| Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation MS Wong, C Lee, DJ Myers, D Hwang, JA Kearns, T Li, JS Speck, ... Applied Physics Express 12 (9), 097004, 2019 | 192 | 2019 |
| Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments MS Wong, JA Kearns, C Lee, JM Smith, C Lynsky, G Lheureux, H Choi, ... Optics express 28 (4), 5787-5793, 2020 | 142 | 2020 |
| GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition SG Lee, CA Forman, C Lee, J Kearns, EC Young, JT Leonard, DA Cohen, ... Applied Physics Express 11 (6), 062703, 2018 | 74 | 2018 |
| Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact CA Forman, SG Lee, EC Young, JA Kearns, DA Cohen, JT Leonard, ... Applied Physics Letters 112 (11), 2018 | 70 | 2018 |
| Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template H Li, MS Wong, M Khoury, B Bonef, H Zhang, YC Chow, P Li, J Kearns, ... Optics Express 27 (17), 24154-24160, 2019 | 50 | 2019 |
| Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts SG Lee, CA Forman, J Kearns, JT Leonard, DA Cohen, S Nakamura, ... Optics Express 27 (22), 31621-31628, 2019 | 46 | 2019 |
| Demonstration of blue semipolar (202 1) GaN-based vertical-cavity surface-emitting lasers JA Kearns, J Back, DA Cohen, SP DenBaars, S Nakamura Optics express 27 (17), 23707-23713, 2019 | 29 | 2019 |
| Inhomogeneous Current Injection and Filamentary Lasing of Semipolar Blue GaN‐Based Vertical‐Cavity Surface‐Emitting Lasers with Buried Tunnel Junctions JA Kearns, J Back, NC Palmquist, DA Cohen, SP DenBaars, S Nakamura physica status solidi (a) 217 (7), 1900718, 2020 | 21 | 2020 |
| Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers CA Forman, SG Lee, EC Young, JA Kearns, DA Cohen, JT Leonard, ... Gallium Nitride Materials and Devices XIII 10532, 94-104, 2018 | 17 | 2018 |
| Highly efficient operation and uniform characteristics of curved mirror vertical-cavity surface-emitting lasers M Ito, T Hamaguchi, T Makino, K Hayashi, JA Kearns, M Ohara, ... Applied Physics Express 16 (1), 012006, 2023 | 12 | 2023 |
| Narrow emission of blue GaN-based vertical-cavity surface-emitting lasers with a curved mirror K Hayashi, T Hamaguchi, JA Kearns, N Kobayashi, M Ohara, T Makino, ... IEEE Photonics Journal 14 (4), 1-5, 2022 | 12 | 2022 |
| Growth kinetics of basic ammonothermal gallium nitride crystals S Griffiths, S Pimputkar, J Kearns, TF Malkowski, MF Doherty, JS Speck, ... Journal of Crystal Growth 501, 74-80, 2018 | 12 | 2018 |
| Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length J Back, MS Wong, J Kearns, SP DenBaars, C Weisbuch, S Nakamura Optics Express 28 (20), 29991-30003, 2020 | 11 | 2020 |
| Longitudinal mode control in long cavity VCSELs with a curved mirror JA Kearns, T Hamaguchi, K Hayashi, M Ohara, T Makino, M Ito, ... Applied Physics Express 15 (7), 072009, 2022 | 7 | 2022 |
| Long-cavity M-plane GaN-based vertical-cavity surface-emitting lasers with a topside monolithic curved mirror NC Palmquist, R Anderson, JA Kearns, J Back, E Trageser, S Gee, ... Photonics 10 (6), 646, 2023 | 5 | 2023 |
| III-nitride surface-emitting laser and method of fabrication C Forman, S Lee, EC Young, J Kearns, SP DenBaars, JS Speck, ... US Patent 11,532,922, 2022 | 4 | 2022 |
| Spontaneously implemented spatial coherence in vertical-cavity surface-emitting laser dot array T Hamaguchi, T Makino, K Hayashi, JA Kearns, M Ohara, M Ito, ... Scientific Reports 12 (1), 21629, 2022 | 3 | 2022 |
| Highly-efficient operation and mode control in GaN-based VCSELs with a curved mirror T Hamaguchi, M Ito, JA Kearns, T Makino, K Hayashi, M Ohara, ... Gallium Nitride Materials and Devices XVIII 12421, 119-126, 2023 | 2 | 2023 |
| Continuous-wave operation of long-cavity m-plane GaN-based vertical-cavity surface-emitting lasers with a topside curved mirror and nanoporous GaN DBR NC Palmquist, R Anderson, JA Kearns, J Back, E Trageser, S Gee, ... Gallium Nitride Materials and Devices XVIII 12421, 127-135, 2023 | 2 | 2023 |
| Mode control in long cavity VCSELs with a curved mirror JA Kearns, T Hamaguchi, K Hayashi, M Ohara, T Makino, M Ito, ... Gallium Nitride Materials and Devices XVII 12001, 52-57, 2022 | 2 | 2022 |
