| Plasma-based nanoarchitectonics for vertically aligned dual-metal carbon nanotube field-effect transistor (VA-DMCNFET) device: effect of plasma parameters on transistor properties M Kansal, SC Sharma Applied Physics A 128, 1-11, 2022 | 18 | 2022 |
| Performance Evaluation & Linearity Distortion Analysis for Plasma- Assisted Dual-Material Carbon Nanotube Field Effect Transistor with a SiO2-HfO2 Stacked … M Kansal, SC Sharma Silicon 14 (18), 12381-12391, 2022 | 9 | 2022 |
| Exploration of novel hafnium oxide (HfO2) based plasma-assisted gate all around carbon nanotube FET (GAA-CNTFET) for high sensing applications M Kansal, SC Sharma ECS Journal of Solid State Science and Technology 11 (10), 101002, 2022 | 5 | 2022 |
| Impact of PECVD characteristics on metrics of a plasma-assisted vertically aligned carbon nanotube FET (VA-CNTFET) device M Kansal, SC Sharma 2022 IEEE International Conference on Nanoelectronics, Nanophotonics …, 2022 | 3 | 2022 |
| Numerical simulation of performance metrics of dual metal gate carbon nanotube field effect transistor (DM-CNTFET) for numerous sensing purposes M Kansal, SC Sharma, MK Kansal Materials Today: Proceedings, 2023 | 2 | 2023 |
| Terahertz Metamaterial Absorber Based on Graphene with Properties Optimised by Investigation of Plasma Parameters for Improved Device Performance R Bhatia, U Ramachandra, V Anirudh, M Kansal, SC Sharma ECS Journal of Solid State Science and Technology 12 (7), 071003, 2023 | | 2023 |
| Simulation-Based Analysis of Plasma-Assisted Carbon Nanotube Field-Effect Transistor (CNTFET) for Improved Device Metrics and Applications M Kansal, SC Sharma, MK Kansal International Conference on Nanotechnology: Opportunities and Challenges …, 2022 | | 2022 |
| Analysis of Cylindrical Double Gate Junctionless Carbon Nanotube Field Effect Transistor (JL-CNTFET) for Sensing Applications SC Sharma, M Kansal | | |
| Simulation Analysis for Detection of various Biomolecules in a Double Gate Plasma-Assisted Carbon Nanotube Field Effect Transistor (DG-CNFET) B Sharma, N Singh, J Upadhyaya, M Kansal | | |
