| Nonpolar -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth A Rashidi, M Monavarian, A Aragon, A Rishinaramangalam, D Feezell IEEE Electron Device Letters 39 (4), 520-523, 2018 | 116 | 2018 |
| High-speed nonpolar InGaN/GaN LEDs for visible-light communication A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ... IEEE Photonics Technology Letters 29 (4), 381-384, 2017 | 80 | 2017 |
| Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes M Monavarian, A Rashidi, AA Aragon, SH Oh, AK Rishinaramangalam, ... Applied Physics Letters 112 (4), 2018 | 72 | 2018 |
| Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes A Rashidi, M Nami, M Monavarian, A Aragon, K DaVico, F Ayoub, ... Journal of Applied Physics 122 (3), 2017 | 67 | 2017 |
| Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors SM Mishkat-Ul-Masabih, AA Aragon, M Monavarian, TS Luk, DF Feezell Applied Physics Express 12 (3), 036504, 2019 | 64 | 2019 |
| Explanation of low efficiency droop in semipolar (202¯ 1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients M Monavarian, A Rashidi, A Aragon, SH Oh, M Nami, SP DenBaars, ... Optics express 25 (16), 19343-19353, 2017 | 39 | 2017 |
| Trade-off between bandwidth and efficiency in semipolar (202 1) InGaN/GaN single-and multiple-quantum-well light-emitting diodes M Monavarian, A Rashidi, AA Aragon, M Nami, SH Oh, SP DenBaars, ... Applied Physics Letters 112 (19), 2018 | 34 | 2018 |
| High-Voltage Regrown Nonpolar -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches M Monavarian, G Pickrell, AA Aragon, I Stricklin, MH Crawford, ... IEEE Electron Device Letters 40 (3), 387-390, 2019 | 31 | 2019 |
| Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements A Rashidi, M Monavarian, A Aragon, D Feezell Scientific Reports 9 (1), 19921, 2019 | 29 | 2019 |
| Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb N Rahimi, AA Aragon, OS Romero, DM Shima, TJ Rotter, SD Mukherjee, ... APL Materials 1 (6), 2013 | 23 | 2013 |
| Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes A Aragon, M Monavarian, I Stricklin, G Pickrell, M Crawford, A Allerman, ... physica status solidi (a) 217 (7), 1900757, 2020 | 16 | 2020 |
| High-speed nonpolar InGaN/GaN superluminescent diode with 2.5 GHz modulation bandwidth A Rashidi, AK Rishinaramangalam, AA Aragon, S Mishkat-Ul-Masabih, ... IEEE Photonics Technology Letters 32 (7), 383-386, 2020 | 15 | 2020 |
| Exclusion of injection efficiency as the primary cause of efficiency droop in semipolar (202¯ 1¯) InGaN/GaN light-emitting diodes A Rashidi, M Monavarian, A Aragon, D Feezell Applied Physics Letters 113 (3), 2018 | 15 | 2018 |
| Transmission electron microscopy-based analysis of electrically conductive surface defects in large area GaSb homoepitaxial diodes grown using molecular beam epitaxy OS Romero, AA Aragon, N Rahimi, D Shima, S Addamane, TJ Rotter, ... Journal of electronic materials 43, 926-930, 2014 | 15 | 2014 |
| Characterization of surface defects on Be-implanted GaSb N Rahimi, AA Aragon, DM Shima, C Hains, T Busani, O Lavrova, ... Journal of Vacuum Science & Technology B 32 (4), 2014 | 14 | 2014 |
| Investigation of interfacial impurities in m-plane GaN regrown pn junctions for high-power vertical electronic devices I Stricklin, M Monavarian, A Aragon, G Pickrell, M Crawford, A Allerman, ... Wide Bandgap Power and Energy Devices and Applications III 10754, 1075402, 2018 | 13 | 2018 |
| Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique N Rahimi, AA Aragon, OS Romero, DM Kim, NBJ Traynor, TJ Rotter, ... Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II …, 2013 | 11 | 2013 |
| Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes F Mirkhosravi, A Rashidi, J Gallagher, M Monavarian, A Aragon, K Ahn, ... AIP Advances 11 (2), 2021 | 7 | 2021 |
| GaSb thermophotovoltaics: current challenges and solutions N Rahimi, DJ Herrera, A Aragon, DM Shima, OS Romero, TJ Rotter, ... Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV …, 2015 | 6 | 2015 |
| Ultra-low resistance NiGeAu and PdGeAu ohmic contacts on N-GaSb grown on GaAs N Rahimi, AA Aragon, OS Romero, DM Shima, TJ Rotter, G Balakrishnan, ... 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2123-2126, 2013 | 6 | 2013 |
Daniel FeezellUniversity of New Mexico在 unm.edu 的电子邮件经过验证
