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Zichao Ma
Zichao Ma
在 connect.ust.hk 的电子邮件经过验证
标题
引用次数
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年份
Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces
C Zhou, S Zhang, Z Lv, Z Ma, C Yu, Z Feng, M Chan
npj 2D Materials and Applications 4 (1), 46, 2020
722020
Low‐power complementary inverter with negative capacitance 2D semiconductor transistors
J Wang, X Guo, Z Yu, Z Ma, Y Liu, Z Lin, M Chan, Y Zhu, X Wang, Y Chai
Advanced Functional Materials 30 (46), 2003859, 2020
682020
Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope
J Wang, L Cai, J Chen, X Guo, Y Liu, Z Ma, Z Xie, H Huang, M Chan, ...
Science Advances 7 (44), eabf8744, 2021
462021
Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance
J Wang, X Guo, Z Yu, Z Ma, Y Liu, M Chan, Y Zhu, X Wang, Y Chai
2018 IEEE International Electron Devices Meeting (IEDM), 22.3. 1-22.3. 4, 2018
292018
Control of hexagonal boron nitride dielectric thickness by single layer etching
Z Ma, C Prawoto, Z Ahmed, Y Xiao, L Zhang, C Zhou, M Chan
Journal of Materials Chemistry C 7 (21), 6273-6278, 2019
202019
Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations
Z Ahmed, Q Shi, Z Ma, L Zhang, H Guo, M Chan
IEEE Electron Device Letters 41 (1), 171-174, 2019
162019
Biomimetic olfactory chips based on large-scale monolithically integrated nanotube sensor arrays
C Wang, Z Chen, CLJ Chan, Z Wan, W Ye, W Tang, Z Ma, B Ren, ...
Nature Electronics 7 (2), 157-167, 2024
122024
Low temperature synthesis of high-density carbon nanotubes on insulating substrate
Y Xiao, Z Ahmed, Z Ma, C Zhou, L Zhang, M Chan
Nanomaterials 9 (3), 473, 2019
112019
Robust Lead‐Free Perovskite Nanowire Array‐Based Artificial Synapses Exemplifying Gestalt Principle of Closure via a Letter Recognition Scheme
S Poddar, Z Chen, Z Ma, Y Zhang, CLJ Chan, B Ren, Q Zhang, D Zhang, ...
Advanced Intelligent Systems 4 (7), 2200065, 2022
102022
High Current Nb-Doped P-Channel MoS₂ Field-Effect Transistor Using Pt Contact
Z Ma, L Zhang, C Zhou, M Chan
IEEE Electron Device Letters 42 (3), 343-346, 2021
102021
Ultralow- Dielectric With Structured Pores for Interconnect Delay Reduction
Y Xiao, Z Ma, C Prawoto, C Zhou, M Chan
IEEE Transactions on Electron Devices 67 (5), 2071-2075, 2020
92020
Complementary Two-Dimensional (2-D) FET Technology With MoS2/hBN/Graphene Stack
CJ Estrada, Z Ma, M Chan
IEEE Electron Device Letters 42 (12), 1890-1893, 2021
82021
Synthesis of vertical carbon nanotube interconnect structures using CMOS-compatible catalysts
Z Ma, S Zhou, C Zhou, Y Xiao, S Li, M Chan
Nanomaterials 10 (10), 1918, 2020
82020
Interconnect technology with h-BN-capped air-gaps
C Prawoto, Z Ma, Y Xiao, S Raju, C Zhou, M Chan
IEEE Electron Device Letters 40 (11), 1876-1879, 2019
82019
A vertically aligned multiwall carbon nanotube-based humidity sensor with fast response, low hysteresis, and high repeatability
X Wang, Y Deng, X Chen, Z Ma, Y Wang, W Xu, H Yu
IEEE Sensors Letters 5 (11), 1-4, 2021
72021
On‐Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors
Z Ma, CJ Estrada, K Gong, L Zhang, M Chan
Advanced Electronic Materials 8 (10), 2200480, 2022
62022
Image processing with a multi-level ultra-fast three dimensionally integrated perovskite nanowire array
S Poddar, Y Zhang, Z Chen, Z Ma, Y Fu, Y Ding, CLJ Chan, Q Zhang, ...
Nanoscale Horizons 7 (7), 759-769, 2022
62022
Air-gap technology with a large void-fraction for global interconnect delay reduction
C Prawoto, Z Ma, Y Xiao, S Raju, M Chan
IEEE Transactions on Electron Devices 68 (10), 5078-5084, 2021
62021
Complementary Two-Dimensional (2-D) MoS2 FET Technology
CJ Estrada, Z Ma, M Chan
ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021
32021
Vertically aligned carbon nanotubes for fast humidity sensing
ZC Ma, XY Wang, LN Zhang
2020 IEEE 15th International Conference on Nano/Micro Engineered and …, 2020
22020
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