Thermal energy harvesting wireless sensor node in aluminum core PCB technology A Prijić, L Vračar, D Vučković, D Milić, Z Prijić IEEE Sensors Journal 15 (1), 337-345, 2014 | 71 | 2014 |
Dependance of static dielectric constant of silicon on resistivity at room temperature S Ristić, A Prijić, Z Prijić SJEE 1 (2), 237-247, 2004 | 49 | 2004 |
Characterization of commercial thermoelectric modules for application in energy harvesting wireless sensor nodes D Milić, A Prijić, L Vračar, Z Prijić Applied Thermal Engineering 121, 74-82, 2017 | 40 | 2017 |
Photovoltaic energy harvesting wireless sensor node for telemetry applications optimized for low illumination levels L Vračar, A Prijić, D Nešić, S Dević, Z Prijić Electronics 5 (2), 26, 2016 | 36 | 2016 |
On the recoverable and permanent components of NBTI in p-channel power VDMOSFETs D Danković, I Manić, V Davidović, A Prijić, M Marjanović, A Ilić, Z Prijić, ... IEEE Transactions on Device and Materials Reliability 16 (4), 522-531, 2016 | 25 | 2016 |
NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions I Manić, D Danković, A Prijić, V Davidović, S Djorić-Veljković, S Golubović, ... Microelectronics Reliability 51 (9-11), 1540-1543, 2011 | 25 | 2011 |
Negative bias temperature instability in p-channel power VDMOSFETs: Recoverable versus permanent degradation D Danković, I Manić, A Prijić, S Djorić-Veljković, V Davidović, ... Semiconductor Science and Technology 30 (10), 105009, 2015 | 24 | 2015 |
NBTI and irradiation related degradation mechanisms in power VDMOS transistors N Stojadinović, S Djorić-Veljković, V Davidović, S Golubović, S Stanković, ... Microelectronics Reliability 88, 135-141, 2018 | 19 | 2018 |
A review of pulsed NBTI in P-channel power VDMOSFETs D Danković, I Manić, A Prijić, V Davidović, Z Prijić, S Golubović, ... Microelectronics Reliability 82, 28-36, 2018 | 19 | 2018 |
An electromechanical approach to a printed circuit board design course D Danković, L Vračar, A Prijić, Z Prijić IEEE transactions on education 56 (4), 470-477, 2013 | 19 | 2013 |
NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs V Davidović, D Danković, S Golubović, S Djoric-Veljkovic, I Manić, Z Prijić, ... Facta Universitatis, Series: Electronics and Energetics 31 (3), 367-388, 2018 | 17 | 2018 |
Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET D Danković, N Stojadinović, Z Prijić, I Manić, V Davidović, A Prijić, ... Chinese Physics B 24 (10), 106601, 2015 | 17 | 2015 |
Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress N Stojadinović, D Danković, I Manić, A Prijić, V Davidović, ... Microelectronics Reliability 50 (9-11), 1278-1282, 2010 | 17 | 2010 |
A method for negative bias temperature instability (NBTI) measurements on power VDMOS transistors A Prijić, D Danković, L Vračar, I Manić, Z Prijić, N Stojadinović Measurement Science and Technology 23 (8), 085003, 2012 | 15 | 2012 |
Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors V Davidović, D Danković, A Ilić, I Manić, S Golubović, S Djorić-Veljković, ... Japanese Journal of Applied Physics 57 (4), 044101, 2018 | 13 | 2018 |
Capacitive pressure sensing based key in PCB technology for industrial applications L Vracar, A Prijic, D Vuckovic, Z Prijic IEEE Sensors Journal 12 (5), 1496-1503, 2011 | 13 | 2011 |
A transient modeling of the thermoelectric generators for application in wireless sensor network nodes M Marjanović, A Prijić, B Randjelović, Z Prijić Electronics 9 (6), 1015, 2020 | 12 | 2020 |
The importance of students’ practical work in high schools for higher education in electronic engineering D Danković, M Marjanović, N Mitrović, E Živanović, M Danković, A Prijić, ... IEEE Transactions on Education 66 (2), 146-155, 2022 | 11 | 2022 |
The effect of flat panel reflectors on photovoltaic energy harvesting in wireless sensor nodes under low illumination levels A Prijić, L Vračar, Z Pavlović, L Kostić, Z Prijić IEEE Sensors Journal 15 (12), 7105-7111, 2015 | 11 | 2015 |
Measurement of NBTI degradation in p-channel power VDMOSFETs I Manić, D Danković, A Prijić, Z Prijić, N Stojadinović Informacije MIDEM 44 (4), 280-287, 2014 | 11 | 2014 |