| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1109 | 2018 |
| Reverse side engineered III-nitride devices R Chu, U Mishra, RK Lal US Patent 8,389,977, 2013 | 448 | 2013 |
| 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance R Chu, A Corrion, M Chen, R Li, D Wong, D Zehnder, B Hughes, ... IEEE Electron Device Letters 32 (5), 632-634, 2011 | 448 | 2011 |
| Semiconductor heterostructure diodes Y Wu, U Mishra, P Parikh, R Chu, I Ben-Yaacov, L Shen US Patent 7,898,004, 2011 | 222 | 2011 |
| An experimental demonstration of GaN CMOS technology R Chu, Y Cao, M Chen, R Li, D Zehnder IEEE Electron Device Letters 37 (3), 269-271, 2016 | 161 | 2016 |
| Semiconductor devices with field plates R Chu, R Coffie US Patent 8,390,000, 2013 | 154 | 2013 |
| AlGaN-GaN double-channel HEMTs R Chu, Y Zhou, J Liu, D Wang, KJ Chen, KM Lau IEEE Transactions on electron devices 52 (4), 438-446, 2005 | 150 | 2005 |
| High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth Y Cao, R Chu, R Li, M Chen, R Chang, B Hughes Applied Physics Letters 108 (6), 2016 | 146 | 2016 |
| 600 V/ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor R Li, Y Cao, M Chen, R Chu IEEE Electron Device Letters 37 (11), 1466-1469, 2016 | 136 | 2016 |
| Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition S Keller, CS Suh, Z Chen, R Chu, S Rajan, NA Fichtenbaum, M Furukawa, ... Journal of Applied Physics 103 (3), 2008 | 120 | 2008 |
| III-nitride devices and circuits Y Wu, R Chu US Patent 7,884,394, 2011 | 109 | 2011 |
| High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels G Koblmüller, RM Chu, A Raman, UK Mishra, JS Speck Journal of Applied Physics 107 (4), 2010 | 84 | 2010 |
| Impact of Plasma Treatment on GaN R Chu, CS Suh, MH Wong, N Fichtenbaum, D Brown, L McCarthy, ... IEEE electron device letters 28 (9), 781-783, 2007 | 79 | 2007 |
| V-gate GaN HEMTs with engineered buffer for normally off operation R Chu, Z Chen, SP DenBaars, UK Mishra IEEE Electron Device Letters 29 (11), 1184-1186, 2008 | 77 | 2008 |
| Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz Y Pei, R Chu, NA Fichtenbaum, Z Chen, D Brown, L Shen, S Keller, ... Japanese Journal of Applied Physics 46 (12L), L1087, 2007 | 77 | 2007 |
| Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts R Chu, L Shen, N Fichtenbaum, D Brown, S Keller, UK Mishra IEEE electron device letters 29 (4), 297-299, 2008 | 74 | 2008 |
| Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs J Liu, Y Zhou, R Chu, Y Cai, KJ Chen, KM Lau IEEE electron device letters 26 (3), 145-147, 2005 | 70 | 2005 |
| GaN power electronics for automotive application KS Boutros, R Chu, B Hughes 2012 IEEE Energytech, 1-4, 2012 | 69 | 2012 |
| Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures S Keller, CS Suh, NA Fichtenbaum, M Furukawa, R Chu, Z Chen, ... Journal of Applied Physics 104 (9), 2008 | 69 | 2008 |
| Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ... Applied Physics Letters 99 (20), 2011 | 63 | 2011 |
