| VETAM-M: A general model for voltage-controlled memcapacitive-coupled memristors K Ren, K Zhang, X Qin, F Yang, B Sun, Y Zhao, Y Zhang IEEE Transactions on Circuits and Systems II: Express Briefs 69 (3), 1717-1721, 2021 | 15 | 2021 |
| In-materio reservoir computing based on nanowire networks: fundamental, progress, and perspective R Fang, W Zhang, K Ren, P Zhang, X Xu, Z Wang, D Shang Materials Futures 2 (2), 022701, 2023 | 11 | 2023 |
| Tunable Negative Differential Resistance and Resistive Switching Properties of Amorphous WOₓ Devices K Zhang, K Ren, X Qin, S Zhu, F Yang, Y Zhao, Y Zhang IEEE Transactions on Electron Devices 68 (8), 3807-3812, 2021 | 11 | 2021 |
| Research progress of neuromorphic computation based on memcapacitors R Kuan, Z Ke-Jia, Q Xi-Zi, R Huan-Xin, Z Shou-Hui, Y Feng, S Bai, Z Yong ACTA PHYSICA SINICA 70 (7), 2021 | 6 | 2021 |
| Next-generation reservoir computing based on memristor array br R Kuan, Z Wo-Yu, W Fei, G Ze-Yu, S Da-Shan Acta Physica Sinica 71 (14), 2022 | 4 | 2022 |
| Oxide‐Based Electrolyte‐Gated Transistors with Stable and Tunable Relaxation Responses for Deep Time‐Delayed Reservoir Computing R Fang, S Wang, W Zhang, K Ren, W Sun, F Wang, J Lai, P Zhang, X Xu, ... Advanced Electronic Materials 10 (4), 2300652, 2024 | 3 | 2024 |
| Improved dynamic characteristics of oxide electrolyte-gated transistor for time-delayed reservoir computing R Fang, X Li, K Ren, W Zhang, H Xu, L Wang, D Shang Applied Physics Letters 124 (5), 2024 | 1 | 2024 |
