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Keji Zhou
Keji Zhou
在 fudan.edu.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
Bit-interleaving-enabled 8T SRAM with shared data-aware write and reference-based sense amplifier
L Wen, X Cheng, K Zhou, S Tian, X Zeng
IEEE Transactions on Circuits and Systems II: Express Briefs 63 (7), 643-647, 2016
482016
Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing
G Wu, X Zhang, G Feng, J Wang, K Zhou, J Zeng, D Dong, F Zhu, C Yang, ...
Nature Materials 22 (12), 1499-1506, 2023
452023
Short-term synaptic plasticity in emerging devices for neuromorphic computing
C Li, X Zhang, P Chen, K Zhou, J Yu, G Wu, D Xiang, H Jiang, M Wang, ...
Iscience 26 (4), 2023
292023
High-density 3-D stackable crossbar 2D2R nvTCAM with low-power intelligent search for fast packet forwarding in 5G applications
K Zhou, X Xue, J Yang, X Xu, H Lv, M Jing, J Li, X Zeng, M Liu
IEEE Journal of Solid-State Circuits 56 (3), 988-1000, 2020
172020
Engineering spiking neurons using threshold switching devices for high-efficient neuromorphic computing
Y Ding, Y Zhang, X Zhang, P Chen, Z Zhang, Y Yang, L Cheng, C Mu, ...
Frontiers in neuroscience 15, 786694, 2022
152022
An energy efficient computing-in-memory accelerator with 1T2R cell and fully analog processing for edge AI applications
K Zhou, C Zhao, J Fang, J Jiang, D Chen, Y Huang, M Jing, J Han, H Tian, ...
IEEE Transactions on Circuits and Systems II: Express Briefs 68 (8), 2932-2936, 2021
132021
A 1T2R1C ReRAM CIM accelerator with energy-efficient voltage division and capacitive coupling for CNN acceleration in AI edge applications
D Chen, Z Guo, J Fang, C Zhao, J Jiang, K Zhou, H Tian, X Xiong, X Xue, ...
IEEE Transactions on Circuits and Systems II: Express Briefs 70 (1), 276-280, 2022
62022
The trend of emerging non-volatile TCAM for parallel search and AI applications
KJ Zhou, C Mu, B Wen, XM Zhang, GJ Wu, C Li, H Jiang, XY Xue, S Tang, ...
Chip 1 (2), 100012, 2022
62022
A bioinspired configurable cochlea based on memristors
L Cheng, L Gao, X Zhang, Z Wu, J Zhu, Z Yu, Y Yang, Y Ding, C Li, F Zhu, ...
Frontiers in Neuroscience 16, 982850, 2022
52022
Hardsea: Hybrid analog-reram clustering and digital-sram in-memory computing accelerator for dynamic sparse self-attention in transformer
S Liu, C Mu, H Jiang, Y Wang, J Zhang, F Lin, K Zhou, Q Liu, C Chen
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2023
32023
A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices
J Yang, R Lin, K Zhou, Y Zhang, X Xue, H Lv
Microelectronics Journal 128, 105550, 2022
32022
A 200M-Query-Vector/s Computing-in-RRAM ADC-less k-Nearest-Neighbor Accelerator with Time-Domain Winner-Takes-All Circuits
C Mu, Y Wang, J Zheng, S Liu, K Zhou, S Tang, C Chen, Q Liu
2022 IEEE 4th International Conference on Artificial Intelligence Circuits …, 2022
32022
Complementary memory cell based on field-programmable ferroelectric diode for ultra-low power current-SA free BNN applications
Q Luo, B Chen, R Cao, X Xue, K Zhou, J Yang, X Zheng, H Yu, J Yu, ...
2019 IEEE International Electron Devices Meeting (IEDM), 38.5. 1-38.5. 4, 2019
32019
High speed true random number generator with a new structure of coarse-tuning PDL in FPGA
H Fang, P Wang, X Cheng, K Zhou
Journal of Semiconductors 39 (3), 035001, 2018
32018
Design of replica bit line control circuit to optimize power for SRAM
P Wang, K Zhou, H Zhang, D Gong
Journal of Semiconductors 37 (12), 125002, 2016
32016
Multi-state nonvolatile capacitances in HfO2-based ferroelectric capacitor for neuromorphic computing
S Wu, X Zhang, R Cao, K Zhou, J Lu, C Li, Y Yang, D Shang, Y Wei, ...
Applied Physics Letters 124 (10), 2024
22024
A 28 nm 81 Kb 59–95.3 TOPS/W 4T2R ReRAM computing-in-memory accelerator with voltage-to-time-to-digital based output
K Zhou, X Jia, C Zhao, X Zhang, G Wu, C Mu, H Zhu, Y Ding, C Chen, ...
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 12 (4 …, 2022
22022
Compute-in-Memory for Numerical Computations
D Zhao, Y Wang, J Shao, Y Chen, Z Guo, C Pan, G Dong, M Zhou, F Wu, ...
Micromachines 13 (5), 731, 2022
22022
Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F2 and K-means Clustering for Power Reduction
K Zhou, X Xue, J Yang, X Xu, H Lv, M Wang, W Liu, X Zeng, SS Chung, ...
2018 IEEE Asian Solid-State Circuits Conference (A-SSCC), 135-138, 2018
22018
Replica bit-line control circuit
W Pengjun, Z Keji, H Zhang, G Daohui
US Patent 9,886,206, 2018
22018
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