Review and test of methods for determination of the Schottky diode parameters OY Olikh Journal of Applied Physics 118 (2), 2015 | 39 | 2015 |
Ultrasound-stimulated increase in the electron diffusion length in p-Si crystals OY Olikh, IV Ostrovskii Physics of the Solid State 44, 1249-1253, 2002 | 22 | 2002 |
Ultrasonically Recovered Performance of-Irradiated Metal-Silicon Structures AM Gorb, OA Korotchenkov, OY Olikh, AO Podolian IEEE Transactions on Nuclear Science 57 (3), 1632-1639, 2010 | 16 | 2010 |
On the mechanism of ultrasonic loading effect in silicon-based Schottky diodes O Olikh, K Voytenko Ultrasonics 66, 1-3, 2016 | 13 | 2016 |
Увеличение длины диффузии электронов в кристаллах p-кремния под действием ультразвука ОЯ Олих, ИВ Островский Физика твердого тела 44 (7), 1198, 2002 | 13 | 2002 |
Reversible influence of ultrasound on γ-irradiated Mo/n-Si Schottky barrier structure OY Olikh Ultrasonics 56, 545-550, 2015 | 12 | 2015 |
Ultrasound influence on I–V–T characteristics of silicon Schottky barrier structure OY Olikh, KV Voytenko, RM Burbelo Journal of Applied Physics 117 (4), 2015 | 12 | 2015 |
Features of dynamic acoustically induced modification of photovoltaic parameters of silicon solar cells OY Olikh Semiconductors 45, 798-804, 2011 | 11 | 2011 |
Increase of electron diffusion length in p-Si crystals under ultrasound action OY Olikh, IV Ostrovsky Fizika tverdogo tela 44 (7), 1198-1202, 2002 | 10 | 2002 |
Acoustically driven optical phenomena in bulk and low-dimensional semiconductors IV Ostrovskii, OA Korotchenkov, OY Olikh, AA Podolyan, RG Chupryna, ... Journal of Optics A: Pure and Applied Optics 3 (4), S82, 2001 | 10 | 2001 |
Acousto–defect interaction in irradiated and non-irradiated silicon n+–p structures OY Olikh, AM Gorb, RG Chupryna, OV Pristay-Fenenkov Journal of Applied Physics 123 (16), 2018 | 9 | 2018 |
Active ultrasound effects and their future usage in sensor electronics JM Olikh, OY Olikh Сенсорна електроніка і мікросистемні технології 1 (1), 19-29, 2004 | 9 | 2004 |
Non-Monotonic-Ray Influence on Mo/n-Si Schottky Barrier Structure Properties OY Olikh IEEE Transactions on Nuclear Science 60 (1), 394-401, 2013 | 8 | 2013 |
Ultrasonic assisted nanomanipulations with atomic force microscope PM Lytvyn, OY Olikh, OS Lytvyn, OM Dyachyns' ka, IV Prokopenko Semiconductor physics, quantum electronics & optoelectronics, 36-42, 2010 | 8 | 2010 |
Acoustic wave corrected current-voltage characteristics of GaAs-based structures with Schottky contacts OY Olikh, TN Pinchuk Technical physics letters 32, 517-519, 2006 | 8 | 2006 |
Features of FeB pair light-induced dissociation and repair in silicon n+-p-p+ structures under ultrasound loading O Olikh, V Kostylyov, V Vlasiuk, R Korkishko, Y Olikh, R Chupryna Journal of Applied Physics 130 (23), 2021 | 6 | 2021 |
особенности динамических акустоиндуцированных изменений фотоэлектрических параметров кремниевых солнечных элементов ОЯ Олих Физика и техника полупроводников 45 (6), 816-822, 2011 | 6 | 2011 |
The variation in activity of recombination centers in silicon p-n structures under the conditions of acoustic loading OY Olikh Semiconductors 43, 745-750, 2009 | 6 | 2009 |
Estimation for iron contamination in Si solar cell by ideality factor: Deep neural network approach O Olikh, O Lozitsky, O Zavhorodnii Progress in Photovoltaics: Research and Applications 30 (6), 648-660, 2022 | 5 | 2022 |
Clusters of Point Defects Near Dislocations as a Tool to Control CdZnTe Electrical Parameters by Ultrasound YM Olikh, MD Tymochko, OY Olikh, VA Shenderovsky Journal of Electronic Materials 47, 4370-4378, 2018 | 5 | 2018 |