs for system-on-chip applications down to the 7-nm node JS Yoon, EY Jeong, CK Baek, YR Kim, JH Hong, JS Lee, RH Baek, ... IEEE Electron Device Letters 36 (10), 994-996, 2015 | 45 | 2015 |
| Synthesis of ZnTe nanostructures by vapor-liquid-solid technique (vol 504, pg 62, 2011) K Davami, D Kang, JS Lee, M Meyyappan Chemical Physics Letters 507 (1-3), 208-208, 2011 | 44* | 2011 |
| Method of fabricating a trench isolation structure having sidewall oxide layers with different thicknesses J Yoo, JS Lee, N Lee US Patent 6,486,039, 2002 | 42 | 2002 |
| Synthesis of ZnTe nanostructures by vapor–liquid–solid technique K Devami, D Kang, JS Lee, M Meyyappan Chemical Physics Letters 504 (1-3), 62-66, 2011 | 40 | 2011 |
| Suspended honeycomb nanowire ISFETs for improved stiction-free performance K Kim, T Rim, C Park, D Kim, M Meyyappan, JS Lee Nanotechnology 25 (34), 345501, 2014 | 36 | 2014 |
| Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the-Function Technique RH Baek, CK Baek, SW Jung, YY Yeoh, DW Kim, JS Lee, DM Kim, ... IEEE Transactions on Nanotechnology 9 (2), 212-217, 2009 | 36 | 2009 |
| Investigation of low-frequency noise behavior after hot-carrier stress in an n-channel junctionless nanowire MOSFET CH Park, MD Ko, KH Kim, SH Lee, JS Yoon, JS Lee, YH Jeong IEEE electron device letters 33 (11), 1538-1540, 2012 | 34 | 2012 |
| Thermally Phase‐Transformed In2Se3 Nanowires for Highly Sensitive Photodetectors D Kang, T Rim, CK Baek, M Meyyappan, JS Lee Small 10 (18), 3795-3802, 2014 | 31 | 2014 |
