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Yeonwoo Kim
Yeonwoo Kim
在 snu.ac.kr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy
W Shin, KK Min, JH Bae, J Yim, D Kwon, Y Kim, J Yu, J Hwang, BG Park, ...
Nanoscale 14 (6), 2177-2185, 2022
362022
Ferroelectricity of pure HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application
KK Min, J Yu, Y Kim, CS Kim, T Jang, S Hwang, H Kim, JH Lee, D Kwon, ...
Applied Surface Science 573, 151566, 2022
212022
Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al2O3/HfO2/SiO2/Al2O3/SiO2/Si structure
YS Song, T Jang, KK Min, MH Baek, J Yu, Y Kim, JH Lee, BG Park
Japanese Journal of Applied Physics 59 (6), 061006, 2020
152020
Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO x-based metal-ferroelectric-insulator-semiconductor stack
KK Min, J Yu, Y Kim, JH Lee, D Kwon, BG Park
Nanotechnology 32 (49), 495203, 2021
142021
Lamination method for improved polarization-leakage current relation in HfO2-based metal/ferroelectric/insulator/semiconductor structure
Y Kim, KK Min, J Yu, D Kwon, BG Park
Semiconductor Science and Technology 37 (4), 045001, 2022
132022
A novel physical unclonable function (PUF) using 16× 16 pure-HfO x ferroelectric tunnel junction array for security applications
J Yu, KK Min, Y Kim, S Kim, S Hwang, TH Kim, C Kim, H Kim, JH Lee, ...
Nanotechnology 32 (48), 485202, 2021
132021
Synaptic device with high rectification ratio resistive switching and its impact on spiking neural network
CS Kim, T Kim, KK Min, Y Kim, S Kim, BG Park
IEEE Transactions on Electron Devices 68 (4), 1610-1615, 2021
72021
Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack
KK Min, SJ Kwon, Y Kim, J Yu, JH Lee, BG Park, D Kwon
Applied Physics Letters 120 (1), 2022
62022
Damage-Induced Ferroelectricity in HfOx-Based Thin Film
KK Min, HM Kim, Y Kim, C Kim, J Yu, JH Lee, BG Park, D Kwon
IEEE Electron Device Letters 43 (5), 713-716, 2022
42022
An Area Efficient Adaptive Neuron Circuit Exploiting Tunnel Field-Effect Transistor
Y Kim, T Kim, MH Beak, T Jang, YS Song, B Jeon, BG Park
대한전자공학회 학술대회, 71-73, 2019
32019
Neurons With Captive Synaptic Devices for Temperature Robust Spiking Neural Networks
K Park, S Kim, MH Baek, B Jeon, YW Kim, WY Choi
IEEE Electron Device Letters, 2023
22023
Neuron circuit, operating method thereof, and neuromorphic device including neuron circuit
YK Byung-gook Park
US Patent App. US20230135011A1, 2023
2023
뉴런 회로와 이의 동작 방법, 그리고, 뉴런 회로를 포함하는 뉴로모픽 장치
박병국김연우
KR Patent 10-2,521,702, 2023
2023
Investigation of Poly-Si TFT Based U-shaped Channel Synaptic Device
D Ryu, Y Kim, T Jang, S Song, B Jeon, BG Park
2022 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2022
2022
Analog-Digital Hybrid Neuron with Up/Down Counter for Neuromorphic System
Y Kim, B Jeon, K Park, BG Park
2022 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2022
2022
Guideline of optimum interfacial layers in metal-ferroelectric-insulator-semiconductor structure for gate stack and ferroelectric tunnel junction
J Yu, KK Min, Y Kim, D Kwon, BG Park
2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021
2021
Neuron Circuit with Improved Synaptic Current Summation Performance Using Ni / SiNx / n⁺-Si RRAM as Synaptic Devices
Y Kim, S Hwang, BG Park
대한전자공학회 학술대회, 36-40, 2020
2020
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