| Model for power cycling lifetime of IGBT modules-various factors influencing lifetime R Bayerer, T Herrmann, T Licht, J Lutz, M Feller 5th international conference on integrated power electronics systems, 1-6, 2008 | 852 | 2008 |
| High-voltage, high-performance switch using series-connected IGBTs C Abbate, G Busatto, F Iannuzzo IEEE Transactions on Power Electronics 25 (9), 2450-2459, 2010 | 134 | 2010 |
| Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes C Abbate, G Busatto, P Cova, N Delmonte, F Giuliani, F Iannuzzo, ... IEEE Transactions on Nuclear Science 62 (1), 202-209, 2015 | 57 | 2015 |
| Gate damages induced in SiC power MOSFETs during heavy-ion irradiation—Part I C Abbate, G Busatto, D Tedesco, A Sanseverino, L Silvestrin, F Velardi, ... IEEE Transactions on Electron Devices 66 (10), 4235-4242, 2019 | 53 | 2019 |
| Instabilities in silicon power devices: A review of failure mechanisms in modern power devices F Iannuzzo, C Abbate, G Busatto IEEE Industrial Electronics Magazine 8 (3), 28-39, 2014 | 51 | 2014 |
| Series connection of high power IGBT modules for traction applications C Abbate, G Busatto, L Fratelli, F Iannuzzo, B Cascone, G Giannini 2005 European Conference on Power Electronics and Applications, 8 pp.-P. 8, 2005 | 44 | 2005 |
| Experimental study of single event effects induced by heavy ion irradiation in enhancement mode GaN power HEMT C Abbate, G Busatto, F Iannuzzo, S Mattiazzo, A Sanseverino, L Silvestrin, ... Microelectronics Reliability 55 (9-10), 1496-1500, 2015 | 39 | 2015 |
| Gate damages induced in SiC power MOSFETs during heavy-ion irradiation—Part II C Abbate, G Busatto, D Tedesco, A Sanseverino, F Velardi, J Wyss IEEE Transactions on Electron Devices 66 (10), 4243-4250, 2019 | 37 | 2019 |
| Lifetime modeling and prediction of power devices M Ciappa 5th international conference on integrated power electronics systems, 1-9, 2008 | 37 | 2008 |
| EMI Characterisation of high power IGBT modules for Traction Application G Busatto, C Abbate, F Iannuzzo, L Fratelli, B Cascone, G Giannini 2005 IEEE 36th Power Electronics Specialists Conference, 2180-2186, 2005 | 36 | 2005 |
| Thermal damage in SiC Schottky diodes induced by SE heavy ions C Abbate, G Busatto, P Cova, N Delmonte, F Giuliani, F Iannuzzo, ... Microelectronics Reliability 54 (9-10), 2200-2206, 2014 | 31 | 2014 |
| Thermal instability during short circuit of normally-off AlGaN/GaN HFETs C Abbate, F Iannuzzo, G Busatto Microelectronics Reliability 53 (9-11), 1481-1485, 2013 | 30 | 2013 |
| Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit C Abbate, G Busatto, A Sanseverino, D Tedesco, F Velardi Microelectronics Reliability 100, 113454, 2019 | 24 | 2019 |
| Radiation performance of new semiconductor power devices for the LHC experiment upgrades C Abbate, M Alderighi, S Baccaro, G Busatto, M Citterio, P Cova, ... POS PROCEEDINGS OF SCIENCE, 1-7, 2013 | 23 | 2013 |
| Developments on DC/DC converters for the LHC experiment upgrades C Abbate, M Alderighi, S Baccaro, G Busatto, M Citterio, P Cova, ... Journal of Instrumentation 9 (02), C02017, 2014 | 21 | 2014 |
| Operation of SiC normally-off JFET at the edges of its safe operating area C Abbate, G Busatto, F Iannuzzo Microelectronics Reliability 51 (9-11), 1767-1772, 2011 | 21 | 2011 |
| Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests C Abbate, G Busatto, A Sanseverino, D Tedesco, F Velardi Microelectronics Reliability 88, 677-683, 2018 | 19 | 2018 |
| Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit C Abbate, G Busatto, A Sanseverino, D Tedesco, F Velardi Microelectronics Reliability 76, 314-320, 2017 | 19 | 2017 |
| Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation C Abbate, G Busatto, S Mattiazzo, A Sanseverino, L Silvestrin, D Tedesco, ... Microelectronics Reliability 88, 941-945, 2018 | 16 | 2018 |
| IGBT RBSOA non-destructive testing methods: Analysis and discussion C Abbate, G Busatto, F Iannuzzo Microelectronics Reliability 50 (9-11), 1731-1737, 2010 | 16 | 2010 |
Francesco IannuzzoFull professor, University of Aalborg, Denmark在 et.aau.dk 的电子邮件经过验证
