Atomic structure of conducting nanofilaments in TiO2 resistive switching memory DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ... Nature nanotechnology 5 (2), 148-153, 2010 | 2351 | 2010 |
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook KM Kim, DS Jeong, CS Hwang Nanotechnology 22 (25), 254002, 2011 | 750 | 2011 |
Anode-interface localized filamentary mechanism in resistive switching of thin films KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang Applied physics letters 91 (1), 012907, 2007 | 511 | 2007 |
High dielectric constant TiO2 thin films on a Ru electrode grown at 250 C by atomic-layer deposition SK Kim, WD Kim, KM Kim, CS Hwang, J Jeong Applied physics letters 85 (18), 4112-4114, 2004 | 402 | 2004 |
Memristors for energy‐efficient new computing paradigms DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang Advanced Electronic Materials 2 (9), 1600090, 2016 | 365 | 2016 |
An artificial nociceptor based on a diffusive memristor JH Yoon, Z Wang, KM Kim, H Wu, V Ravichandran, Q Xia, CS Hwang, ... Nature communications 9 (1), 417, 2018 | 359 | 2018 |
Physical electro-thermal model of resistive switching in bi-layered resistance-change memory S Kim, SJ Kim, KM Kim, SR Lee, M Chang, E Cho, YB Kim, CJ Kim, ... Scientific reports 3, 1680, 2013 | 286 | 2013 |
Localized switching mechanism in resistive switching of atomic-layer-deposited TiO 2 thin films KM Kim, BJ Choi, CS Hwang Applied physics letters 90 (24), 242906-242906-3, 2007 | 269 | 2007 |
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure KM Kim, BJ Choi, MH Lee, GH Kim, SJ Song, JY Seok, JH Yoon, S Han, ... Nanotechnology 22 (25), 254010, 2011 | 225 | 2011 |
Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application KM Kim, J Zhang, C Graves, JJ Yang, BJ Choi, CS Hwang, Z Li, ... Nano letters 16 (11), 6724-6732, 2016 | 216 | 2016 |
Pt/Ta2O5/HfO2− x/Ti resistive switching memory competing with multilevel NAND flash JH Yoon, KM Kim, SJ Song, JY Seok, KJ Yoon, DE Kwon, TH Park, ... Advanced Materials 27 (25), 3811-3816, 2015 | 187 | 2015 |
Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory SR Lee, YB Kim, M Chang, KM Kim, CB Lee, JH Hur, GS Park, D Lee, ... 2012 Symposium on VLSI Technology (VLSIT), 71-72, 2012 | 183 | 2012 |
Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures KM Kim, GH Kim, SJ Song, JY Seok, MH Lee, JH Yoon, CS Hwang Nanotechnology 21 (30), 305203, 2010 | 178 | 2010 |
The conical shape filament growth model in unipolar resistance switching of TiO2 thin film KM Kim, CS Hwang Applied Physics Letters 94 (12), 122109, 2009 | 170 | 2009 |
A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays WY Park, GH Kim, JY Seok, KM Kim, SJ Song, MH Lee, CS Hwang Nanotechnology 21 (19), 195201, 2010 | 169 | 2010 |
Nociceptive Memristor Y Kim, YJ Kwon, DE Kwon, KJ Yoon, JH Yoon, S Yoo, HJ Kim, TH Park, ... Advanced Materials 30 (8), 1704320, 2018 | 158 | 2018 |
Study on the resistive switching time of thin films BJ Choi, S Choi, KM Kim, YC Shin, CS Hwang, SY Hwang, S Cho, S Park, ... Applied physics letters 89 (1), 012906, 2006 | 156 | 2006 |
Voltage divider effect for the improvement of variability and endurance of TaOx memristor KM Kim, JJ Yang, JP Strachan, EM Grafals, N Ge, ND Melendez, Z Li, ... Scientific reports 6, 20085, 2016 | 154 | 2016 |
Resistive Switching in Pt∕ Al2O3∕ TiO2∕ Ru Stacked Structures KM Kim, BJ Choi, BW Koo, S Choi, DS Jeong, CS Hwang Electrochemical and solid-state letters 9 (12), G343, 2006 | 153 | 2006 |
Trilayer tunnel selectors for memristor memory cells BJ Choi, J Zhang, K Norris, G Gibson, KM Kim, W Jackson, MXM Zhang, ... Advanced Materials 28 (2), 356-362, 2016 | 129 | 2016 |