Plasma-assisted atomic layer deposition: basics, opportunities, and challenges HB Profijt, SE Potts, MCM Van de Sanden, WMM Kessels Journal of Vacuum Science & Technology A 29 (5), 2011 | 1052 | 2011 |
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells G Dingemans, WMM Kessels Journal of Vacuum Science & Technology A 30 (4), 2012 | 953 | 2012 |
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 B Hoex, SBS Heil, E Langereis, MCM Van de Sanden, WMM Kessels Applied physics letters 89 (4), 2006 | 937 | 2006 |
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3 B Hoex, JJH Gielis, MCM Van de Sanden, WMM Kessels Journal of Applied physics 104 (11), 2008 | 723 | 2008 |
Silicon surface passivation by atomic layer deposited Al2O3 B Hoex, J Schmidt, P Pohl, MCM Van de Sanden, WMM Kessels Journal of Applied Physics 104 (4), 2008 | 630 | 2008 |
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3 J Schmidt, A Merkle, R Brendel, B Hoex, MCM de Sanden, WMM Kessels Progress in photovoltaics: research and applications 16 (6), 461-466, 2008 | 608 | 2008 |
Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ... Applied Physics Letters 91 (11), 2007 | 514 | 2007 |
High efficiency n-type Si solar cells on Al2O3-passivated boron emitters J Benick, B Hoex, MCM Van De Sanden, WMM Kessels, O Schultz, ... Applied Physics Letters 92 (25), 2008 | 491 | 2008 |
Determining the material structure of microcrystalline silicon from Raman spectra C Smit, R Van Swaaij, H Donker, A Petit, WMM Kessels, ... Journal of applied physics 94 (5), 3582-3588, 2003 | 457 | 2003 |
The use of atomic layer deposition in advanced nanopatterning AJM Mackus, AA Bol, WMM Kessels Nanoscale 6 (19), 10941-10960, 2014 | 408 | 2014 |
Plasma atomic layer deposition HCM Knoops, K De Peuter, WMM Kessels US Patent 9,637,823, 2017 | 395 | 2017 |
In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition E Langereis, SBS Heil, HCM Knoops, W Keuning, MCM Van De Sanden, ... Journal of Physics D: Applied Physics 42 (7), 073001, 2009 | 391 | 2009 |
Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma HW De Vries, MCM van de Sanden, M Creatore, WMM Kessels US Patent App. 12/304,614, 2009 | 370 | 2009 |
Passivating contacts for crystalline silicon solar cells: From concepts and materials to prospects J Melskens, BWH van de Loo, B Macco, LE Black, S Smit, WMM Kessels IEEE Journal of Photovoltaics 8 (2), 373-388, 2018 | 367 | 2018 |
Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor JL Van Hemmen, SBS Heil, JH Klootwijk, F Roozeboom, CJ Hodson, ... Journal of The Electrochemical Society 154 (7), G165, 2007 | 359 | 2007 |
Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers E Langereis, M Creatore, SBS Heil, MCM Van de Sanden, WMM Kessels Applied physics letters 89 (8), 2006 | 343 | 2006 |
Vacancies and voids in hydrogenated amorphous silicon AHM Smets, WMM Kessels, MCM Van de Sanden Applied physics letters 82 (10), 1547-1549, 2003 | 331 | 2003 |
Flexible perovskite photovoltaic modules and cells rased on atomic layer deposited compact layers and UV-irradiated TiO2 scaffolds on plastic substrates F Di Giacomo, V Zardetto, A D'Epifanio, S Pescetelli, F Matteocci, S Razza, ... Advanced Energy Materials 5 (8), 1-9, 2015 | 289 | 2015 |
Influence of the deposition temperature on the c-Si surface passivation by Al2O3 films synthesized by ALD and PECVD G Dingemans, MCM Van de Sanden, WMM Kessels Electrochemical and Solid-state letters 13 (3), H76, 2009 | 273 | 2009 |
Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing JA Van Delft, D Garcia-Alonso, WMM Kessels Semiconductor Science and Technology 27 (7), 074002, 2012 | 264 | 2012 |