| State of the art and the future of wide band-gap devices N Kaminski 2009 13th European Conference on Power Electronics and Applications, 1-9, 2009 | 219 | 2009 |
| SiC and GaN devices–wide bandgap is not all the same N Kaminski, O Hilt IET Circuits, Devices & Systems 8 (3), 227-236, 2014 | 209 | 2014 |
| SiC and GaN devices-competition or coexistence? N Kaminski, O Hilt 2012 7th International Conference on Integrated Power Electronics Systems …, 2012 | 89 | 2012 |
| Temperature humidity bias (THB) testing on IGBT modules at high bias levels C Zorn, N Kaminski CIPS 2014; 8th International Conference on Integrated Power Electronics …, 2014 | 81 | 2014 |
| Acceleration of temperature humidity bias (THB) testing on IGBT modules by high bias levels C Zorn, N Kaminski 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 80 | 2015 |
| Limitation of the short-circuit ruggedness of high-voltage IGBTs A Kopta, M Rahimo, U Schlapbach, N Kaminski, D Silber 2009 21st International Symposium on Power Semiconductor Devices & IC's, 33-36, 2009 | 69 | 2009 |
| The radial layout design concept for the bi-mode insulated gate transistor L Storasta, M Rahimo, M Bellini, A Kopta, UR Vemulapati, N Kaminski 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011 | 63 | 2011 |
| Failure rates of HiPak modules due to cosmic rays N Kaminski, A Kopta ABB Switzerland Ltd., Zurich, Switzerland, ABB Appl. note 5SYA, 2042-04, 2011 | 59 | 2011 |
| Dynamics of incomplete ionized dopants and their impact on 4H/6H-SiC devices M Lades, W Kaindl, N Kaminski, E Niemann, G Wachutka IEEE Transactions on Electron Devices 46 (3), 598-604, 1999 | 54 | 1999 |
| SiC merged pn/Schottky rectifiers for high voltage applications R Held, N Kaminski, E Niemann Materials Science Forum 264, 1998 | 52 | 1998 |
| Temperature–humidity–bias testing on insulated‐gate bipolartransistor modules–failure modes and acceleration due to high voltage C Zorn, N Kaminski IET Power Electronics 8 (12), 2329-2335, 2015 | 50 | 2015 |
| Extending the boundary limits of high voltage IGBTs and diodes to above 8 kV M Rahimo, A Kopta, S Eicher, N Kaminski, F Bauer, U Schlapbach, ... Proceedings of the 14th International Symposium on Power Semiconductor …, 2002 | 48 | 2002 |
| Semiconductor component and method for producing the same N Kaminski, R Held US Patent 6,949,401, 2005 | 46 | 2005 |
| Capacitance roll‐off and frequency‐dispersion capacitance–conductance phenomena in field plate and guard ring edge‐terminated Ni/SiO2/4H‐nSiC Schottky … V Kumar, N Kaminski, AS Maan, J Akhtar physica status solidi (a) 213 (1), 193-202, 2016 | 45 | 2016 |
| Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC W Kaindl, M Lades, N Kaminski, E Niemann, G Wachutka Journal of electronic materials 28, 154-160, 1999 | 42 | 1999 |
| Reverse conducting–IGBTs initial snapback phenomenon and its analytical modelling U Vemulapati, N Kaminski, D Silber, L Storasta, M Rahimo IET Circuits, Devices & Systems 8 (3), 168-175, 2014 | 31 | 2014 |
| Power Cycling Test on 3.3kV SiC MOSFETs and the Effects of Bipolar Degradation on the Temperature Estimation by VSD-Method F Hoffmann, V Soler, A Mihaila, N Kaminski 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 30 | 2019 |
| Evaluation of the VSD‐method for temperature estimation during power cycling of SiC‐MOSFETs F Hoffmann, N Kaminski IET Power Electronics 12 (15), 3903-3909, 2019 | 29 | 2019 |
| Electric field distribution using floating metal guard rings edge-termination for Schottky diodes K Driche, S Rugen, N Kaminski, H Umezawa, H Okumura, E Gheeraert Diamond and Related Materials 82, 160-164, 2018 | 28 | 2018 |
| Semiconductor component and method for producing the same N Kaminski, R Held US Patent 6,501,145, 2002 | 28 | 2002 |
