Coaxial InxGa1–xN/GaN Multiple Quantum Well Nanowire Arrays on Si(111) Substrate for High-Performance Light-Emitting Diodes YH Ra, R Navamathavan, JH Park, CR Lee Nano letters 13 (8), 3506-3516, 2013 | 117 | 2013 |
A review of the growth, doping, and applications of Beta-Ga2O3 thin films M Razeghi, JH Park, R McClintock, D Pavlidis, FH Teherani, DJ Rogers, ... oxide-based materials and devices IX 10533, 21-44, 2018 | 76 | 2018 |
High-Quality Uniaxial InxGa1–xN/GaN Multiple Quantum Well (MQW) Nanowires (NWs) on Si(111) Grown by Metal-Organic Chemical Vapor Deposition … YH Ra, R Navamathavan, JH Park, CR Lee ACS applied materials & interfaces 5 (6), 2111-2117, 2013 | 61 | 2013 |
Strain-Induced Metastable Phase Stabilization in Ga2O3 Thin Films Y Xu, JH Park, Z Yao, C Wolverton, M Razeghi, J Wu, VP Dravid ACS applied materials & interfaces 11 (5), 5536-5543, 2019 | 54 | 2019 |
III-nitride nanowires for solar light harvesting: A review U Chatterjee, JH Park, DY Um, CR Lee Renewable and Sustainable Energy Reviews 79, 1002-1015, 2017 | 46 | 2017 |
Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD JH Park, R McClintock, M Razeghi Semiconductor Science and Technology 34 (8), 08LT01, 2019 | 45 | 2019 |
High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3 J Bae, DW Jeon, JH Park, J Kim Journal of Vacuum Science & Technology A 39 (3), 2021 | 29 | 2021 |
MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire JH Park, R McClintock, A Jaud, A Dehzangi, M Razeghi Applied Physics Express 12 (9), 095503, 2019 | 28 | 2019 |
Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition S Kang, A Mandal, JH Chu, JH Park, SY Kwon, CR Lee Scientific reports 5 (1), 10808, 2015 | 28 | 2015 |
Self-powered solar-blind α-Ga2O3 thin-film UV-C photodiode grown by halide vapor-phase epitaxy J Bae, JH Park, DW Jeon, J Kim APL Materials 9 (10), 2021 | 24 | 2021 |
Highly uniform characteristics of GaN nanorods grown on Si (111) by metalorganic chemical vapor deposition YH Ra, R Navamathavan, JH Park, KY Song, YM Lee, DW Kim, BB Jun, ... Japanese Journal of Applied Physics 49 (9R), 091003, 2010 | 22 | 2010 |
A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure JH Park, R Nandi, JK Sim, DY Um, S Kang, JS Kim, CR Lee RSC advances 8 (37), 20585-20592, 2018 | 21 | 2018 |
Hydrogen generation using non-polar coaxial InGaN/GaN multiple quantum well structure formed on hollow n-GaN nanowires JH Park, A Mandal, S Kang, U Chatterjee, JS Kim, BG Park, MD Kim, ... Scientific Reports 6 (1), 31996, 2016 | 19 | 2016 |
Radial growth behavior and characteristics of m-plane In 0.16 Ga 0.84 N/GaN MQW nanowires by MOCVD YH Ra, R Navamathavan, JH Park, CR Lee CrystEngComm 15 (10), 1874-1881, 2013 | 19 | 2013 |
Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition C Jia, DW Jeon, J Xu, X Yi, JH Park, Y Zhang Nanomaterials 10 (6), 1031, 2020 | 16 | 2020 |
Growth behavior of GaN epilayers on Si (111) grown by GaN nanowires assisted epitaxial lateral overgrowth BR Yeom, R Navamathavan, JH Park, YH Ra, CR Lee CrystEngComm 14 (17), 5558-5563, 2012 | 16 | 2012 |
Correlation of pulsed gas flow on Si-doped α-Ga2O3 epilayer grown by halide vapor phase epitaxy H Son, Y Choi, JH Park, B Ryu, DW Jeon ECS Journal of Solid State Science and Technology 9 (5), 055005, 2020 | 13 | 2020 |
Vertically p–n-junctioned GaN nano-wire array diode fabricated on Si (111) using MOCVD JH Park, MH Kim, S Kissinger, CR Lee Nanoscale 5 (7), 2959-2966, 2013 | 13 | 2013 |
H trapping at the metastable cation vacancy in α-Ga2O3 and α-Al2O3 A Venzie, A Portoff, M Stavola, WB Fowler, J Kim, DW Jeon, JH Park, ... Applied Physics Letters 120 (19), 2022 | 12 | 2022 |
Single β-Ga2O3 nanowire based lateral FinFET on Si S Xu, L Liu, G Qu, X Zhang, C Jia, S Wu, Y Ma, YJ Lee, G Wang, JH Park, ... Applied Physics Letters 120 (15), 2022 | 11 | 2022 |