| Modeling of short-channel effects in DG MOSFETs: Green’s function method versus scale length model N Pandey, HH Lin, A Nandi, Y Taur IEEE Transactions on Electron Devices 65 (8), 3112-3119, 2018 | 34 | 2018 |
| Analytical modeling of DG-MOSFET in subthreshold regime by green’s function approach A Nandi, N Pandey, S Dasgupta IEEE Transactions on Electron Devices 64 (8), 3056-3062, 2017 | 28 | 2017 |
| Analytical modeling of short-channel effects in MFIS negative-capacitance FET including quantum confinement effects N Pandey, YS Chauhan IEEE Transactions on Electron Devices 67 (11), 4757-4764, 2020 | 25 | 2020 |
| Accurate analytical modeling of junctionless DG-MOSFET by green's function approach A Nandi, N Pandey Superlattices and Microstructures 111, 983-990, 2017 | 19 | 2017 |
| Analytical modeling of gate-stack DG-MOSFET in subthreshold regime by Green’s function approach A Nandi, N Pandey, S Dasgupta IEEE Transactions on Electron Devices 65 (10), 4724-4728, 2018 | 16 | 2018 |
| Impact of domain wall motion on the memory window in a multidomain ferroelectric FET N Pandey, YS Chauhan IEEE Electron Device Letters 43 (11), 1854-1857, 2022 | 12 | 2022 |
| Physics and modeling of multidomain FeFET with domain wall-induced negative capacitance N Pandey, YS Chauhan IEEE Transactions on Electron Devices 69 (8), 4659-4666, 2022 | 12 | 2022 |
| Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance N Pandey, G Pahwa, YS Chauhan Solid-State Electronics 186, 108189, 2021 | 8 | 2021 |
| Multidomain interactions in perpendicular magnetic tunnel junction (p-MTJ): Enabling multistate MRAM N Pandey, YS Chauhan IEEE Transactions on Electron Devices 70 (5), 2304-2311, 2023 | 5 | 2023 |
| Dynamics and modeling of multidomains in ferroelectric tunnel junction—Part I: Mathematical framework N Pandey, YS Chauhan IEEE Transactions on Electron Devices 69 (12), 7147-7155, 2022 | 5 | 2022 |
| Dynamics and modeling of multidomains in ferroelectric tunnel junction—Part-II: Electrostatics and transport N Pandey, YS Chauhan IEEE Transactions on Electron Devices 70 (1), 327-334, 2022 | 4 | 2022 |
| Variability analysis in a 3-D multigranular ferroelectric capacitor N Pandey, K Qureshi, YS Chauhan IEEE Transactions on Electron Devices 68 (8), 3780-3786, 2021 | 3 | 2021 |
| Modeling of Ferroelectric Memories and Transistors Including Multi-Domain Effects N Pandey Ph. D. dissertation, Dept. Elect. Eng., Indian Inst. Technol., Kanpur, India …, 2023 | 1 | 2023 |
| Multi-Domain Dynamics and Ultimate Scalability of CMOS-Compatible FeFETs N Pandey, YS Chauhan, LF Register, SK Banerjee IEEE Electron Device Letters, 2024 | | 2024 |
| Ferroelectric proximity effects in two-dimensional FeSeTe MN Disiena, N Pandey, C Luth, L Sloan, R Shattuck, JV Singh, ... Journal of Applied Physics 136 (3), 2024 | | 2024 |
| Impact of Multi-Domain Microscopic Interactions on Magnetic Tunnel Junction’s Static and Transient Characteristics N Pandey, YS Chauhan, LF Register, SK Banerjee 2024 Device Research Conference (DRC), 1-2, 2024 | | 2024 |
| Impact of Multi-Domain on Ferroelectric Tunnel Junction Design Metrics N Pandey, YS Chauhan, LF Register, SK Banerjee 2024 Device Research Conference (DRC), 1-2, 2024 | | 2024 |
| 2-D Analytical Modeling of the Magnetic Tunnel Junctions Including Multidomain Effects: Predictive Insights and Design Optimization N Pandey, YS Chauhan, LF Register, SK Banerjee IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Dynamics of Domains and its Impact on Gate Tunneling in CMOS-Compatible FeFETs N Pandey, YS Chauhan, LF Register, SK Banerjee IEEE Electron Device Letters, 2024 | | 2024 |
| Static Negative Susceptibility in Ferromagnetic Material Induced by Domain Wall: Possibility to Achieve Gigantic Diamagnetism N Pandey, YS Chauhan IEEE Transactions on Electron Devices, 2024 | | 2024 |
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT Kanpur在 iitk.ac.in 的电子邮件经过验证
