| Self-powered room temperature broadband infrared photodetector based on MoSe2/germanium heterojunction with 35 A/W responsivity at 1550 nm V Dhyani, M Das, W Uddin, PK Muduli, S Das Applied Physics Letters 114 (12), 2019 | 48 | 2019 |
| Nanolayered black arsenic–silicon lateral heterojunction photodetector for visible to mid-infrared wavelengths Nidhi, A Jakhar, W Uddin, J Kumar, T Nautiyal, S Das ACS Applied Nano Materials 3 (9), 9401-9409, 2020 | 18 | 2020 |
| Highly Responsive Metal Oxide (V2O5)-Based NEMS Pirani Gauge for In-Situ Hermeticity Monitoring M Garg, DS Arya, S Sharma, S Kumar, W Uddin, S Das, Y Chiu, P Singh Journal of Microelectromechanical Systems 30 (3), 340-342, 2021 | 15 | 2021 |
| Temperature dependent current transport behavior of improved low noise NiGe schottky diode for low leakage Ge-MOSFET W UDDIN, SP Mohd, SMSD , Veerendra Dhyani3 Semiconductor Science and Technology, 2019 | 8 | 2019 |
| Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET W Uddin, YM Georgiev, S Maity, S Das Journal of Physics D: Applied Physics 50 (36), 365104, 2017 | 5 | 2017 |
| A differential OTP memory based highly unique and reliable PUF at 180 nm technology node P Malviya, S Sadana, A Lele, K Priyadarshi, A Sharma, A Naik, L Bandhu, ... Solid-State Electronics 188, 108207, 2022 | 3 | 2022 |
| Silicon-based qubit technology: progress and future prospects W Uddin, B Khan, S Dewan, S Das Bulletin of Materials Science 45 (1), 46, 2022 | 2 | 2022 |
| Photo-Induced Negative Differential Transconductance in Back-Gated Layered MoSe2/p-Ge Heterojunction Field Effect Transistors W Uddin, V Dhyani, G Ahmad, V Kumar, PK Muduli, S Das ACS Applied Electronic Materials 2 (6), 1567-1573, 2020 | 2 | 2020 |
| Resonant tunneling and hole transport behavior in low noise silicon tri-gate junctionless single hole transistor W Uddin, S Maity, V Dhyani, G Ahmad, YM Georgiev, S Das Semiconductor Science and Technology 35 (6), 065011, 2020 | 1 | 2020 |
| Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories S Lashkare, W Uddin, K Priyadarshi, U Ganguly Proceedings of the National Academy of Sciences, India Section A: Physical …, 2023 | | 2023 |
| Gate Voltage Tunable Temperature Coefficient of Resistance of WSe2 for Thermal Sensing Applications S Saxena, W Uddin, S Sharma, S Das, VR Rao IEEE Transactions on Electron Devices 70 (5), 2600-2605, 2023 | | 2023 |
| Five-Fold Reduction in RESET Energy Consumption by Nitrogen Doping in Phase Change Memory W Uddin, AK Agrawal, P Meihar, A Singh, T Malviya, R Ranjan, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | | 2023 |
| Indigenous Fab-Lab Hybrid Device Integration for Phase Change Memory for In-Memory Computing W Uddin, A Bende, A Singh, T Malviya, R Ranjan, K Priyadarshi, ... International Symposium on VLSI Design and Test, 468-477, 2022 | | 2022 |
| Low temperature charge transport characteristics in nano dimensional material field effect transistors W Uddin Delhi, 2021 | | 2021 |
| Carrier Transport In Multilayer n-MoSe2 And p-Germanium Heterojunction Back Gated Field Effect Transistors W Uddin, V Dhyani, G Ahmad, S Das 2020 International Symposium on VLSI Technology, Systems and Applications …, 2020 | | 2020 |
| Graphene oxide based hybrid nanostructures with ZnO thin films and nanorods R Nandi, VD Botcha, G Singh, W Uddin, D Singh, SS Talwar, ... AIP Conference Proceedings 1665 (1), 2015 | | 2015 |
| 334 HF Under-Etching Prevention for Advanced THz Micromachined Waveguide Devices X. Zhao and J. Oberhammer 337 A 100 nm Thick, 32 kHz X-Cut Lithium Niobate Piezoelectric … P Simeoni, Z Schaffer, G Piazza, H Monitoring, M Garg, DS Arya, ... | | |
Samaresh Das, Prof.Indian institute of technology, Tyndall National Institute, Hitachi Cambridge Lab在 care.iitd.ac.in 的电子邮件经过验证
