| Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures SA Mancini, SY Jang, Z Chen, D Kim, J Lynch, Y Liu, B Raghothamachar, ... 2022 IEEE International Reliability Physics Symposium (IRPS), P62-1-P62-6, 2022 | 14 | 2022 |
| Characterization of prismatic slip in PVT-grown AlN crystals S Hu, H Fang, Y Liu, H Peng, Q Cheng, Z Chen, R Dalmau, J Britt, ... Journal of Crystal Growth 584, 126548, 2022 | 10 | 2022 |
| Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray topographs under the condition of g· b= 0 and g· b× l= 0 H Peng, T Ailihumaer, F Fujie, Z Chen, B Raghothamachar, M Dudley Journal of Applied Crystallography 54 (2), 439-443, 2021 | 10 | 2021 |
| Quantitative analysis of dislocations in 4H-SiC wafers using synchrotron X-ray topography with ultra-high angular resolution H Peng, Z Chen, Y Liu, B Raghothamachar, X Huang, L Assoufid, ... Journal of Applied Crystallography 55 (3), 544-550, 2022 | 7 | 2022 |
| Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode Z Chen, Y Liu, H Peng, Q Cheng, S Hu, B Raghothamachar, M Dudley, ... ECS Journal of Solid State Science and Technology 11 (6), 065003, 2022 | 6 | 2022 |
| Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography Y Liu, Z Chen, S Hu, H Peng, Q Cheng, B Raghothamachar, M Dudley Journal of Crystal Growth 583, 126559, 2022 | 6 | 2022 |
| Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals S Hu, Y Liu, Q Cheng, Z Chen, X Tong, B Raghothamachar, M Dudley Journal of Crystal Growth 628, 127542, 2024 | 5 | 2024 |
| Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms ZY Chen, HY Peng, Y Liu, QY Cheng, S Hu, B Raghothamachar, ... Materials Science Forum 1062, 361-365, 2022 | 5 | 2022 |
| Characterization of 4H-SiC lattice damage after novel high energy ion implantation Z Chen, Y Liu, H Peng, T Ailihumaer, Q Cheng, S Hu, B Raghothamachar, ... ECS Transactions 104 (7), 75, 2021 | 5 | 2021 |
| Microstructure analysis of GaN epitaxial layers during ion implantation using synchrotron X-ray topography Y Liu, H Peng, Z Chen, T Ailihumaer, Q Cheng, S Hu, B Raghothamachar, ... ECS Transactions 104 (7), 113, 2021 | 5 | 2021 |
| Analysis of dislocation contrast in synchrotron grazing-incidence x-ray topographs and ray-tracing simulation in off-axis 4h-sic crystals T Ailihumaer, H Peng, Y Liu, Q Cheng, Z Chen, S Hu, B Raghothamachar, ... ECS Transactions 104 (7), 157, 2021 | 4 | 2021 |
| Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations Q Cheng, T Ailihumaer, Y Liu, H Peng, Z Chen, B Raghothamachar, ... Journal of Electronic Materials 50 (7), 4104-4117, 2021 | 4 | 2021 |
| Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations Q Cheng, Z Chen, S Hu, Y Liu, B Raghothamachar, M Dudley Materials Science in Semiconductor Processing 174, 108207, 2024 | 3 | 2024 |
| Effective penetration depth investigation for Frank type dislocation (deflected TSDs/TMDs) on grazing incidence synchrotron X-ray topographs of 4H-SiC wafers QY Cheng, HY Peng, ZY Chen, S Hu, Y Liu, B Raghothamachar, ... Defect and Diffusion Forum 426, 57-64, 2023 | 3 | 2023 |
| Analysis of basal plane dislocation motion induced by P+ Ion implantation using synchrotron X-ray topography ZY Chen, Y Liu, HY Peng, QY Cheng, S Hu, B Raghothamachar, ... Defect and Diffusion Forum 426, 71-78, 2023 | 3 | 2023 |
| Characterization of prismatic slip in SiC crystals by chemical etching method S Hu, S Fang, Y Liu, QY Cheng, HY Peng, ZY Chen, YH Gao, C Gao, ... Materials Science Forum 1089, 45-50, 2023 | 3 | 2023 |
| Ray-tracing simulation Analysis of effective penetration Depths on grazing incidence synchrotron X-ray topographic Images of basal plane Dislocations in 4H-SiC wafers QY Cheng, HY Peng, S Hu, ZY Chen, Y Liu, B Raghothamachar, ... Materials Science Forum 1062, 366-370, 2022 | 3 | 2022 |
| Investigation of Static Performances of 1.2 kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’Ion Implantations SA Mancini, SY Jang, Z Chen, D Kim, A Bialy, B Raghotamacher, ... IEEE Journal of the Electron Devices Society, 2024 | 2 | 2024 |
| Synchrotron X-ray topographic characterization of dislocations in 6H-SiC axial samples H Peng, Y Liu, Z Chen, Q Cheng, S Hu, B Raghothamachar, M Dudley, ... Journal of Crystal Growth 579, 126459, 2022 | 2 | 2022 |
| Prismatic Slip in AlN Crystals Grown By PVT S Hu, H Fang, Y Liu, H Peng, T Ailihumaer, Q Cheng, Z Chen, R Dalmau, ... ECS Transactions 104 (7), 57, 2021 | 2 | 2021 |
Michael DudleyStony Brook Univ., Univ. of Warwick, Strathclyde Univ., Université Pierre et Marie Curie (Paris 6)在 stonybrook.edu 的电子邮件经过验证
