| Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate H Sun, S Mitra, RC Subedi, Y Zhang, W Guo, J Ye, MK Shakfa, TK Ng, ... Advanced Functional Materials 29 (48), 1905445, 2019 | 152 | 2019 |
| Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes J Kou, CC Shen, H Shao, J Che, X Hou, C Chu, K Tian, Y Zhang, ... Optics express 27 (12), A643-A653, 2019 | 130 | 2019 |
| InGaN/GaN light-emitting diode with a polarization tunnel junction ZH Zhang, S Tiam Tan, Z Kyaw, Y Ji, W Liu, Z Ju, N Hasanov, X Wei Sun, ... Applied Physics Letters 102 (19), 2013 | 123 | 2013 |
| Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes ZH Zhang, SW Huang Chen, Y Zhang, L Li, SW Wang, K Tian, C Chu, ... Acs Photonics 4 (7), 1846-1850, 2017 | 119 | 2017 |
| Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures L Wang, W Liu, Y Zhang, ZH Zhang, ST Tan, X Yi, G Wang, X Sun, H Zhu, ... Nano Energy 12, 419-436, 2015 | 104 | 2015 |
| On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer C Chu, K Tian, J Che, H Shao, J Kou, Y Zhang, Y Li, M Wang, Y Zhu, ... Optics express 27 (12), A620-A628, 2019 | 87 | 2019 |
| Nearly efficiency-droop-free AlGaN-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency ZH Zhang, SW Huang Chen, C Chu, K Tian, M Fang, Y Zhang, W Bi, ... Nanoscale research letters 13, 1-7, 2018 | 86 | 2018 |
| Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers ZH Zhang, W Liu, Z Ju, S Tiam Tan, Y Ji, Z Kyaw, X Zhang, L Wang, ... Applied Physics Letters 104 (24), 2014 | 83 | 2014 |
| Orange to red, emission-tunable Mn-doped two-dimensional perovskites with high luminescence and stability C Sun, Z Gao, Y Deng, H Liu, L Wang, S Su, P Li, H Li, Z Zhang, W Bi ACS applied materials & interfaces 11 (37), 34109-34116, 2019 | 76 | 2019 |
| One stone, two birds: high-efficiency blue-emitting perovskite nanocrystals for LED and security ink applications C Sun, Z Gao, H Liu, L Wang, Y Deng, P Li, H Li, ZH Zhang, C Fan, W Bi Chemistry of Materials 31 (14), 5116-5123, 2019 | 74 | 2019 |
| Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes ZH Zhang, J Kou, SWH Chen, H Shao, J Che, C Chu, K Tian, Y Zhang, ... Photonics Research 7 (4), B1-B6, 2019 | 70 | 2019 |
| On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes ZH Zhang, ST Tan, Z Ju, W Liu, Y Ji, Z Kyaw, Y Dikme, XW Sun, HV Demir Journal of Display Technology 9 (4), 226-233, 2012 | 63 | 2012 |
| Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer ZH Zhang, ST Tan, W Liu, Z Ju, K Zheng, Z Kyaw, Y Ji, N Hasanov, ... Optics express 21 (4), 4958-4969, 2013 | 61 | 2013 |
| High-efficiency all-inorganic full-colour quantum dot light-emitting diodes X Yang, ZH Zhang, T Ding, N Wang, G Chen, C Dang, HV Demir, XW Sun Nano energy 46, 229-233, 2018 | 59 | 2018 |
| Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films TH Flemban, MC Sequeira, Z Zhang, S Venkatesh, E Alves, K Lorenz, ... Journal of Applied Physics 119 (6), 2016 | 56 | 2016 |
| On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes ZH Zhang, L Li, Y Zhang, F Xu, Q Shi, B Shen, W Bi Optics express 25 (14), 16550-16559, 2017 | 52 | 2017 |
| On the hole injection for III-nitride based deep ultraviolet light-emitting diodes L Li, Y Zhang, S Xu, W Bi, ZH Zhang, HC Kuo Materials 10 (10), 1221, 2017 | 51 | 2017 |
| A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs S Hang, CM Chuang, Y Zhang, C Chu, K Tian, Q Zheng, T Wu, Z Liu, ... Journal of Physics D: Applied Physics 54 (15), 153002, 2021 | 50 | 2021 |
| Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers ZG Ju, W Liu, ZH Zhang, ST Tan, Y Ji, ZB Kyaw, XL Zhang, SP Lu, ... Applied Physics Letters 102 (24), 2013 | 49 | 2013 |
| Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier Y Ji, ZH Zhang, ST Tan, ZG Ju, Z Kyaw, N Hasanov, W Liu, XW Sun, ... Optics letters 38 (2), 202-204, 2013 | 47 | 2013 |
Hilmi Volkan DemirBilkent University UNAM, Turkey, and NTU Singapore在 bilkent.edu.tr 的电子邮件经过验证
