| Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy I Moussa, H Fitouri, A Rebey, B El Jani Thin Solid Films 516 (23), 8372-8376, 2008 | 69 | 2008 |
| Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy Z Chine, H Fitouri, I Zaied, A Rebey, B El Jani Semiconductor Science and Technology 25 (6), 065009, 2010 | 63 | 2010 |
| Effect of thermal annealing on structural and optical properties of the GaAs0. 963Bi0. 037 alloy I Moussa, H Fitouri, Z Chine, A Rebey, B El Jani Semiconductor science and technology 23 (12), 125034, 2008 | 56 | 2008 |
| AP-MOVPE of thin GaAs1− xBix alloys H Fitouri, I Moussa, A Rebey, A Fouzri, B El Jani Journal of crystal growth 295 (2), 114-118, 2006 | 54 | 2006 |
| Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction H Fitouri, I Moussa, A Rebey, B El Jani Microelectronic engineering 88 (4), 476-479, 2011 | 41 | 2011 |
| Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys H Fitouri, Y Essouda, I Zaied, A Rebey, B El Jani Optical Materials 42, 67-71, 2015 | 37 | 2015 |
| Surface analysis of different oriented GaAs substrates annealed under bismuth flow H Fitouri, I Moussa, A Rebey, B El Jani Journal of crystal growth 300 (2), 347-352, 2007 | 35 | 2007 |
| Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy Z Chine, H Fitouri, I Zaied, A Rebey, B El Jani Journal of crystal growth 330 (1), 35-38, 2011 | 30 | 2011 |
| Spectroscopic ellipsometry study of GaAs1− xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy N Ben Sedrine, I Moussa, H Fitouri, A Rebey, B El Jani, R Chtourou Applied Physics Letters 95 (1), 2009 | 22 | 2009 |
| Bismuth catalyzed growth of GaAsBi nanowires by metalorganic vapor phase epitaxy Y Essouda, H Fitouri, R Boussaha, N Elayech, A Rebey, B El Jani Materials Letters 152, 298-301, 2015 | 21 | 2015 |
| Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy R Boussaha, H Fitouri, A Rebey, B El Jani Applied surface science 291, 40-44, 2014 | 17 | 2014 |
| GaN property evolution at all stages of MOVPE Si/N treatment growth I Halidou, Z Benzarti, H Fitouri, W Fathallah, BE Jani physica status solidi c 4 (1), 129-132, 2007 | 15 | 2007 |
| Thermodynamic study of the ternary system gallium‐arsenic‐bismuth N Elayech, H Fitouri, Y Essouda, A Rebey, B El Jani physica status solidi (c) 12 (1‐2), 138-141, 2015 | 14 | 2015 |
| Laser‐reflectometry monitoring of the GaN growth by MOVPE using SiN treatment: study and simulation H Fitouri, Z Benzarti, I Halidou, T Boufaden, BE Jani physica status solidi (a) 202 (13), 2467-2473, 2005 | 14 | 2005 |
| High‐resolution X‐ray diffraction of III–V semiconductor thin films H Fitouri, MM Habchi, A Rebey X-ray Scattering 159, 2017 | 12 | 2017 |
| Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy C Bilel, H Fitouri, I Zaied, A Bchetnia, A Rebey, B El Jani Materials Science in Semiconductor Processing 31, 100-105, 2015 | 11 | 2015 |
| Atmospheric-pressure metal–organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates I Zaied, H Fitouri, Z Chine, A Rebey, B El Jani Journal of Physics and Chemistry of solids 75 (2), 244-251, 2014 | 11 | 2014 |
| Photoluminescence of GaAsBi/GaAs quantum dots grown by metalorganic vapor phase epitaxy H Fitouri, K Chakir, Z Chine, A Rebey, B El Jani Materials Letters 152, 45-47, 2015 | 9 | 2015 |
| A systematic methodology for the analysis of multicomponent photoreflectance spectra applied to GaAsBi/GaAs structure I Guizani, H Fitouri, I Zaied, A Rebey Physics of the Solid State 62, 1060-1066, 2020 | 7 | 2020 |
| Photoreflectance analysis of annealed vanadium-doped GaAs thin films grown by metalorganic vapor phase epitaxy H Fitouri, C Bilel, I Zaied, A Bchetnia, A Rebey, B El Jani Solid State Communications 217, 21-24, 2015 | 7 | 2015 |
