| Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices DP Kumah, JH Ngai, L Kornblum Advanced Functional Materials, 1901597, 2019 | 86 | 2019 |
| Solar hydrogen production using epitaxial SrTiO 3 on a GaAs photovoltaic L Kornblum, DP Fenning, J Faucher, J Hwang, A Boni, MG Han, ... Energy & Environmental Science 10 (1), 377-382, 2017 | 58 | 2017 |
| Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces I Krylov, L Kornblum, A Gavrilov, D Ritter, M Eizenberg Applied Physics Letters 100 (17), 173508, 2012 | 57 | 2012 |
| Integration of Self‐Assembled Epitaxial BiFeO3–CoFe2O4 Multiferroic Nanocomposites on Silicon Substrates DH Kim, NM Aimon, XY Sun, L Kornblum, F Walker, C Ahn, CA Ross Advanced Functional Materials 24 (37), 5889-5896, 2014 | 52 | 2014 |
| Band offsets and Fermi level pinning at metal-Al 2 O 3 interfaces L Kornblum, JA Rothschild, Y Kauffmann, R Brener, M Eizenberg Physical Review B 84 (15), 155317, 2011 | 39 | 2011 |
| A high density two-dimensional electron gas in an oxide heterostructure on Si (001) EN Jin, L Kornblum, DP Kumah, K Zou, CC Broadbridge, JH Ngai, ... APL Materials 2 (11), 116109, 2014 | 38 | 2014 |
| Self-assembled multiferroic epitaxial BiFeO 3–CoFe 2 O 4 nanocomposite thin films grown by RF magnetron sputtering TC Kim, S Ojha, G Tian, SH Lee, HK Jung, JW Choi, L Kornblum, ... Journal of Materials Chemistry C 6 (20), 5552-5561, 2018 | 37 | 2018 |
| Conductive Oxide Interfaces for Field Effect Devices L Kornblum Advanced Materials Interfaces 6 (15), 1900480, 2019 | 33 | 2019 |
| Urea oxidation electrocatalysis on nickel hydroxide: the role of disorder S Chakrabarty, I Offen-Polak, TY Burshtein, EM Farber, L Kornblum, ... Journal of Solid State Electrochemistry 25 (1), 159-171, 2021 | 30 | 2021 |
| Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers T Jaffe, N Felgen, L Gal, L Kornblum, JP Reithmaier, C Popov, ... Advanced Optical Materials 7 (2), 1800715, 2019 | 28 | 2019 |
| Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices L Kornblum, B Meyler, C Cytermann, S Yofis, J Salzman, M Eizenberg Applied Physics Letters 100 (6), 062907-062907-3, 2012 | 28 | 2012 |
| Single atomic layer ferroelectric on silicon M Dogan, S Fernandez-Pena, L Kornblum, Y Jia, DP Kumah, JW Reiner, ... Nano letters 18 (1), 241-246, 2018 | 27 | 2018 |
| A Three Component Self‐Assembled Epitaxial Nanocomposite Thin Film DH Kim, XY Sun, NM Aimon, JJ Kim, MJ Campion, HL Tuller, L Kornblum, ... Advanced Functional Materials 25 (20), 3091-3100, 2015 | 24 | 2015 |
| Epitaxial ferroelectric oxides on silicon with perspectives for future device applications M Spreitzer, D Klement, T Parkelj Potočnik, U Trstenjak, Z Jovanović, ... APL Materials 9 (4), 040701, 2021 | 23 | 2021 |
| Oxide 2D electron gases as a route for high carrier densities on (001) Si L Kornblum, EN Jin, DP Kumah, AT Ernst, CC Broadbridge, CH Ahn, ... Applied Physics Letters 106 (20), 201602, 2015 | 22 | 2015 |
| Composition and crystallography dependence of the work function: Experiment and calculations of Pt-Al alloys L Kornblum, P Shekhter, Y Slovatizky, Y Amouyal, M Eizenberg Physical Review B 86 (12), 125305, 2012 | 22 | 2012 |
| Ferroelectric Modulation of Surface Electronic States in BaTiO3 for Enhanced Hydrogen Evolution Activity P Abbasi, MR Barone, M de la Paz Cruz-Jáuregui, D Valdespino-Padilla, ... Nano Letters 22 (10), 4276-4284, 2022 | 21 | 2022 |
| Scalable Synthesis of the Transparent Conductive Oxide SrVO3 L Shoham, M Baskin, MG Han, Y Zhu, L Kornblum Advanced Electronic Materials, 1900584, 2019 | 21 | 2019 |
| Transport at the Epitaxial Interface between Germanium and Functional Oxides L Kornblum, MD Morales‐Acosta, EN Jin, CH Ahn, FJ Walker Advanced Materials Interfaces 2 (18), 2015 | 21 | 2015 |
| Effect of H on interface properties of Al2O3/In0. 53Ga0. 47As Z Liu, S Cui, P Shekhter, X Sun, L Kornblum, J Yang, M Eizenberg, ... Applied Physics Letters 99 (22), 222104, 2011 | 20 | 2011 |
Moshe EizenbergTechnion and Guangdong Technion- Israel Institute of Technology在 technion.ac.il 的电子邮件经过验证
