Band structure and fundamental optical transitions in wurtzite AlN J Li, KB Nam, ML Nakarmi, JY Lin, HX Jiang, P Carrier, SH Wei Applied Physics Letters 83 (25), 5163-5165, 2003 | 465 | 2003 |
InGaN/GaN multiple quantum well solar cells with long operating wavelengths R Dahal, B Pantha, J Li, JY Lin, HX Jiang Applied Physics Letters 94 (6), 063505, 2009 | 463 | 2009 |
Unique optical properties of alloys and related ultraviolet emitters KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 84 (25), 5264-5266, 2004 | 427 | 2004 |
III-nitride blue microdisplays HX Jiang, SX Jin, J Li, J Shakya, JY Lin Applied Physics Letters 78 (9), 1303-1305, 2001 | 381 | 2001 |
III-Nitride full-scale high-resolution microdisplays J Day, J Li, DYC Lie, C Bradford, JY Lin, HX Jiang Applied Physics Letters 99 (3), 031116, 2011 | 378 | 2011 |
Mg acceptor level in AlN probed by deep ultraviolet photoluminescence KB Nam, ML Nakarmi, J Li, JY Lin, HX Jiang Applied physics letters 83 (5), 878-880, 2003 | 357 | 2003 |
GaN microdisk light emitting diodes SX Jin, J Li, JZ Li, JY Lin, HX Jiang Applied Physics Letters 76 (5), 631-633, 2000 | 262 | 2000 |
InGaN/GaN multiple quantum well concentrator solar cells R Dahal, J Li, K Aryal, JY Lin, HX Jiang Applied Physics Letters 97 (7), 073115, 2010 | 256 | 2010 |
deep ultraviolet photodetectors based on AlN J Li, ZY Fan, R Dahal, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 89 (21), 213510, 2006 | 239 | 2006 |
Optical and electrical properties of Mg-doped p-type J Li, TN Oder, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 80 (7), 1210-1212, 2002 | 237 | 2002 |
Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material R Dahal, J Li, S Majety, BN Pantha, XK Cao, JY Lin, HX Jiang Applied Physics Letters 98 (21), 211110, 2011 | 231 | 2011 |
Temperature and compositional dependence of the energy band gap of AlGaN alloys N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 87 (24), 242104, 2005 | 225 | 2005 |
Micro-emitter array based full-color micro-display Z Fan, J Li, J Lin, H Jiang US Patent 8,058,663, 2011 | 220 | 2011 |
InGaN/GaN quantum well interconnected microdisk light emitting diodes SX Jin, J Li, JY Lin, HX Jiang Applied Physics Letters 77 (20), 3236-3238, 2000 | 190 | 2000 |
Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping ML Nakarmi, KH Kim, J Li, JY Lin, HX Jiang Applied physics letters 82 (18), 3041-3043, 2003 | 185 | 2003 |
Time-resolved photoluminescence studies of alloys HS Kim, RA Mair, J Li, JY Lin, HX Jiang Applied Physics Letters 76 (10), 1252-1254, 2000 | 175 | 2000 |
Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers J Li, S Majety, R Dahal, WP Zhao, JY Lin, HX Jiang Applied Physics Letters 101 (17), 171112, 2012 | 169 | 2012 |
Correlation between optoelectronic and structural properties and epilayer thickness of AlN BN Pantha, R Dahal, ML Nakarmi, N Nepal, J Li, JY Lin, HX Jiang, ... Applied physics letters 90 (24), 241101, 2007 | 164 | 2007 |
Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells K Aryal, BN Pantha, J Li, JY Lin, HX Jiang Applied Physics Letters 96 (5), 052110, 2010 | 161 | 2010 |
Thermoelectric properties of alloys BN Pantha, R Dahal, J Li, JY Lin, HX Jiang, G Pomrenke Applied Physics Letters 92 (4), 042112, 2008 | 156 | 2008 |