关注
Hongming Guan
Hongming Guan
在 pku.edu.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
K-Λ crossover transition in the conduction band of monolayer MoS2 under hydrostatic pressure
L Fu, Y Wan, N Tang, Y Ding, J Gao, J Yu, H Guan, K Zhang, W Wang, ...
Science advances 3 (11), e1700162, 2017
752017
Inversion Symmetry Breaking Induced Valley Hall Effect in Multilayer WSe2
H Guan, N Tang, H Huang, X Zhang, M Su, X Liu, L Liao, W Ge, B Shen
ACS nano 13 (8), 9325-9331, 2019
232019
Photon wavelength dependent valley photocurrent in multilayer
H Guan, N Tang, X Xu, LL Shang, W Huang, L Fu, X Fang, J Yu, C Zhang, ...
Physical Review B 96 (24), 241304, 2017
222017
Effective manipulation of spin dynamics by polarization electric field in InGaN/GaN quantum wells at room temperature
X Liu, N Tang, S Zhang, X Zhang, H Guan, Y Zhang, X Qian, Y Ji, W Ge, ...
Advanced Science 7 (13), 1903400, 2020
92020
Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer
H Huang, H Guan, M Su, X Zhang, Y Liu, C Liu, Z Zhang, K Liu, L Liao, ...
Nano Research 14, 1814-1818, 2021
82021
Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors
X Liu, N Tang, C Fang, C Wan, S Zhang, X Zhang, H Guan, Y Zhang, ...
RSC advances 10 (21), 12547-12553, 2020
62020
Magneto-transport Spectroscopy of the First and Second Two-dimensional Subbands in Al0.25Ga0.75N/GaN Quantum Point Contacts
F Lu, N Tang, L Shang, H Guan, F Xu, W Ge, B Shen
Scientific Reports 7 (1), 42974, 2017
42017
Excitonic effects on electron spin orientation and relaxation in wurtzite GaN
S Zhang, N Tang, X Zhang, X Liu, H Guan, Y Zhang, X Qian, Y Ji, W Ge, ...
Physical Review B 104 (12), 125202, 2021
22021
Interfacial symmetry breaking induced spin-orbit coupling in wurtzite GaN nanowires
X Liu, H Guan, N Tang, Y Lv, L Chen, X Zhang, S Zhang, Y Zhang, ...
Applied Physics Letters 118 (12), 2021
22021
Observation of direct hole Rashba spin-orbit coupling in -type GaAsSb nanowires
Z Sun, S Chen, N Tang, D Pan, H Guan, X Zhang, S Zhang, J Zhao, ...
Physical Review B 108 (8), L081302, 2023
2023
Research on the valley-related properties based on multilayer transition metal dichalcogenides
H Guan, N Tang, X Zhang, X Liu, W Ge, B Shen
Bulletin of the American Physical Society 65, 2020
2020
Direct-Indirect Bandgap Transition in Monolayer MoS2 under Hydrostatic Pressure
L Fu, Y Wan, N Tang, Y Ding, J Gao, J Yu, H Guan, K Zhang, W Wang, ...
APS March Meeting Abstracts 2018, T60. 061, 2018
2018
系统目前无法执行此操作,请稍后再试。
文章 1–12