| Sandwich method to grow high quality AlN by MOCVD I Demir, H Li, Y Robin, R McClintock, S Elagoz, M Razeghi Journal of Physics D: Applied Physics 51 (8), 085104, 2018 | 40 | 2018 |
| Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers MN Sharif, MA Khan, Q Wali, I Demir, F Wang, Y Liu Optics & Laser Technology 152, 108156, 2022 | 26 | 2022 |
| Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy İ Demir, Y Robin, R McClintock, S Elagoz, K Zekentes, M Razeghi physica status solidi (a) 214 (4), 1600363, 2017 | 22 | 2017 |
| Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111) I Altuntas, MN Kocak, G Yolcu, HF Budak, AE Kasapoğlu, S Horoz, E Gür, ... Materials Science in Semiconductor Processing 127, 105733, 2021 | 19 | 2021 |
| Optical and structural properties of In-rich InxGa1− xAs epitaxial layers on (1 0 0) InP for SWIR detectors B Smiri, MB Arbia, D Ilkay, F Saidi, Z Othmen, B Dkhil, A Ismail, E Sezai, ... Materials Science and Engineering: B 262, 114769, 2020 | 19 | 2020 |
| V/III ratio effects on high quality InAlAs for quantum cascade laser structures I Demir, S Elagoz Superlattices and Microstructures 104, 140-148, 2017 | 19 | 2017 |
| High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate Y Robin, K Ding, I Demir, R McClintock, S Elagoz, M Razeghi Materials Science in Semiconductor Processing 90, 87-91, 2019 | 17 | 2019 |
| Interruption time effects on InGaAs/InAlAs superlattices of quantum cascade laser structures grown by MOCVD I Demir, S Elagoz Superlattices and Microstructures 100, 723-729, 2016 | 17 | 2016 |
| Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs M Genç, V Sheremet, M Elçi, AE Kasapoğlu, İ Altuntaş, İ Demir, G Eğin, ... Superlattices and Microstructures 128, 9-13, 2019 | 14 | 2019 |
| The effects of two stages HT-GaN growth with different V/III ratios during 3D-2D transition I Altuntas, I Demir, AE Kasapoğlu, S Mobtakeri, E Gür, S Elagoz Journal of Physics D: Applied Physics 51, 035105, 2018 | 14 | 2018 |
| Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications I Demir, I Altuntas, B Bulut, M Ezzedini, Y Ergun, S Elagoz Semiconductor Science and Technology 33 (5), 055005, 2018 | 11 | 2018 |
| The hydrostatic pressure and temperature effects on the binding energy of magnetoexcitons in cylindrical quantum well wires P Baser, HD Karki, I Demir, S Elagoz Superlattices and Microstructures 63, 100-109, 2013 | 11 | 2013 |
| Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy I Simsek, G Yolcu, MN Koçak, K Pürlü, I Altuntas, I Demir Journal of Materials Science: Materials in Electronics 32, 25507–25515, 2021 | 10 | 2021 |
| AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn I Demir, Y Koçak, AE Kasapoğlu, M Razeghi, E Gür, S Elagoz Semiconductor Science and Technology 34 (7), 075028, 2019 | 10 | 2019 |
| Growth of InGaAs/InAlAs superlattices by MOCVD and precise thickness determination via HRXRD I Demir, S Elagoz Gazi University Journal of Science 29 (4), 947-951, 2016 | 10 | 2016 |
| In-situ and ex-situ face-to-face annealing of epitaxial AlN MN Koçak, KM Pürlü, İ Perkitel, İ Altuntaş, İ Demir Vacuum 203, 111284, 2022 | 9 | 2022 |
| The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN İ PERKİTEL, İ ALTUNTAS, İ DEMİR Gazi University Journal of Science 35 (1), 281-291, 2022 | 9 | 2022 |
| Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE KM Pürlü, MN Kocak, G Yolcu, I Perkitel, İ Altuntaş, I Demir Materials Science in Semiconductor Processing 142, 106464, 2022 | 8 | 2022 |
| Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas I Demir, I Altuntas, AE Kasapoğlu, S Mobtakeri, E Gür, S Elagoz Semiconductors 52 (16), 2030-2038, 2018 | 8 | 2018 |
| Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures I Demir, AE Kasapoğlu, HF Budak, E Gür, S Elagoz The European Physical Journal Applied Physics 90 (2), 20301, 2020 | 6 | 2020 |
ismail AltuntaşCumhuriyet University在 cumhuriyet.edu.tr 的电子邮件经过验证
