| Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices S Dimitrijev, J Han, HA Moghadam, A Aminbeidokhti Mrs Bulletin 40 (5), 399-405, 2015 | 114 | 2015 |
| Transient-current method for measurement of active near-interface oxide traps in 4H-SiC MOS capacitors and MOSFETs HA Moghadam, S Dimitrijev, J Han, D Haasmann, A Aminbeidokhti IEEE Transactions on Electron Devices 62 (8), 2670-2674, 2015 | 66 | 2015 |
| A novel high-breakdown-voltage SOI MESFET by modified charge distribution A Aminbeidokhti, AA Orouji, S Rahmaninezhad, M Ghasemian IEEE transactions on electron devices 59 (5), 1255-1262, 2012 | 57 | 2012 |
| A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications A Aminbeidokhti, AA Orouji Physica E: Low-dimensional Systems and Nanostructures 44 (3), 708-713, 2011 | 47 | 2011 |
| A novel double-recessed 4H-SiC MESFET with partly undoped space region AA Orouji, A Aminbeidokhti Superlattices and Microstructures 50 (6), 680-690, 2011 | 43 | 2011 |
| High-voltage and RF performance of SOI MESFET using controlled electric field distribution A Aminbeidokhti, AA Orouji, M Rahimian IEEE transactions on electron devices 59 (10), 2842-2845, 2012 | 40 | 2012 |
| Gate-voltage independence of electron mobility in power AlGaN/GaN HEMTs A Aminbeidokhti, S Dimitrijev, AK Hanumanthappa, HA Moghadam, ... IEEE Transactions on Electron Devices 63 (3), 1013-1019, 2016 | 30 | 2016 |
| A novel symmetric GaN MESFET by dual extra layers of Si3N4 Z Ramezani, AA Orouji, A Aminbeidokhti Physica E: Low-Dimensional Systems and Nanostructures 70, 135-140, 2015 | 24 | 2015 |
| A novel high frequency SOI MESFET by modified gate capacitances AA Orouji, Z Ramezani, P Keshavarzi, A Aminbeidokhti Superlattices and Microstructures 61, 69-80, 2013 | 22 | 2013 |
| A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement M Rahimian, AA Orouji, A Aminbeidokhti Current Applied Physics 13 (4), 779-784, 2013 | 20 | 2013 |
| The power law of phonon-limited electron mobility in the 2-D electron gas of AlGaN/GaN heterostructure A Aminbeidokhti, S Dimitrijev, J Han, X Chen, X Xu IEEE Transactions on Electron Devices 63 (5), 2214-2218, 2016 | 19 | 2016 |
| Quantified density of active near interface oxide traps in 4H-SiC MOS capacitors HA Moghadam, S Dimitrijev, JS Han, A Aminbeidokhti, D Haasmann Materials Science Forum 858, 603-606, 2016 | 14 | 2016 |
| A method for extraction of electron mobility in power HEMTs A Aminbeidokhti, S Dimitrijev, J Han, X Xu, C Wang, S Qu, HA Moghadam, ... Superlattices and Microstructures 85, 543-550, 2015 | 14 | 2015 |
| A new double-recessed 4H-SiC MESFET with superior RF characteristics A Aminbeidokhti, AA Orouji International Journal of Electronics 100 (2), 171-179, 2013 | 13 | 2013 |
| A novel GaAs MESFET with multi-recessed drift region and partly p-type doped space layer AA Orouji, A Aminbeidokhti, M Rahimian 2011 International Conference on Electronic Devices, Systems and …, 2011 | 7 | 2011 |
| 32 nm high current performance double gate MOSFET for low power CMOS circuits M Rahimian, AA Orouji, A Aminbeidokhti International Journal of Electronics 102 (3), 347-361, 2015 | 3 | 2015 |
| Dipole Type Behavior of NO Grown Oxides on 4H–SiC D Haasmann, HA Moghadam, JS Han, A Aminbeidokhti, A Iacopi, ... Materials Science Forum 858, 453-456, 2016 | 2 | 2016 |
| Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs P Tanner, S Dimitrijev, HA Moghadam, A Aminbeidokhti, JS Han Materials Science Forum 778, 997-1000, 2014 | 1 | 2014 |
| An improved SOI MESFET with triple-recessed drift region for electrical performance improvement AA Orouji, M Ghasemian, A Aminbeidokhti, S Rahmaninezhad 16th International Workshop on Physics of Semiconductor Devices 8549, 169-172, 2012 | 1 | 2012 |
| A novel N-MOSFET with air gaps in gate insulator for deep submicron applications AA Orouji, M Rahimian, A Aminbeidokhti 2011 International Conference on Electronic Devices, Systems and …, 2011 | | 2011 |
Ali Asghar OroujiProfessor, Semnan University在 semnan.ac.ir 的电子邮件经过验证
