| Structure and method for fabricating self-aligned metal contacts H Zhu, W Rausch US Patent 7,981,751, 2011 | 445 | 2011 |
| Characteristics and device design of sub-100 nm strained Si N-and PMOSFETs K Rim, J Chu, H Chen, KA Jenkins, T Kanarsky, K Lee, A Mocuta, H Zhu, ... 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002 | 412 | 2002 |
| MOSFET with super-steep retrograded island H Zhu, E Leobandung, AC Mocuta, DM Mocuta US Patent 7,723,750, 2010 | 348 | 2010 |
| Sintering processes of two nanoparticles: a study by molecular dynamics simulations H Zhu Philosophical Magazine Letters 73 (1), 27-33, 1996 | 340 | 1996 |
| Method of making 3D integrated circuits MG Farooq, SS Iyer, SJ Koester, H Zhu US Patent 8,158,515, 2012 | 305 | 2012 |
| Finfet memory device with dual separate gates and method of operation HS Yang, RC Wong, H Zhu US Patent App. 11/925,177, 2009 | 280 | 2009 |
| Two-sided semiconductor structure H Zhu US Patent 8,299,583, 2012 | 246 | 2012 |
| Field effect device structure including self-aligned spacer shaped contact H Zhu US Patent App. 12/039,063, 2009 | 229 | 2009 |
| 3D integrated circuit structure, semiconductor device and method of manufacturing same H Zhu US Patent 9,064,849, 2015 | 227 | 2015 |
| 3D integrated circuit and method of manufacturing the same H Zhu US Patent 8,541,305, 2013 | 222 | 2013 |
| Allocating channels in a mobile ad hoc network T Billhartz US Patent 7,616,961, 2009 | 220 | 2009 |
| Bonded structure employing metal semiconductor alloy bonding MG Farooq, Z Li, Z Luo, H Zhu US Patent 8,841,777, 2014 | 189 | 2014 |
| Enhanced mobility CMOS transistors with a V-shaped channel with self-alignment to shallow trench isolation H Zhu, TW Dyer US Patent 7,728,364, 2010 | 184 | 2010 |
| Structures and methods for making strained MOSFETs H Zhu, SW Bedell, BB Doris, Y Zhang US Patent 7,247,912, 2007 | 174 | 2007 |
| High performance MOSFET H Zhu, J Wang US Patent 7,704,844, 2010 | 165 | 2010 |
| State of the art and future perspectives in advanced CMOS technology HH Radamson, H Zhu, Z Wu, X He, H Lin, J Liu, J Xiang, Z Kong, W Xiong, ... Nanomaterials 10 (8), 1555, 2020 | 157 | 2020 |
| Method of manufacturing a body-contacted finfet H Zhu, TW Dyer, JA Mandelman, W Rausch US Patent 7,485,520, 2009 | 143 | 2009 |
| Structure and method for manufacturing MOSFET with super-steep retrograded island H Zhu, E Leobandung, AC Mocuta, DM Mocuta US Patent 7,268,049, 2007 | 135 | 2007 |
| Structure and method for manufacturing strained FINFET H Zhu, BB Doris US Patent 7,224,033, 2007 | 132 | 2007 |
| High mobility CMOS circuits BB Doris, OG Gluschenkov, H Zhu US Patent 7,015,082, 2006 | 129 | 2006 |
Jun LuoInstitute of Microelectronics, Chinese Academy of Sciences在 ime.ac.cn 的电子邮件经过验证
