Phase transition in bulk single crystals and thin films of by nanoscale infrared spectroscopy and imaging M Liu, AJ Sternbach, M Wagner, TV Slusar, T Kong, SL Bud'ko, ... Physical Review B 91 (24), 245155, 2015 | 113 | 2015 |
Imaging the nanoscale phase separation in vanadium dioxide thin films at terahertz frequencies HT Stinson, A Sternbach, O Najera, R Jing, AS Mcleod, TV Slusar, ... Nature communications 9 (1), 3604, 2018 | 104 | 2018 |
Artifact free time resolved near-field spectroscopy AJ Sternbach, J Hinton, T Slusar, AS McLeod, MK Liu, A Frenzel, ... Optics Express 25 (23), 28589-28611, 2017 | 47 | 2017 |
Epitaxial growth of higher transition-temperature VO2 films on AlN/Si T Slusar, JC Cho, BJ Kim, SJ Yun, HT Kim APL Materials 4 (2), 2016 | 36 | 2016 |
Direct observation of the M2 phase with its Mott transition in a VO2 film H Kim, TV Slusar, D Wulferding, I Yang, JC Cho, M Lee, HC Choi, ... Applied Physics Letters 109 (23), 2016 | 33 | 2016 |
Mott Switching and Structural Transition in the Metal Phase of VO2 Nanodomain CY Kim, T Slusar, J Cho, HT Kim ACS Applied Electronic Materials 3 (2), 605-610, 2021 | 29 | 2021 |
Photoheat-induced Schottky nanojunction and indirect Mott transition in VO2: Photocurrent analysis HT Kim, M Kim, A Sohn, T Slusar, G Seo, H Cheong, DW Kim Journal of Physics: Condensed Matter 28 (8), 085602, 2016 | 26 | 2016 |
Highly repeatable nanoscale phase coexistence in vanadium dioxide films TJ Huffman, DJ Lahneman, SL Wang, T Slusar, BJ Kim, HT Kim, ... Physical Review B 97 (8), 085146, 2018 | 23 | 2018 |
Nanotextured Dynamics of a Light-Induced Phase Transition in VO2 AJ Sternbach, FL Ruta, Y Shi, T Slusar, J Schalch, G Duan, AS McLeod, ... Nano letters 21 (21), 9052-9060, 2021 | 18 | 2021 |
Mott transition in chain structure of strained VO2 films revealed by coherent phonons TV Slusar, JC Cho, HR Lee, JW Kim, SJ Yoo, JY Bigot, KJ Yee, HT Kim Scientific reports 7 (1), 16038, 2017 | 18 | 2017 |
Highly transparent ultrathin vanadium dioxide films with temperature-dependent infrared reflectance for smart windows KH Jung, SJ Yun, T Slusar, HT Kim, TM Roh Applied Surface Science 589, 152962, 2022 | 16 | 2022 |
Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer AV Sachenko, VP Kostylyov, VG Litovchenko, VG Popov, BM Romanyuk, ... Ukrainian journal of physics 58 (2), 142-142, 2013 | 7 | 2013 |
Insulator-to-metal transition in ultrathin rutile VO2/TiO2(001) DJ Lahneman, T Slusar, DB Beringer, H Jiang, CY Kim, HT Kim, ... npj Quantum Materials 7 (1), 72, 2022 | 5 | 2022 |
A near-field study of VO2/(100) TiO2 film and its crack-induced strain relief X Chen, S Kittiwatanakul, Y Cheng, TV Slusar, AS Mcleod, Z Li, HT Kim, ... Applied Physics Letters 121 (2), 2022 | 4 | 2022 |
Inhomogeneous Photosusceptibility of Films at the Nanoscale AJ Sternbach, T Slusar, FL Ruta, S Moore, X Chen, MK Liu, HT Kim, ... Physical Review Letters 132 (18), 186903, 2024 | 3 | 2024 |
Modeling of characteristics of highly efficient textured solar cells based on c-silicon. The influence of recombination in the space charge region AV Sachenko, VP Kostylyov, VM Vlasiuk, IO Sokolovskyi, MA Evstigneev, ... Semicond. Phys. Quant. Electron. Optoelectron 26 (005), 2023 | 3 | 2023 |
Influence of surface centers on the effective surface recombination rate and the parameters of silicon solar cells VP Kostylyov, AV Sachenko, IO Sokolovskyi, VV Chernenko, TV Slusar, ... arXiv preprint arXiv:1304.7680, 2013 | 3 | 2013 |
Features of solar cells and solar silicon wafers surface photovoltage spectral dependences in the short-wave absorption region VP Kostylyov, VG Litovchenko, AV Sachenko, TV Slusar, VV Chernenko Proceedings 28, 1715-1718, 0 | 3 | |
Artifact Free Transient Near-Field Nanoscopy A Sternbach, J Hinton, T Slusar, AS McLeod, M Liu, A Frenzel, M Wagner, ... arXiv preprint arXiv:1706.08478, 2017 | 2 | 2017 |
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells VP Kostylyov, AV Sachenko, OA Serba, TV Slusar, VM Vlasyuk, ... Semiconductor physics, quantum electronics & optoelectronics, 464-467, 2015 | 1 | 2015 |