| Unbiased line width roughness measurements with critical dimension scanning electron microscopy and critical dimension atomic force microscopy L Azarnouche, E Pargon, K Menguelti, M Fouchier, D Fuard, P Gouraud, ... Journal of Applied Physics 111 (8), 2012 | 56 | 2012 |
| Plasma impact on 193 nm photoresist linewidth roughness: Role of plasma vacuum ultraviolet light E Pargon, M Martin, K Menguelti, L Azarnouche, J Foucher, O Joubert Applied Physics Letters 94 (10), 2009 | 55 | 2009 |
| HBr plasma treatment versus VUV light treatment to improve 193 nm photoresist pattern linewidth roughness E Pargon, L Azarnouche, M Fouchier, K Menguelti, R Tiron, C Sourd, ... Plasma Processes and Polymers 8 (12), 1184-1195, 2011 | 46 | 2011 |
| Benefits of plasma treatments on critical dimension control and line width roughness transfer during gate patterning L Azarnouche, E Pargon, K Menguelti, M Fouchier, O Joubert, P Gouraud, ... Journal of Vacuum Science & Technology B 31 (1), 2013 | 40 | 2013 |
| Structurally stable manganese alkoxide films grown by hybrid molecular layer deposition for electrochemical applications DS Bergsman, JG Baker, RG Closser, C MacIsaac, M Lillethorup, ... Advanced Functional Materials 29 (43), 1904129, 2019 | 23 | 2019 |
| Vacuum ultra violet absorption spectroscopy of 193 nm photoresists M Fouchier, E Pargon, L Azarnouche, K Menguelti, O Joubert, ... Applied Physics A 105, 399-405, 2011 | 18 | 2011 |
| Interactions between plasma and block copolymers used in directed self-assembly patterning S Sirard, L Azarnouche, E Gurer, W Durand, M Maher, K Mori, G Blachut, ... Advanced Etch Technology for Nanopatterning V 9782, 38-48, 2016 | 15 | 2016 |
| Plasma and photon interactions with organosilicon polymers for directed self-assembly patterning applications L Azarnouche, SM Sirard, WJ Durand, G Blachut, E Gurer, DJ Hymes, ... Journal of Vacuum Science & Technology B 34 (6), 2016 | 13 | 2016 |
| Plasma treatments to improve line-width roughness during gate patterning L Azarnouche, E Pargon, K Menguelti, M Fouchier, M Brihoum, R Ramos, ... Journal of Micro/Nanolithography, MEMS, and MOEMS 12 (4), 041304-041304, 2013 | 13 | 2013 |
| Smoothing mechanisms involved in thermal treatment for linewidth roughness reduction of 193-nm photoresist patterns E Pargon, L Azarnouche, M Fouchier, K Menguelti, J Jussot Journal of Vacuum Science & Technology B 31 (6), 2013 | 11 | 2013 |
| Towards new plasma technologies for 22nm gate etch processes and beyond O Joubert, M Darnon, G Cunge, E Pargon, D Thibault, C Petit-Etienne, ... Advanced Etch Technology for Nanopatterning 8328, 65-74, 2012 | 10 | 2012 |
| 193nm resist chemical modification induced by HBr cure plasma treatment: a TD-GC/MS outgassing study R Tiron, E Pargon, L Azarnouche, H Fontaine, S Cetre, C Sourd Advances in Resist Materials and Processing Technology XXVIII 7972, 351-359, 2011 | 6 | 2011 |
| Plasma treatment to improve linewidth roughness during gate patterning L Azarnouche, E Pargon, K Menguelti, M Fouchier, M Brihoum, R Ramos, ... Advanced Etch Technology for Nanopatterning 8328, 83-93, 2012 | 5 | 2012 |
| Plasma etch of block copolymers for lithography S Sirard, L Azarnouche, E Gurer, W Durand, M Maher, K Mori, G Blachut, ... SPIE Newsroom, 2016 | 2 | 2016 |
| Impact of plasma and annealing treatments on 193nm photoresist Linewidth roughness and profile L Azarnouche, E Pargon, K Menguelti, M Fouchier, R Tiron, P Gouraud, ... 56th International AVS Symposium & Topical Conferences, 2010 | 1 | 2010 |
| A CD AFM study of the plasma impact on 193nm Photoresist LWR: Role of plasma UV and ions E Pargon, M Martin, K Menguelti, L Azarnouche, J Foucher, O Joubert Metrology, Inspection, and Process Control for Microlithography XXIII 7272 …, 2009 | 1 | 2009 |
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| Metrology and Linewidth roughness issues during complex metal/high-k gate stack patterning for sub-20nm technological nodes E Pargon, M Fouchier, M Brihoum, L Azarnouche, K Menguelti, J Jussot, ... 60th International AVS Symposium & Topical Conferences, 2013 | | 2013 |
| Development of a new plasma treatment followed by a bake for photoresist linewidth roughness smoothening M Fouchier, E Pargon, L Azarnouche, K Menguelti, M Brihoum AVS 2012, 2012 | | 2012 |
| On the origin of the line width roughness of photoresist patterns after plasma exposure R Ramos, M Brihoum, K Menguelti, L Azarnouche, M Fouchier, E Pargon, ... AVS 59th Symposium, 2012 | | 2012 |
