| Field-effect transistor on with sputtered gate insulator K Ueno, IH Inoue, H Akoh, M Kawasaki, Y Tokura, H Takagi Applied Physics Letters 83 (9), 1755-1757, 2003 | 754 | 2003 |
| Nonvolatile memory with multilevel switching: a basic model MJ Rozenberg, IH Inoue, MJ Sanchez Physical review letters 92 (17), 178302, 2004 | 688 | 2004 |
| Electrostatic modification of novel materials CH Ahn, A Bhattacharya, M Di Ventra, JN Eckstein, CD Frisbie, ... Reviews of Modern Physics 78 (4), 1185, 2006 | 605 | 2006 |
| Colossal electroresistance of a thin film at room temperature A Odagawa, H Sato, IH Inoue, H Akoh, M Kawasaki, Y Tokura, T Kanno, ... Physical Review B 70 (22), 224403, 2004 | 353 | 2004 |
| Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution IH Inoue, S Yasuda, H Akinaga, H Takagi Physical Review B 77 (3), 035105, 2008 | 310 | 2008 |
| Systematic Development of the Spectral Function in the Mott-Hubbard System IH Inoue, I Hase, Y Aiura, A Fujimori, Y Haruyama, T Maruyama, ... Physical review letters 74 (13), 2539, 1995 | 293 | 1995 |
| High intergranular critical currents in metallic MgB2 superconductor M Kambara, NH Babu, ES Sadki, JR Cooper, H Minami, DA Cardwell, ... Superconductor Science and Technology 14 (4), L5, 2001 | 243 | 2001 |
| High speed unipolar switching resistance RAM (RRAM) technology Y Hosoi, Y Tamai, T Ohnishi, K Ishihara, T Shibuya, Y Inoue, S Yamazaki, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 215 | 2006 |
| Bandwidth control in a perovskite-type -correlated metal I. Evolution of the electronic properties and effective mass IH Inoue, O Goto, H Makino, NE Hussey, M Ishikawa Physical Review B 58 (8), 4372, 1998 | 206 | 1998 |
| Resistance switching in the metal deficient-type oxides: NiO and CoO H Shima, F Takano, H Akinaga, Y Tamai, IH Inoue, H Takagi Applied Physics Letters 91 (1), 2007 | 188 | 2007 |
| Strong electron correlation effects in nonvolatile electronic memory devices MJ Rozenberg, IH Inoue, MJ Sanchez Applied Physics Letters 88 (3), 2006 | 158 | 2006 |
| Metal oxide memories based on thermochemical and valence change mechanisms JJ Yang, IH Inoue, T Mikolajick, CS Hwang MRS bulletin 37 (2), 131-137, 2012 | 148 | 2012 |
| Electronic structure of Ca1− xSrxVO3: A tale of two energy scales K Maiti, DD Sarma, MJ Rozenberg, IH Inoue, H Makino, O Goto, M Pedio, ... Europhysics Letters 55 (2), 246, 2001 | 142 | 2001 |
| Superconductivity in Single-Crystalline Sr1-xLaxTiO3 H Suzuki, H Bando, Y Ootuka, I H. Inoue, T Yamamoto, K Takahashi, ... Journal of the Physical Society of Japan 65 (6), 1529-1532, 1996 | 142 | 1996 |
| Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films S Asanuma, PH Xiang, H Yamada, H Sato, IH Inoue, H Akoh, A Sawa, ... Applied Physics Letters 97 (14), 2010 | 132 | 2010 |
| Bandwidth control in a perovskite-type -correlated metal II. Optical spectroscopy H Makino, IH Inoue, MJ Rozenberg, I Hase, Y Aiura, S Onari Physical Review B 58 (8), 4384, 1998 | 102 | 1998 |
| Copper valence fluctuation in the organic conductor (dimethyl-N,N’-dicyanoquinonediimineCu studied by x-ray photoemission spectroscopy IH Inoue, A Kakizaki, H Namatame, A Fujimori, A Kobayashi, R Kato, ... Physical Review B 45 (11), 5828, 1992 | 100 | 1992 |
| Understanding the bulk electronic structure of K Maiti, U Manju, S Ray, P Mahadevan, IH Inoue, C Carbone, DD Sarma Physical Review B 73 (5), 052508, 2006 | 98 | 2006 |
| Control of resistance switching voltages in rectifying Pt∕ TiOx∕ Pt trilayer H Shima, F Takano, H Muramatsu, H Akinaga, IH Inoue, H Takagi Applied Physics Letters 92 (4), 2008 | 92 | 2008 |
| Bulk- and Surface-Sensitive High-Resolution Photoemission Study of Two Mott-Hubbard Systems: and R Eguchi, T Kiss, S Tsuda, T Shimojima, T Mizokami, T Yokoya, ... Physical review letters 96 (7), 076402, 2006 | 90 | 2006 |
