| Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy CW Liu, JJ Dai, SK Wu, NQ Diep, SH Huynh, TT Mai, HC Wen, CT Yuan, ... Scientific reports 10 (1), 12972, 2020 | 34 | 2020 |
| Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect … QH Luc, SP Cheng, PC Chang, HB Do, JH Chen, MTH Ha, SH Huynh, ... IEEE Electron Device Letters 37 (8), 974-977, 2016 | 27 | 2016 |
| First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2Ferroelectric Gate Stack QH Luc, CC Fan-Chiang, SH Huynh, P Huang, HB Do, MTH Ha, YD Jin, ... 2018 IEEE Symposium on VLSI Technology, 47-48, 2018 | 22 | 2018 |
| Screw-dislocation-driven growth mode in two dimensional GaSe on GaAs (001) substrates grown by molecular beam epitaxy NQ Diep, CW Liu, SK Wu, WC Chou, SH Huynh, EY Chang Scientific reports 9 (1), 17781, 2019 | 21 | 2019 |
| In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment QH Luc, KS Yang, JW Lin, CC Chang, HB Do, SH Huynh, MTH Ha, ... IEEE Electron Device Letters 39 (3), 339-342, 2018 | 20 | 2018 |
| Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition SH Huynh, MTH Ha, HB Do, QH Luc, HW Yu, EY Chang Applied Physics Letters 109 (10), 2016 | 16 | 2016 |
| Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application HB Do, QH Luc, MTH Ha, SH Huynh, TA Nguyen, C Hu, YC Lin, ... IEEE Electron Device Letters 38 (5), 552-555, 2017 | 11 | 2017 |
| Methods for extracting flat band voltage in the InGaAs high mobility materials HB Do, QH Luc, MTH Ha, SH Huynh, C Hu, YC Lin, EY Chang IEEE Electron Device Letters 37 (9), 1100-1103, 2016 | 10 | 2016 |
| Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery NQ Diep, SK Wu, CW Liu, SH Huynh, WC Chou, CM Lin, DZ Zhang, ... Scientific reports 11 (1), 19887, 2021 | 9 | 2021 |
| Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask JJ Dai, CW Liu, SK Wu, SH Huynh, JG Jiang, SA Yen, TT Mai, HC Wen, ... Coatings 11 (1), 16, 2020 | 9 | 2020 |
| Molecular beam epitaxy of two-dimensional GaTe nanostructures on GaAs (001) substrates: implication for near-infrared photodetection SH Huynh, NQ Diep, TV Le, SK Wu, CW Liu, DL Nguyen, HC Wen, ... ACS Applied Nano Materials 4 (9), 8913-8921, 2021 | 8 | 2021 |
| Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor … MTH Ha, SH Huynh, HB Do, TA Nguyen, QH Luc, EY Chang Materials Research Express 4 (8), 085901, 2017 | 7 | 2017 |
| Materials growth and band offset determination of Al2O3/In0. 15Ga0. 85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition SH Huynh, MTH Ha, HB Do, TA Nguyen, QH Luc, EY Chang Applied Physics Letters 110 (2), 2017 | 7 | 2017 |
| Growth of high-quality In0. 28Ga0. 72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal–oxide … SH Huynh, MTH Ha, HB Do, TA Nguyen, HW Yu, QH Luc, EY Chang Applied Physics Express 10 (7), 075505, 2017 | 6 | 2017 |
| Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47As HB Do, QH Luc, MTH Ha, SH Huynh, CC Hu, YC Lin, EY Chang IEEE Transactions on Electron Devices 63 (12), 4714-4719, 2016 | 6 | 2016 |
| Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices HB Do, QH Luc, MTH Ha, SH Huynh, TA Nguyen, YC Lin, EY Chang AIP Advances 7 (8), 2017 | 5 | 2017 |
| Monotonous alloying-driven band edge emission in two-dimensional hexagonal GaSe 1− x Te x semiconductors for visible to near-infrared photodetection NQ Diep, YX Chen, DL Nguyen, MN Duong, SK Wu, CW Liu, HC Wen, ... Journal of Materials Chemistry C 11 (5), 1772-1781, 2023 | 3 | 2023 |
| Entirely relaxed lattice-mismatched GaSb/GaAs/Si (001) heterostructure grown via metalorganic chemical vapor deposition MTH Ha, SH Huynh, HB Do, TA Nguyen, QH Luc, CT Lee, EY Chang Applied Physics Express 11 (5), 051202, 2018 | 3 | 2018 |
| Nonlinear dependence of X-ray diffraction peak broadening in InxGa1− xSb epitaxial layers on GaAs substrates SH Huynh, MTH Ha, HB Do, TA Nguyen, QH Luc, EY Chang Applied Physics Express 11 (4), 045503, 2018 | 3 | 2018 |
| The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition MTH Ha, SH Huynh, HB Do, CT Lee, QH Luc, EY Chang Thin Solid Films 669, 430-435, 2019 | 2 | 2019 |
Edward Yi changNational Chico Tung university在 mail.nctu.edu.tw 的电子邮件经过验证
