| Negative- System of Carbon Vacancy in -SiC NT Son, XT Trinh, LS Løvlie, BG Svensson, K Kawahara, J Suda, ... Physical review letters 109 (18), 187603, 2012 | 280 | 2012 |
| Conjugated polyelectrolyte blends for electrochromic and electrochemical transistor devices E Zeglio, M Vagin, C Musumeci, FN Ajjan, R Gabrielsson, XT Trinh, ... Chemistry of Materials 27 (18), 6385-6393, 2015 | 101 | 2015 |
| Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance K Kawahara, X Thang Trinh, N Tien Son, E Janzén, J Suda, T Kimoto Applied Physics Letters 102 (11), 2013 | 76 | 2013 |
| Stable and metastable Si negative-U centers in AlGaN and AlN XT Trinh, D Nilsson, IG Ivanov, E Janzén, A Kakanakova-Georgieva, ... Applied Physics Letters 105 (16), 2014 | 71 | 2014 |
| Electronic properties of Si-doped AlxGa1− xN with aluminum mole fractions above 80% F Mehnke, XT Trinh, H Pingel, T Wernicke, E Janzén, NT Son, M Kneissl Journal of Applied Physics 120 (14), 2016 | 68 | 2016 |
| Negative- carbon vacancy in 4-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site XT Trinh, K Szász, T Hornos, K Kawahara, J Suda, T Kimoto, A Gali, ... Physical Review B 88 (23), 235209, 2013 | 62 | 2013 |
| Quantitative comparison between Z1∕ 2 center and carbon vacancy in 4H-SiC K Kawahara, X Thang Trinh, N Tien Son, E JanzÈn, J Suda, T Kimoto Journal of Applied Physics 115 (14), 2014 | 58 | 2014 |
| The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN A Kakanakova-Georgieva, D Nilsson, XT Trinh, U Forsberg, NT Son, ... Applied Physics Letters 102 (13), 2013 | 42 | 2013 |
| Theoretical and electron paramagnetic resonance studies of hyperfine interaction in nitrogen doped 4H and 6H SiC K Szász, XT Trinh, NT Son, E Janzén, A Gali Journal of Applied Physics 115 (7), 2014 | 26 | 2014 |
| Electron paramagnetic resonance and theoretical studies of Nb in 4H-and 6H-SiC N Tien Son, X Thang Trinh, A Gällström, S Leone, O Kordina, E Janzén, ... Journal of Applied Physics 112 (8), 2012 | 16 | 2012 |
| Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory A Szállás, K Szász, XT Trinh, NT Son, E Janzén, A Gali Journal of Applied Physics 116 (11), 2014 | 15 | 2014 |
| n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon A Kakanakova-Georgieva, SL Sahonta, D Nilsson, XT Trinh, NT Son, ... Journal of Materials Chemistry C 4 (35), 8291-8296, 2016 | 14 | 2016 |
| Highly sensitive and robust 3C-SiC/Si pressure sensor with stress amplification structure B Tong, TH Nguyen, HQ Nguyen, TK Nguyen, T Nguyen, T Dinh, ... Materials & Design 224, 111297, 2022 | 13 | 2022 |
| Negative-U behavior of the Si donor in Al0. 77Ga0. 23N XT Trinh, D Nilsson, IG Ivanov, E Janzen, A Kakanakova-Georgieva, ... Applied Physics Letters 103 (4), 042101, 2013 | 13 | 2013 |
| On the behavior of silicon donor in conductive AlxGa1–xN (0.63 ≤ x ≤ 1) D Nilsson, XT Trinh, E Janzén, NT Son, A Kakanakova‐Georgieva physica status solidi (b) 252 (6), 1306-1310, 2015 | 12 | 2015 |
| Effect of environmental conditions on quality factors of MEMS cantilever beam resonator in gas rarefaction MT Phan, XT Trinh, QC Le, VKT Ngo, CC Nguyen Sensing and Imaging 22 (1), 6, 2021 | 10 | 2021 |
| Correlation of native point defects and photocatalytic activity of annealed ZnO nanoparticle studied by electron spin resonance and photoluminescence emission XS Nguyen, MQ Nguyen, XT Trinh, AC Joita, SV Nistor Semiconductor Science and Technology 35 (9), 095035, 2020 | 10 | 2020 |
| Deep levels related to the carbon antisite–vacancy pair in 4H-SiC H Nakane, M Kato, Y Ohkouchi, XT Trinh, IG Ivanov, T Ohshima, NT Son Journal of Applied Physics 130 (6), 2021 | 9 | 2021 |
| Formulation of geometrically nonlinear numerical model for design of MEMS-based piezoresistive pressure sensor operating in the low-pressure range QC Le, TK Nguyen, XT Trinh, VKT Ngo, TH Ly, CC Nguyen Sensing and Imaging 23 (1), 32, 2022 | 4 | 2022 |
| Temperature and relative humidity dependence of quality factors of MEMS cantilever resonators in atmospheric pressure QC Le, MT Phan, XT Trinh, HL Truong, VKT Ngo, CC Nguyen Sensing and Imaging 22 (1), 36, 2021 | 3 | 2021 |
Nguyen Tien Sonprofessor i semiconductor physics, Linköping University在 ifm.liu.se 的电子邮件经过验证
