Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges F Djeffal, Z Ghoggali, Z Dibi, N Lakhdar Microelectronics Reliability 49 (4), 377-381, 2009 | 105 | 2009 |
Design and simulation of a nanoelectronic DG MOSFET current source using artificial neural networks F Djeffal, Z Dibi, ML Hafiane, D Arar Materials Science and Engineering: C 27 (5-8), 1111-1116, 2007 | 52 | 2007 |
A neural approach to study the scaling capability of the undoped double-gate and cylindrical gate all around MOSFETs F Djeffal, MA Abdi, Z Dibi, M Chahdi, A Benhaya Materials Science and Engineering: B 147 (2-3), 239-244, 2008 | 49 | 2008 |
A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs MA Abdi, F Djeffal, Z Dibi, D Arar Journal of computational electronics 10, 179-185, 2011 | 40 | 2011 |
A novel neural network-based technique for smart gas sensors operating in a dynamic environment H Baha, Z Dibi Sensors 9 (11), 8944-8960, 2009 | 40 | 2009 |
Characterisation and modelling of the mismatch of TCRs and their effects on the drift of the offset voltage of piezoresistive pressure sensors A Boukabache, P Pons, G Blasquez, Z Dibi Sensors and Actuators A: Physical 84 (3), 292-296, 2000 | 38 | 2000 |
A comparative study on scaling capabilities of Si and SiGe nanoscale double gate tunneling FETs T Bentrcia, F Djeffal, H Ferhati, Z Dibi Silicon 12 (4), 945-953, 2020 | 26 | 2020 |
Internal model control and disturbance observers R Gorez, D Galardini, KY Zhu [1991] Proceedings of the 30th IEEE Conference on Decision and Control, 229-234, 1991 | 24 | 1991 |
An efficient small size electromagnetic energy harvesting sensor for low‐DC‐power applications F Meddour, Z Dibi IET Microwaves, Antennas & Propagation 11 (4), 483-489, 2017 | 19 | 2017 |
Modeling and simulation of organic field effect transistor (OFET) using artificial neural networks I Benacer, Z Dibi International Journal of Advanced Science and Technology 66, 79-88, 2014 | 19 | 2014 |
An optimized metal grid design to improve the solar cell performance under solar concentration using multiobjective computation F Djeffal, T Bendib, D Arar, Z Dibi Materials science and engineering: B 178 (9), 574-579, 2013 | 19 | 2013 |
Hyperchaotic fractional Grassi–Miller map and its hardware implementation A Ouannas, AA Khennaoui, TE Oussaeif, VT Pham, G Grassi, Z Dibi Integration 80, 13-19, 2021 | 18 | 2021 |
Extracting parameters of OFET before and after threshold voltage using genetic algorithms I Benacer, Z Dibi International Journal of Automation and Computing 13, 382-391, 2016 | 17 | 2016 |
Depth resolution enhancement technique for CMOS time-of-flight 3-D image sensors ML Hafiane, W Wagner, Z Dibi, O Manck IEEE Sensors Journal 12 (6), 2320-2327, 2012 | 17 | 2012 |
Generating multidirectional variable hidden attractors via newly commensurate and incommensurate non-equilibrium fractional-order chaotic systems N Debbouche, S Momani, A Ouannas, MT Shatnawi, G Grassi, Z Dibi, ... Entropy 23 (3), 261, 2021 | 15 | 2021 |
On dynamics of a fractional-order discrete system with only one nonlinear term and without fixed points AA Khennaoui, A Ouannas, S Momani, IM Batiha, Z Dibi, G Grassi Electronics 9 (12), 2179, 2020 | 12 | 2020 |
An omnidirectional platform design: application to posture analysis N Hedjazi, A Benali, M Bouzit, Z Dibi XIV Mediterranean Conference on Medical and Biological Engineering and …, 2016 | 12 | 2016 |
On the capability of artificial neural networks to compensate nonlinearities in wavelength sensing ML Hafiane, Z Dibi, O Manck Sensors 9 (4), 2884-2894, 2009 | 12 | 2009 |
Effect of the silicon membrane flatness defect on the piezoresistive pressure sensor response Z Dibi, A Boukabache, P Pons ICECS 2000. 7th IEEE International Conference on Electronics, Circuits and …, 2000 | 12 | 2000 |
A Two‐Dimensional Numerical Analysis of Subthreshold Performances for Double‐Gate GaN‐MESFETs N Lakhdar, F Djeffal, Z Dibi AIP Conference Proceedings 1292 (1), 173-176, 2010 | 11 | 2010 |