| Intrinsic two-dimensional ferroelectricity with dipole locking J Xiao, H Zhu, Y Wang, W Feng, Y Hu, A Dasgupta, Y Han, Y Wang, ... Physical review letters 120 (22), 227601, 2018 | 406 | 2018 |
| A dual-band multilayer InSe self-powered photodetector with high performance induced by surface plasmon resonance and asymmetric Schottky junction M Dai, H Chen, R Feng, W Feng, Y Hu, H Yang, G Liu, X Chen, J Zhang, ... ACS nano 12 (8), 8739-8747, 2018 | 229 | 2018 |
| Ultrafast and sensitive self-powered photodetector featuring self-limited depletion region and fully depleted channel with van der Waals contacts M Dai, H Chen, F Wang, M Long, H Shang, Y Hu, W Li, C Ge, J Zhang, ... ACS nano 14 (7), 9098-9106, 2020 | 144 | 2020 |
| Robust piezo-phototronic effect in multilayer γ-InSe for high-performance self-powered flexible photodetectors M Dai, H Chen, F Wang, Y Hu, S Wei, J Zhang, Z Wang, T Zhai, PA Hu ACS nano 13 (6), 7291-7299, 2019 | 129 | 2019 |
| Atomically thin hexagonal boron nitride and its heterostructures J Zhang, B Tan, X Zhang, F Gao, Y Hu, L Wang, X Duan, Z Yang, PA Hu Advanced Materials 33 (6), 2000769, 2021 | 106 | 2021 |
| A mixed-dimensional 1D Se–2D InSe van der Waals heterojunction for high responsivity self-powered photodetectors H Shang, H Chen, M Dai, Y Hu, F Gao, H Yang, B Xu, S Zhang, B Tan, ... Nanoscale Horizons 5 (3), 564-572, 2020 | 97 | 2020 |
| High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi2O2S Nanosheets X Yang, L Qu, F Gao, Y Hu, H Yu, Y Wang, M Cui, Y Zhang, Z Fu, Y Huang, ... ACS Applied Materials & Interfaces 14 (5), 7175-7183, 2022 | 88 | 2022 |
| Enhanced Piezoelectric Effect Derived from Grain Boundary in MoS2 Monolayers M Dai, W Zheng, X Zhang, S Wang, J Lin, K Li, Y Hu, E Sun, J Zhang, ... Nano letters 20 (1), 201-207, 2019 | 80 | 2019 |
| Ultralow Power Optical Synapses Based on MoS2 Layers by Indium‐Induced Surface Charge Doping for Biomimetic Eyes Y Hu, M Dai, W Feng, X Zhang, F Gao, S Zhang, B Tan, J Zhang, Y Shuai, ... Advanced Materials 33 (52), 2104960, 2021 | 74 | 2021 |
| Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets W Feng, F Gao, Y Hu, M Dai, H Liu, L Wang, PA Hu ACS applied materials & interfaces 10 (33), 27584-27588, 2018 | 59 | 2018 |
| Hollow spherical nanoshell arrays of 2D layered semiconductor for high‐performance photodetector device X Chen, H Yang, G Liu, F Gao, M Dai, Y Hu, H Chen, W Cao, PA Hu, ... Advanced Functional Materials 28 (8), 1705153, 2018 | 58 | 2018 |
| High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In2Se3 nanosheets W Feng, F Gao, Y Hu, M Dai, H Li, L Wang, PA Hu Nanotechnology 29 (44), 445205, 2018 | 57 | 2018 |
| An efficient WSe 2/Co 0.85 Se/graphene hybrid catalyst for electrochemical hydrogen evolution reaction Y Huang, Z Ma, Y Hu, D Chai, Y Qiu, G Gao, PA Hu RSC advances 6 (57), 51725-51731, 2016 | 54 | 2016 |
| Multilayer InSe–Te van der waals heterostructures with an ultrahigh rectification ratio and ultrasensitive photoresponse F Qin, F Gao, M Dai, Y Hu, M Yu, L Wang, W Feng, B Li, PA Hu ACS applied materials & interfaces 12 (33), 37313-37319, 2020 | 50 | 2020 |
| High‐Performance van der Waals Metal‐Insulator‐Semiconductor Photodetector Optimized with Valence Band Matching F Gao, H Chen, W Feng, Y Hu, H Shang, B Xu, J Zhang, CY Xu, PA Hu Advanced Functional Materials 31 (35), 2104359, 2021 | 49 | 2021 |
| Intrinsic dipole coupling in 2D van der Waals ferroelectrics for gate‐controlled switchable rectifier M Dai, K Li, F Wang, Y Hu, J Zhang, T Zhai, B Yang, Y Fu, W Cao, D Jia, ... Advanced Electronic Materials 6 (2), 1900975, 2020 | 38 | 2020 |
| Shape evolution of two dimensional hexagonal boron nitride single domains on Cu/Ni alloy and its applications in ultraviolet detection H Yang, L Wang, F Gao, M Dai, Y Hu, H Chen, J Zhang, Y Qiu, Y Zhou, ... Nanotechnology 30 (24), 245706, 2019 | 37 | 2019 |
| Synchronous Enhancement for Responsivity and Response Speed in In2Se3 Photodetector Modulated by Piezoresistive Effect W Li, M Dai, Y Hu, H Chen, X Zhu, Q Yang, PA Hu ACS applied materials & interfaces 11 (50), 47098-47105, 2019 | 35 | 2019 |
| Temperature-dependent growth of few layer β-InSe and α-In2Se3 single crystals for optoelectronic device Y Hu, W Feng, M Dai, H Yang, X Chen, G Liu, S Zhang, PA Hu Semiconductor Science and Technology 33 (12), 125002, 2018 | 34 | 2018 |
| Synthesis of high-quality multilayer hexagonal boron nitride films on Au foils for ultrahigh rejection ratio solar-blind photodetection B Tan, H Yang, Y Hu, F Gao, L Wang, M Dai, S Zhang, H Shang, H Chen, ... ACS applied materials & interfaces 12 (25), 28351-28359, 2020 | 32 | 2020 |
Mingjin Dai (戴明金)Nanyang Technological University在 ntu.edu.sg 的电子邮件经过验证
