| Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs W Li, B Romanczyk, M Guidry, E Akso, N Hatui, C Wurm, W Liu, ... IEEE Transactions on Electron Devices 70 (4), 2075-2080, 2023 | 24 | 2023 |
| First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz E Akso, H Collins, C Clymore, W Li, M Guidry, B Romanczyk, C Wurm, ... IEEE Microwave and Wireless Technology Letters 33 (6), 683-686, 2023 | 16 | 2023 |
| HfO2 as gate insulator on N-polar GaN–AlGaN heterostructures CJ Clymore, S Mohanty, ZA Jian, A Krishna, S Keller, E Ahmadi Semiconductor Science and Technology 36 (3), 035017, 2021 | 10 | 2021 |
| Record 94 GHz performance from N-polar GaN-on-sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE W Li, B Romanczyk, E Akso, M Guidry, N Hatui, C Wurm, W Liu, ... 2022 International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2022 | 9 | 2022 |
| Schottky barrier gate N-polar GaN-on-Sapphire deep recess HEMT with record 10.5 dB linear gain and 50.2% PAE at 94 GHz E Akso, H Collins, K Khan, B Wang, W Li, C Clymore, E Kayede, W Liu, ... IEEE Microwave and Wireless Technology Letters, 2024 | 6 | 2024 |
| Record 1 W output power from a single N-polar GaN MISHEMT at 94 GHz E Akso, C Clymore, W Liu, H Collins, B Romanczyk, W Li, N Hatui, ... 2023 Device Research Conference (DRC), 1-2, 2023 | 6 | 2023 |
| Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga2O3 (001) substrates ZA Jian, CJ Clymore, K Sun, U Mishra, E Ahmadi Applied Physics Letters 120 (14), 2022 | 5 | 2022 |
| First comparison of active and passive load pull at W-band CJ Clymore, E Akso, M Guidry, H Collins, W Liu, C Wurm, N Hatui, ... 2023 101st ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2023 | 4 | 2023 |
| First demonstration of an N-polar InAlGaN/GaN HEMT R Hamwey, N Hatui, E Akso, F Wu, C Clymore, S Keller, JS Speck, ... IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz E Akso, W Li, C Clymore, E O’Malley, M Guidry, J Kim, B Romanczyk, ... IEEE Microwave and Wireless Technology Letters, 2024 | 1 | 2024 |
| N-polar GaN MISHEMT with bias-insensitive linearity at 30 GHz H Collins, E Akso, N Hatui, CJ Clymore, C Wurm, R Hamwey, M Guidry, ... IEEE Microwave and Wireless Technology Letters, 2024 | 1 | 2024 |
| Electrical and Structural Analysis of β‐Ga2O3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer Z Jian, K Sun, S Kosanovic, CJ Clymore, U Mishra, E Ahmadi Advanced Electronic Materials 9 (8), 2300174, 2023 | 1 | 2023 |
| N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning H Collins, E Akso, CJ Clymore, K Khan, R Hamwey, N Hatui, M Guidry, ... Electronics Letters 60 (13), e13272, 2024 | | 2024 |
| N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P at 94 GHz H Collins, E Akso, CJ Clymore, K Khan, R Hamwey, N Hatui, M Guidry, ... IEEE Microwave and Wireless Technology Letters, 2024 | | 2024 |
