| Field-effect transistors made from solution-grown two-dimensional tellurene Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard III, ... Nature Electronics 1 (4), 228-236, 2018 | 732 | 2018 |
| Steep-slope hysteresis-free negative capacitance MoS2 transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ... Nature nanotechnology 13 (1), 24-28, 2018 | 513 | 2018 |
| A ferroelectric semiconductor field-effect transistor M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ... Nature Electronics 2 (12), 580-586, 2019 | 422 | 2019 |
| One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport Y Du, G Qiu, Y Wang, M Si, X Xu, W Wu, PD Ye Nano Letters, 2017 | 330 | 2017 |
| High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide IEEE Electron Device Letters 38 (1), 103-106, 2016 | 313 | 2016 |
| Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure M Si, PY Liao, G Qiu, Y Duan, PD Ye Acs Nano 12 (7), 6700-6705, 2018 | 305 | 2018 |
| Tellurene: its physical properties, scalable nanomanufacturing, and device applications W Wu, G Qiu, Y Wang, R Wang, P Ye Chemical Society Reviews 47 (19), 7203-7212, 2018 | 265 | 2018 |
| β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect H Zhou, K Maize, G Qiu, A Shakouri, PD Ye Applied Physics Letters 111 (9), 2017 | 228 | 2017 |
| Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications J Qin, G Qiu, J Jian, H Zhou, L Yang, A Charnas, DY Zemlyanov, CY Xu, ... ACS nano 11 (10), 10222-10229, 2017 | 220 | 2017 |
| Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes JK Qin, PY Liao, M Si, S Gao, G Qiu, J Jian, Q Wang, SQ Zhang, S Huang, ... Nature electronics 3 (3), 141-147, 2020 | 153 | 2020 |
| Al2O3/ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing H Zhou, S Alghmadi, M Si, G Qiu, DY Peide IEEE Electron Device Letters 37 (11), 1411-1414, 2016 | 140 | 2016 |
| Thermoelectric Performance of 2D Tellurium with Accumulation Contacts G Qiu, S Huang, M Segovia, PK Venuthurumilli, Y Wang, W Wu, X Xu, ... Nano Letters 19 (3), 1955–1962, 2019 | 99 | 2019 |
| Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5 G Qiu, Y Du, A Charnas, H Zhou, S Jin, Z Luo, DY Zemlyanov, X Xu, ... Nano letters 16 (12), 7364-7369, 2016 | 95 | 2016 |
| Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene G Qiu, C Niu, Y Wang, M Si, Z Zhang, W Wu, PD Ye Nature Nanotechnology 15 (7), 585-591, 2020 | 94 | 2020 |
| Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene G Qiu, Y Wang, Y Nie, Y Zheng, K Cho, W Wu, PD Ye Nano Letters 18 (9), 5760–5767, 2018 | 82 | 2018 |
| Epitaxial Growth of 1D Atomic Chain Based Se Nanoplates on Monolayer ReS2 for High‐Performance Photodetectors JK Qin, G Qiu, W He, J Jian, MW Si, YQ Duan, A Charnas, DY Zemlyanov, ... Advanced Functional Materials 28 (48), 1806254, 2018 | 56 | 2018 |
| Data-driven and probabilistic learning of the process-structure-property relationship in solution-grown tellurene for optimized nanomanufacturing of high-performance … Y Wang, RSB Ferreira, R Wang, G Qiu, G Li, Y Qin, DY Peide, A Sabbaghi, ... Nano Energy 57, 480-491, 2019 | 54 | 2019 |
| Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets G Jnawali, Y Xiang, SM Linser, IA Shojaei, R Wang, G Qiu, C Lian, ... Nature communications 11 (1), 3991, 2020 | 53 | 2020 |
| The resurrection of tellurium as an elemental two-dimensional semiconductor G Qiu, A Charnas, C Niu, Y Wang, W Wu, PD Ye npj 2D Materials and Applications 6 (1), 17, 2022 | 51 | 2022 |
| Imaging carrier inhomogeneities in ambipolar tellurene field effect transistors S Berweger, G Qiu, Y Wang, B Pollard, KL Genter, R Tyrrell-Ead, ... Nano letters 19 (2), 1289-1294, 2019 | 44 | 2019 |
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue University在 purdue.edu 的电子邮件经过验证
