| Remarkable efficiency improvement in AlGaN-based ultraviolet light-emitting diodes using graded last quantum barrier NU Islam, M Usman, S Khan, T Jamil, S Rasheed, S Ali, S Saeed Optik 248, 168212, 2021 | 11 | 2021 |
| High radiative recombination rate of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN/AlInN/AlInGaN tunnel electron blocking layer T Jamil, M Usman, H Jamal, S Khan, S Rasheed, S Ali Journal of Electronic Materials 50 (10), 5612-5617, 2021 | 9 | 2021 |
| Perspective on light-fidelity and visible light communication S Khan, M Usman, S Ali Journal of Laser Applications 34 (1), 2022 | 8 | 2022 |
| Performance enhancement of ultraviolet-C AlGaN laser diode S Ali, M Usman The European Physical Journal Plus 137 (7), 771, 2022 | 6 | 2022 |
| High performance near-infrared III-Arsenide laser diodes with p-AlGaAs barriers S Saeed, M Usman, S Ali, H Ali, L Mustafa Optical Materials 139, 113809, 2023 | 4 | 2023 |
| Improving the gain and efficiency of ultraviolet-C laser diodes S Ali, M Usman Journal of Materials Science 57 (34), 16397-16403, 2022 | 3 | 2022 |
| Engineering last quantum barrier/electron blocking layer interface to improve green light-emitting diodes M Munsif, M Usman, AR Anwar, S Khan, S Rasheed, S Ali Optical and Quantum Electronics 53, 1-10, 2021 | 2 | 2021 |
| Grading waveguide to improve the performance of ultraviolet laser diodes S Ali, M Usman, L Mustafa Journal of Luminescence 263, 120135, 2023 | 1 | 2023 |
| Designing p-region of AlGaN ultraviolet light-emitting diodes for the improved performance S Rasheed, M Usman, S Ali, L Mustafa, H Ali Physica B: Condensed Matter 659, 414865, 2023 | 1 | 2023 |
| Compositionally graded quaternary electron blocking layer for efficient deep ultraviolet AlGaN-based light-emitting diodes M Usman, S Malik, M Hussain, S Ali, S Saeed, AR Anwar, M Munsif Optical Review 29 (6), 498-503, 2022 | 1 | 2022 |
| Improvement in optoelectronic properties of AlGaAs/InGaAs laser in near-infrared region S Saeed, M Usman, S Ali Laser Science, JTu4B. 28, 2022 | 1 | 2022 |
| High radiative recombination in GaN-based yellow light-emitting diodes S Khan, M Usman, S Ali, S Rasheed, S Saeed International Journal of Modern Physics B 36 (22), 2250139, 2022 | 1 | 2022 |
| Tunneling assisted p-contact free GaN-InGaN green light-emitting diodes J Bashir, M Usman, S Ali, L Mustafa Journal of Information Display, 1-6, 2024 | | 2024 |
| High-Power and High-Efficiency 221 nm AlGaN Far Ultraviolet Laser Diodes SW Shakir, M Usman, U Habib, S Ali, L Mustafa Journal of Solid State Science and Technology 13 (7), 076001, 2024 | | 2024 |
| High-Power and High-Efficiency 221 nm AlGaN Deep Ultraviolet Laser Diodes SW Shakir, M Usman, U Habib, S Ali, L Mustafa ECS Journal of Solid State Science and Technology, 2024 | | 2024 |
| III-Arsenide separate confinement heterostructure infrared laser diodes with engineered the cladding layers S Saeed, M Usman, S Ali, L Mustafa, I Anjum, J Bashir Physica B: Condensed Matter 683, 415956, 2024 | | 2024 |
| Epitaxial analysis of GaInP/AlGaInP red light-emitting diodes with ternary AlGaP quantum barriers for quantum efficiency enhancement M Usman, U Habib, S Ali Physica Scripta 99 (6), 0659b1, 2024 | | 2024 |
| Effect of optimized quaternary waveguides on the performance of deep ultraviolet laser diodes S Ali, M Usman, L Mustafa, J Bashir, N Muhammad Journal of Luminescence 269, 120441, 2024 | | 2024 |
| Employment of thin p-AlAs to improve near-infrared laser diodes S Saeed, M Usman, M Jahangir, L Mustafa, W Hidayat, J Bashir, I Anjum, ... Materials Science and Engineering: B 302, 117251, 2024 | | 2024 |
| Thin Quaternary Layer and Staggered Electron Blocking Layers for Improved Ultraviolet Light-Emitting Diodes S Rasheed, M Usman, L Mustafa, S Ali ECS Journal of Solid State Science and Technology 12 (7), 076003, 2023 | | 2023 |
