A study of the vertical walls and the surface roughness GaAs after the operation in the combined plasma etching VS Klimin, MS Solodovnik, VA Smirnov, AV Eskov, RV Tominov, ... International Conference on Micro-and Nano-Electronics 2016 10224, 497-500, 2016 | 60 | 2016 |
The influence of the chemical and physical component of the plasma etching of the surface of gallium arsenide on the etching rate in the chloride plasma of the combined discharge VS Klimin, RV Tominov, AV Eskov, SY Krasnoborodko, OA Ageev Journal of Physics: Conference Series 917 (9), 092005, 2017 | 35 | 2017 |
Hybrid Analytical–Monte Carlo Model of In/GaAs (001) Droplet Epitaxy: Theory and Experiment SV Balakirev, MS Solodovnik, OA Ageev physica status solidi (b) 255 (4), 1700360, 2018 | 34 | 2018 |
Mechanism of nucleation and critical layer formation during In/GaAs droplet epitaxy SV Balakirev, MS Solodovnik, MM Eremenko, BG Konoplev, OA Ageev Nanotechnology 30 (50), 505601, 2019 | 29 | 2019 |
Research of influence of the underlayer material on the growth rate of carbon nanotube arrays for manufacturing non-volatile memory elements with high speed VS Klimin, MV Il’Ina, OI Il’In, NN Rudyk, OA Ageev Journal of Physics: Conference Series 917 (9), 092023, 2017 | 28 | 2017 |
Monte Carlo simulation of the kinetic effects on GaAs/GaAs (001) MBE growth OA Ageev, MS Solodovnik, SV Balakirev, IA Mikhaylin, MM Eremenko Journal of Crystal Growth 457, 46-51, 2017 | 28 | 2017 |
Effect of interaction in the Ga–As–O system on the morphology of a GaAs surface during molecular-beam epitaxy OA Ageev, SV Balakirev, MS Solodovnik, MM Eremenko Physics of the Solid State 58, 1045-1052, 2016 | 25 | 2016 |
Effect of GaAs native oxide upon the surface morphology during GaAs MBE growth OA Ageev, MS Solodovnik, SV Balakirev, IA Mikhaylin, MM Eremenko Journal of Physics: Conference Series 741 (1), 012012, 2016 | 23 | 2016 |
Kinetic Monte Carlo simulation of GaAs (001) MBE growth considering the V/III flux ratio effect OA Ageev, MS Solodovnik, SV Balakirev, MM Eremenko Journal of Vacuum Science & Technology B 34 (4), 2016 | 20 | 2016 |
Droplet epitaxy of GaAs nanostructures on the As-stabilized GaAs (001) surface MS Solodovnik, SV Balakirev, MM Eremenko, IA Mikhaylin, VI Avilov, ... Journal of Physics: Conference Series 917 (3), 032037, 2017 | 17 | 2017 |
Monte Carlo investigation of the influence of V/III flux ratio on GaAs/GaAs (001) submonolayer epitaxy OA Ageev, MS Solodovnik, SV Balakirev, IA Mikhaylin Technical Physics 61, 971-977, 2016 | 17 | 2016 |
Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films VI Avilov, OA Ageev, BG Konoplev, VA Smirnov, MS Solodovnik, ... Semiconductors 50, 601-606, 2016 | 16 | 2016 |
Droplet epitaxy of In/AlGaAs nanostructures on the As-stabilized surface SV Balakirev, MM Eremenko, IA Mikhaylin, VS Klimin, MS Solodovnik Journal of Physics: Conference Series 1124 (2), 022018, 2018 | 14 | 2018 |
Kinetic Monte Carlo simulation of the indium droplet epitaxy on the Ga-terminated GaAs (001) surface SV Balakirev, MS Solodovnik, OA Ageev Journal of Physics: Conference Series 917 (3), 032033, 2017 | 14 | 2017 |
Independent Control Over Size and Surface Density of Droplet Epitaxial Nanostructures Using Ultra-Low Arsenic Fluxes SV Balakirev, NE Chernenko, MM Eremenko, OA Ageev, MS Solodovnik Nanomaterials 11 (5), 1184, 2021 | 13 | 2021 |
Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces SV Balakirev, MS Solodovnik, MM Eremenko, NE Chernenko, OA Ageev Nanotechnology 31 (48), 485604, 2020 | 11 | 2020 |
Study of the geometrical parameters of In nanostructures during droplet epitaxy on the As-stabilized GaAs (001) surface SV Balakirev, MM Eremenko, IA Mikhaylin, MS Solodovnik Journal of Physics: Conference Series 1124 (2), 022025, 2018 | 9 | 2018 |
Analytical–Monte Carlo model of the growth of In nanostructures during droplet epitaxy on the triangle-patterned GaAs substrates SV Balakirev, MS Solodovnik, IA Mikhaylin, MM Eremenko, OA Ageev Journal of Physics: Conference Series 1124 (2), 022001, 2018 | 9 | 2018 |
Resistive switching of GaAs oxide nanostructures V Avilov, N Polupanov, R Tominov, M Solodovnik, B Konoplev, V Smirnov, ... Materials 13 (16), 3451, 2020 | 8 | 2020 |
Модель начальной стадии гомоэпитаксиального роста GaAs методом МЛЭ с учётом соотношения потоков ростовых компонент СВ Балакирев, ЮФ Блинов, МС Солодовник Известия Южного федерального университета. Технические науки, 93-105, 2014 | 7 | 2014 |